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Class Information
Number: 117/77
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from liquid or supercritical state > Havin growth from molten state (e.g., solution melt) > Gas or vapor state precursor or overpressure
Description: Subject matter in which an overpressure of a precursor* is used or a precursor* of the single-crystal* product is delivered during the process to the molten precursor* in the gas or vapor state.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8679248 GaN whiskers and methods of growing them from solution Mar. 25, 2014
8574361 Group-III element nitride crystal producing method and group-III element nitride crystal Nov. 5, 2013
8568532 Method for growing single crystal of group III metal nitride and reaction vessel for use in same Oct. 29, 2013
8512470 System and methods for growing high-resistance single crystals Aug. 20, 2013
8486190 Process for producing single crystal Jul. 16, 2013
8449672 Method of growing group III nitride crystals May. 28, 2013
8398767 Bulk mono-crystalline gallium-containing nitride and its application Mar. 19, 2013
8337617 Manufacturing method and manufacturing apparatus of a group III nitride crystal Dec. 25, 2012
8323405 Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer Dec. 4, 2012
8123856 Method and apparatus for producing group III nitride based compound semiconductor Feb. 28, 2012
8088220 Deep-eutectic melt growth of nitride crystals Jan. 3, 2012
8021481 Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride Sep. 20, 2011
7955582 Method for producing crystallized silicon as well as crystallized silicon Jun. 7, 2011
RE42279 Method of preparing a compound semiconductor crystal Apr. 12, 2011
7883645 Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements Feb. 8, 2011
7871590 Mass of silicon solidified from molten state and process for producing the same Jan. 18, 2011
7811380 Process for obtaining bulk mono-crystalline gallium-containing nitride Oct. 12, 2010
7794539 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby Sep. 14, 2010
7713352 Synthesis of fibers of inorganic materials using low-melting metals May. 11, 2010
7670430 Method of recovering sodium metal from flux Mar. 2, 2010
7615203 Single crystal diamond Nov. 10, 2009
7531038 Crystal growth method May. 12, 2009
RE40662 Method of preparing a compound semiconductor crystal Mar. 17, 2009
7422633 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate Sep. 9, 2008
7418835 Low loss chalcogenide glass and process for making same using arsenic monochalcogenide Sep. 2, 2008
7387677 Substrate for epitaxy and method of preparing the same Jun. 17, 2008
7381268 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride Jun. 3, 2008
7306673 Furnace purification and metal fluoride crystal grown in a purified furnace Dec. 11, 2007
7294198 Process for producing single-crystal gallium nitride Nov. 13, 2007
7267721 Method for preparing group IV nanocrystals with chemically accessible surfaces Sep. 11, 2007
7252712 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride Aug. 7, 2007
7220311 Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride May. 22, 2007
7160388 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride Jan. 9, 2007
7125801 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same Oct. 24, 2006
7118625 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal Oct. 10, 2006
7087112 Nitride ceramics to mount aluminum nitride seed for sublimation growth Aug. 8, 2006
6592663 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate Jul. 15, 2003
6495189 Process for producing fat composition Dec. 17, 2002
6488769 Fluoride refining method and fluoride crystal manufacturing method, and optical part and aligner using same Dec. 3, 2002
6488770 Monocrystalline powder and monograin membrane production Dec. 3, 2002
6485563 Method of preparing a compound semiconductor crystal Nov. 26, 2002
6391108 Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus May. 21, 2002
6273948 Method of fabrication of highly resistive GaN bulk crystals Aug. 14, 2001
6273947 Method of preparing a compound semiconductor crystal Aug. 14, 2001
6270569 Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method Aug. 7, 2001
6238479 Raw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part May. 29, 2001
6123764 Manufacturing method for calcium fluoride crystal and processing method for calcium fluoride powder Sep. 26, 2000
5900060 Pressurized skull crucible apparatus for crystal growth and related system and methods May. 4, 1999
5863326 Pressurized skull crucible for crystal growth using the Czochralski technique Jan. 26, 1999
5656079 Statement of government interest Aug. 12, 1997

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