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Class Information
Number: 117/6
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from solid or gel state (e.g., solid phase recrystallization) > At pressure above 1 atmosphere
Description: Subject matter in which the process includes use of pressure greater than 1 atmosphere during the growth step.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7374613 |
Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparatio |
May. 20, 2008 |
| 7318866 |
Systems and methods for inducing crystallization of thin films using multiple optical paths |
Jan. 15, 2008 |
| 7316746 |
Crystals for a semiconductor radiation detector and method for making the crystals |
Jan. 8, 2008 |
| 7303626 |
Three-dimensional periodic structure and method for producing the same |
Dec. 4, 2007 |
| 7273525 |
Methods for forming phosphorus- and/or boron-containing silica layers on substrates |
Sep. 25, 2007 |
| RE39778 |
Method of preparing group III-V compound semiconductor crystal |
Aug. 21, 2007 |
| 7186570 |
Method of manufacturing ceramic film, method of manufacturing ferroelectric capacitor, ceramic film, ferroelectric capacitor, and semiconductor device |
Mar. 6, 2007 |
| 6773503 |
Method of heat-treating fluoride crystal, method of producing optical part, and optical apparatus |
Aug. 10, 2004 |
| 6743294 |
Continuous crystal plate growth process and apparatus |
Jun. 1, 2004 |
| 6592798 |
Method for preparing eutectic ceramics |
Jul. 15, 2003 |
| 6294016 |
Method for manufacturing p-type GaN based thin film using nitridation |
Sep. 25, 2001 |
| 6143366 |
High-pressure process for crystallization of ceramic films at low temperatures |
Nov. 7, 2000 |
| 6056817 |
Process for producing semi-insulating InP single crystal and semi-insulating InP single crystal substrate |
May. 2, 2000 |
| 6007622 |
Method of preparing group III-V compound semiconductor crystal |
Dec. 28, 1999 |
| 5916363 |
Oriented molybdenum or tungsten single crystal and manufacturing method thereof |
Jun. 29, 1999 |
| 5914068 |
Bi-layer oxide ferroelectrics |
Jun. 22, 1999 |
| 5904766 |
Process for preparing bismuth compounds |
May. 18, 1999 |
| 5756061 |
Diamond synthesis from silicon carbide |
May. 26, 1998 |
| 5256242 |
Method of manufacturing ferrite crystals |
Oct. 26, 1993 |
| 5139611 |
Colloidal spheres in suspension |
Aug. 18, 1992 |
| 5093095 |
Crystallization in a force field |
Mar. 3, 1992 |
| 5034206 |
Aluminum borate fibers |
Jul. 23, 1991 |
| 4584053 |
Process for preparing ZnSe single crystal |
Apr. 22, 1986 |
| 4444615 |
Method for producing a single crystal |
Apr. 24, 1984 |
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