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Class Information
Number: 117/73
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from liquid or supercritical state > Havin growth from molten state (e.g., solution melt)
Description: Subject matter in which the liquid precursor* is a solid at room temperature, whether it is a solution or otherwise.










Sub-classes under this class:

Class Number Class Name Patents
117/75 Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., vls method) 94
117/77 Gas or vapor state precursor or overpressure 68
117/81 Growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method) 239
117/74 Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) 76
117/78 Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) 77
117/76 Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant) 44


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8702864 Method for growing silicon carbide single crystal Apr. 22, 2014
8685163 Method for growing silicon carbide single crystal Apr. 1, 2014
8679248 GaN whiskers and methods of growing them from solution Mar. 25, 2014
8663388 Method of manufacturing single crystal wire and other single crystal metallic articles Mar. 4, 2014
8647432 Method of making large surface area filaments for the production of polysilicon in a CVD reactor Feb. 11, 2014
8632632 Apparatus and method for crystallization of silicon Jan. 21, 2014
8628613 Method for producing semiconductor wafers composed of silicon with reduced pinholes Jan. 14, 2014
8617447 Methods of making an unsupported article of pure or doped semiconducting material Dec. 31, 2013
8603242 Floating semiconductor foils Dec. 10, 2013
8591795 Method of exocasting an article of semiconducting material Nov. 26, 2013
8580033 Method for producing a single crystal of semiconductor material Nov. 12, 2013
8574361 Group-III element nitride crystal producing method and group-III element nitride crystal Nov. 5, 2013
8574362 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot Nov. 5, 2013
8562740 Apparatus for directional solidification of silicon including a refractory material Oct. 22, 2013
8529696 Method for producing hexagonal boron nitride single crystals Sep. 10, 2013
8518287 Dichalcogenide thermoelectric material Aug. 27, 2013
8512470 System and methods for growing high-resistance single crystals Aug. 20, 2013
8506705 Method for manufacturing nitride single crystal Aug. 13, 2013
8500905 Kyropoulos sapphire single crystal growing apparatus using elliptic crucible Aug. 6, 2013
8501139 Floating Si and/or Ge foils Aug. 6, 2013
8501141 Method for producing group III nitride semiconductor Aug. 6, 2013
8491718 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon Jul. 23, 2013
8475589 Method for evaluating metal contamination of silicon single crystal Jul. 2, 2013
8475592 Method for producing a single crystal of semiconductor material Jul. 2, 2013
8460462 Method and an apparatus for growing a silicon single crystal from a melt Jun. 11, 2013
8454747 Method for producing single-crystal thin film Jun. 4, 2013
8449672 Method of growing group III nitride crystals May. 28, 2013
8449674 System and method for liquid silicon containment May. 28, 2013
8430056 Apparatus for making epitaxial film Apr. 30, 2013
8409348 Production method of zinc oxide single crystal Apr. 2, 2013
8398767 Bulk mono-crystalline gallium-containing nitride and its application Mar. 19, 2013
8388752 Method of manufacturing a silicon carbide single crystal Mar. 5, 2013
8377203 Oxide single crystal and method for production thereof, and single crystal wafer Feb. 19, 2013
8343239 Group III nitride semiconductor manufacturing system Jan. 1, 2013
8337617 Manufacturing method and manufacturing apparatus of a group III nitride crystal Dec. 25, 2012
8328937 Seed crystal axis for solution growth of single crystal Dec. 11, 2012
8323405 Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer Dec. 4, 2012
8303710 High pressure apparatus and method for nitride crystal growth Nov. 6, 2012
8287644 Method for growing silicon carbide single crystal Oct. 16, 2012
8273176 Method for processing silicon powder to obtain silicon crystals Sep. 25, 2012
8268074 Method and device for producing oriented solidified blocks made of semi-conductor material Sep. 18, 2012
8231726 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate Jul. 31, 2012
8231727 Crystal growth apparatus and method Jul. 31, 2012
8210906 Slicing method and method for manufacturing epitaxial wafer Jul. 3, 2012
8197595 Method and device for producing thin silicon rods Jun. 12, 2012
8187563 Method for producing Si bulk polycrystal ingot May. 29, 2012
8172942 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal May. 8, 2012
8163083 Silica glass crucible and method for pulling up silicon single crystal using the same Apr. 24, 2012
8123856 Method and apparatus for producing group III nitride based compound semiconductor Feb. 28, 2012
8101019 Method for producing a monocrystalline or polycrystalline semiconductor material Jan. 24, 2012

1 2 3 4










 
 
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