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Class Information
Number: 117/54
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from liquid or supercritical state > Liquid phase epitaxial growth (lpe)
Description: Subject matter characterized by single-crystal* growth onto a seed* where the product has a definite crystallographic relationship to the seed*, where its thickness is not greater than the same order of magnitude than its width and/or length, and where the substrate* remains as a significant or integral part of the product in use (i.e., epitaxy*).


Sub-classes under this class:

Class Number Class Name Patents
117/63 Characterized by specified crystallography of the substrate 39
117/62 Electric current controlled or induced growth 13
117/61 Including a sliding boat system 77
117/59 Including a tipping system (e.g., rotation, pivoting) 25
117/60 Including a vertical dipping system 59
117/56 Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) 104
117/64 Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) 44
117/55 With a step of measuring, testing, or sensing 22
117/58 With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking) 52


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7422632 Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate Sep. 9, 2008
7351283 System and method for fabricating a crystalline thin structure Apr. 1, 2008
7326293 Patterned atomic layer epitaxy Feb. 5, 2008
7297209 Method and device for transferring anisotropic crystal film from donor to receptor, and the donor Nov. 20, 2007
7282190 Silicon layer production method and solar cell production method Oct. 16, 2007
7221037 Method of manufacturing group III nitride substrate and semiconductor device May. 22, 2007
7179330 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer Feb. 20, 2007
7118625 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal Oct. 10, 2006
7077901 Process for producing single crystal silicon wafers Jul. 18, 2006
7048797 Liquid-phase growth process and liquid-phase growth apparatus May. 23, 2006
7022181 Liquid phase growth process, liquid phase growth system and substrate member production method Apr. 4, 2006
7014711 Liquid-phase growth apparatus and method Mar. 21, 2006
6960255 Framework assisted crystal growth Nov. 1, 2005
6953506 Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same Oct. 11, 2005
6951585 Liquid-phase growth method and liquid-phase growth apparatus Oct. 4, 2005
6951584 Apparatus for producing semiconductor thin films on moving substrates Oct. 4, 2005
6902619 Liquid phase epitaxy Jun. 7, 2005
6875270 Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same Apr. 5, 2005
6872248 Liquid-phase growth process and liquid-phase growth apparatus Mar. 29, 2005
6824609 Liquid phase growth method and liquid phase growth apparatus Nov. 30, 2004
6802900 Liquid phase growth methods and liquid phase growth apparatus Oct. 12, 2004
6733587 Process for fabricating an article comprising a magneto-optic garnet material May. 11, 2004
6677222 Method of manufacturing semiconductor device with polysilicon film Jan. 13, 2004
6602344 Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device Aug. 5, 2003
6551908 Method for producing semiconductor thin films on moving substrates Apr. 22, 2003
6542299 Material for bismuth substituted garnet thick film and a manufacturing method thereof Apr. 1, 2003
6527853 Method for producing nitride monocrystals Mar. 4, 2003
6440765 Method for fabricating an infrared-emitting light-emitting diode Aug. 27, 2002
6440212 Low cost method for making thermoelectric coolers Aug. 27, 2002
6402836 Method for epitaxial growth on a substrate Jun. 11, 2002
6383286 Method of making semiconductor super-atom and aggregate thereof May. 7, 2002
6325848 Method of making a silicon substrate with controlled impurity concentration Dec. 4, 2001
6273946 Method for production of multi-layered epitaxially grown crystal and apparatus therefor Aug. 14, 2001
6197110 Mass production of silicon dioxide film by liquid phase deposition method Mar. 6, 2001
6126743 Process for producing dielectrics and fine single crystal powders and thin film capacitor Oct. 3, 2000
6106613 Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate Aug. 22, 2000
6074476 Non-contact processing of crystal materials Jun. 13, 2000
6059878 Method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film May. 9, 2000
6051062 Optical single crystal film, process for producing the same and optical element comprising the same Apr. 18, 2000
6036770 Method of fabricating a laterally continuously graded mercury cadmium telluride layer Mar. 14, 2000
6030449 Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof Feb. 29, 2000
5985023 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer Nov. 16, 1999
5951754 Method of fabricating semiconductor quantum box Sep. 14, 1999
5922126 Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder Jul. 13, 1999
5871580 Method of growing a bulk crystal Feb. 16, 1999
5871579 Two-step dipping technique for the preparation of organic-inorganic perovskite thin films Feb. 16, 1999
5766342 Method for forming silicon film and silicon film forming apparatus Jun. 16, 1998
5759708 Process for depositing thin film layers onto surfaces modified with organic functional groups and products formed thereby Jun. 2, 1998
5725658 Heat-treatment method of groups III-V compound semiconductor materials Mar. 10, 1998
5702822 Method for producing single crystal, and needle-like single crystal Dec. 30, 1997

1 2 3


 
 
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