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Class Information
Number: 117/56
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from liquid or supercritical state > Liquid phase epitaxial growth (lpe) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
Description: Subject matter in which a growth-influencing parameter, such as temperature, precursor* composition, precursor* concentration, or precursor* flow rate, is varied during growth and as a result the growth is altered, usually so that distinct layers of single-crystal* are formed or so that a single-crystal* of varying internal composition is formed (e.g., superlattice).










Sub-classes under this class:

Class Number Class Name Patents
117/57 Including a sliding boat system 67


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8668774 Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals Mar. 11, 2014
8574362 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot Nov. 5, 2013
8323404 Group III nitride crystal and manufacturing method thereof Dec. 4, 2012
8246745 Method and device for producing metal foils Aug. 21, 2012
8210906 Slicing method and method for manufacturing epitaxial wafer Jul. 3, 2012
8201947 Wavelength converter and green light source and projection apparatus using the same Jun. 19, 2012
8052793 Method for producing silicon carbide single crystal Nov. 8, 2011
8002893 Apparatus for pulling single crystal by CZ method Aug. 23, 2011
7875115 Epitaxial wafer and method for producing epitaxial wafers Jan. 25, 2011
7704318 Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate Apr. 27, 2010
7605062 Doped nanoparticle-based semiconductor junction Oct. 20, 2009
7517406 Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same Apr. 14, 2009
7494903 Doped nanoparticle semiconductor charge transport layer Feb. 24, 2009
7375011 Ex-situ doped semiconductor transport layer May. 20, 2008
7351283 System and method for fabricating a crystalline thin structure Apr. 1, 2008
7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device Nov. 13, 2007
7077901 Process for producing single crystal silicon wafers Jul. 18, 2006
7048797 Liquid-phase growth process and liquid-phase growth apparatus May. 23, 2006
6951585 Liquid-phase growth method and liquid-phase growth apparatus Oct. 4, 2005
6902619 Liquid phase epitaxy Jun. 7, 2005
6875270 Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same Apr. 5, 2005
6542299 Material for bismuth substituted garnet thick film and a manufacturing method thereof Apr. 1, 2003
6440212 Low cost method for making thermoelectric coolers Aug. 27, 2002
6059878 Method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film May. 9, 2000
5985023 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer Nov. 16, 1999
5817530 Use of conductive lines on the back side of wafers and dice for semiconductor interconnects Oct. 6, 1998
5725658 Heat-treatment method of groups III-V compound semiconductor materials Mar. 10, 1998
5707891 Method of manufacturing a light emitting diode Jan. 13, 1998
5654229 Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films Aug. 5, 1997
5652178 Method of manufacturing a light emitting diode using LPE at different temperatures Jul. 29, 1997
5650006 Process for producing a lithium niobate-lithium tantalate single crystal substrate Jul. 22, 1997
5643827 GaP light emitting substrate and a method of manufacturing it Jul. 1, 1997
5603761 Liquid phase epitaxial growth method for carrying out the same Feb. 18, 1997
5571321 Method for producing a gallium phosphide epitaxial wafer Nov. 5, 1996
5529938 Method for producing light-emitting diode Jun. 25, 1996
5518934 Method of fabricating multiwavelength infrared focal plane array detector May. 21, 1996
5513593 Liquid-phase heteroepitaxy method May. 7, 1996
5512511 Process for growing HgCdTe base and contact layer in one operation Apr. 30, 1996
5503103 Method and apparatus for producing crystalline layers Apr. 2, 1996
5434101 Process for producing thin film by epitaxial growth Jul. 18, 1995
5407858 Method of making gap red light emitting element substrate by LPE Apr. 18, 1995
5397736 Liquid epitaxial process for producing three-dimensional semiconductor structures Mar. 14, 1995
5356509 Hetero-epitaxial growth of non-lattice matched semiconductors Oct. 18, 1994
5332451 Epitaxially grown compound-semiconductor crystal Jul. 26, 1994
5326716 Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy Jul. 5, 1994
5306386 Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates Apr. 26, 1994
5209917 Lithium niobate single crystal thin film and production method thereof May. 11, 1993
5185288 Epitaxial growth method Feb. 9, 1993
5141894 Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters Aug. 25, 1992
5139998 Controlled thallous oxide evaporation for thallium superconductor films and reactor design Aug. 18, 1992

1 2 3










 
 
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