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Class Information
Number: 117/81
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from liquid or supercritical state > Havin growth from molten state (e.g., solution melt) > Growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method)
Description: Subject matter in which a solid member, other than the seed or product, confines growth in at least one direction and at least partially defines the shape of the product; for example, a crucible* or a mold.










Sub-classes under this class:

Class Number Class Name Patents
117/83 Having bottom-up crystallization (e.g., vfg, vgf) 236
117/82 Including vertical precursor-product interface (e.g., horizontal bridgman) 123


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8663388 Method of manufacturing single crystal wire and other single crystal metallic articles Mar. 4, 2014
8657955 Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal Feb. 25, 2014
8647433 Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same Feb. 11, 2014
8628614 Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics Jan. 14, 2014
8591648 Crystal growing system having multiple rotatable crucibles and using a temperature gradient method Nov. 26, 2013
8580036 Method and apparatus for refining a molten material Nov. 12, 2013
8562740 Apparatus for directional solidification of silicon including a refractory material Oct. 22, 2013
8535440 Method of promoting single crystal growth during melt growth of semiconductors Sep. 17, 2013
8529696 Method for producing hexagonal boron nitride single crystals Sep. 10, 2013
8518287 Dichalcogenide thermoelectric material Aug. 27, 2013
8512470 System and methods for growing high-resistance single crystals Aug. 20, 2013
8506705 Method for manufacturing nitride single crystal Aug. 13, 2013
8506706 Systems, methods and substrates of monocrystalline germanium crystal growth Aug. 13, 2013
8506707 Substrate surface modifications for compositional gradation of crystalline materials and associated products Aug. 13, 2013
8500905 Kyropoulos sapphire single crystal growing apparatus using elliptic crucible Aug. 6, 2013
8486190 Process for producing single crystal Jul. 16, 2013
8480996 High-purity tellurium dioxide single crystal and manufacturing method thereof Jul. 9, 2013
8475593 Crystal preparing device, crystal preparing method, and crystal Jul. 2, 2013
8449672 Method of growing group III nitride crystals May. 28, 2013
8404043 Process for producing polycrystalline bulk semiconductor Mar. 26, 2013
8394195 Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals Mar. 12, 2013
8329295 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient Dec. 11, 2012
8323406 Defect reduction in seeded aluminum nitride crystal growth Dec. 4, 2012
8317920 Directional solidification furnace for reducing melt contamination and reducing wafer contamination Nov. 27, 2012
8313720 Guided diameter SiC sublimation growth with multi-layer growth guide Nov. 20, 2012
8303924 Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate Nov. 6, 2012
8303710 High pressure apparatus and method for nitride crystal growth Nov. 6, 2012
8293010 Templated growth of porous or non-porous castings Oct. 23, 2012
8268074 Method and device for producing oriented solidified blocks made of semi-conductor material Sep. 18, 2012
8242420 Directional solidification of silicon by electric induction susceptor heating in a controlled environment Aug. 14, 2012
8231729 Apparatus for producing nitride single crystal Jul. 31, 2012
8231727 Crystal growth apparatus and method Jul. 31, 2012
8210906 Slicing method and method for manufacturing epitaxial wafer Jul. 3, 2012
8157914 Substrate surface modifications for compositional gradation of crystalline materials and associated products Apr. 17, 2012
8133319 Production process of periodic table group 13 metal nitride crystal and production method of semiconductor device using the same Mar. 13, 2012
8123857 Method for producing p-type SiC semiconductor single crystal Feb. 28, 2012
8119024 Piezoelectric single crystal ingot, producing method therefor and piezoelectric single crystal device Feb. 21, 2012
8118933 Method of manufacturing a silicon carbide single crystal Feb. 21, 2012
8101020 Crystal growth apparatus and manufacturing method of group III nitride crystal Jan. 24, 2012
8088220 Deep-eutectic melt growth of nitride crystals Jan. 3, 2012
8062419 Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals Nov. 22, 2011
8021482 Method for eliminating the precipitates in a II-IV semiconductor material by annealing Sep. 20, 2011
7998272 Method of fabricating multi-freestanding GaN wafer Aug. 16, 2011
7972527 Method of making ternary piezoelectric crystals Jul. 5, 2011
7972439 Method of growing single crystals from melt Jul. 5, 2011
RE42279 Method of preparing a compound semiconductor crystal Apr. 12, 2011
7918936 System and method for crystal growing Apr. 5, 2011
7905958 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device Mar. 15, 2011
7902453 Edge illumination photovoltaic devices and methods of making same Mar. 8, 2011
7837969 Method of making large-volume CaF.sub.2 single crystals for optical elements with an optic axis parallel to the (100)-or (110)-crystal axis and CaF.sub.2 single crystal made thereby Nov. 23, 2010

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