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Class Information
Number: 117/46
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from liquid or supercritical state > Having moving solid-liquid-solid region > Movement includes a horizontal component
Description: Subject matter in which the solid-liquid-solid region is caused to move in a direction which includes a horizontal component.










Patents under this class:

Patent Number Title Of Patent Date Issued
8545624 Method for continuous formation of a purified sheet from a melt Oct. 1, 2013
7828895 Method of producing optical element Nov. 9, 2010
7645337 Systems and methods for creating crystallographic-orientation controlled poly-silicon films Jan. 12, 2010
7384476 Method for crystallizing silicon Jun. 10, 2008
7300858 Laser crystallization and selective patterning using multiple beamlets Nov. 27, 2007
7153359 Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof Dec. 26, 2006
7135070 Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making Nov. 14, 2006
7128783 Thin-film crystal-structure-processed mechanical devices, and methods and systems for making Oct. 31, 2006
7125451 Crystal-structure-processed mechanical devices and methods and systems for making Oct. 24, 2006
6932865 System and method of making single-crystal structures through free-form fabrication techniques Aug. 23, 2005
6921434 Regulated growth method for laser irradiating silicon films Jul. 26, 2005
6840999 In situ regrowth and purification of crystalline thin films Jan. 11, 2005
6660085 Polycrystal thin film forming method and forming system Dec. 9, 2003
6645454 System and method for regulating lateral growth in laser irradiated silicon films Nov. 11, 2003
6635555 Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films Oct. 21, 2003
6210478 Refining and analysis of material using horizontal cold-crucible induction levitation melting Apr. 3, 2001
6113689 Method of crystallizing amorphous silicon layer Sep. 5, 2000
5741359 Method and apparatus for zone-melting recrystallization of semiconductor layer Apr. 21, 1998
5490477 Process for the production of semiconductor foils and their use Feb. 13, 1996
5296089 Enhanced radiative zone-melting recrystallization method and apparatus Mar. 22, 1994
5248377 Crystal-growth furnace for interface curvature control Sep. 28, 1993
5178840 Single wafer regrowth of silicon Jan. 12, 1993
5133829 Single wafer regrowth of silicon Jul. 28, 1992
5074952 Zone-melt recrystallization method and apparatus Dec. 24, 1991
5007979 Method of fabricating GaAs single crystal Apr. 16, 1991
4907177 Computerized multi-zone crystal growth furnace precise temperature and heating control method Mar. 6, 1990
4749438 Method and apparatus for zone recrystallization Jun. 7, 1988
4690797 Method for the manufacture of large area silicon crystal bodies for solar cells Sep. 1, 1987
4643797 Method for the manufacture of large area silicon crystal bodies for solar cells Feb. 17, 1987
4483736 Method for producing a single crystal of a III.sub.b -V.sub.b compound Nov. 20, 1984
4382186 Process and apparatus for converged fine line electron beam treatment of objects May. 3, 1983
4350561 Single crystal processes and products Sep. 21, 1982
4285760 Zone purification of cylindrical ingots Aug. 25, 1981
4273608 Method of forming a sheet of single crystal semiconductor material Jun. 16, 1981
4250148 Apparatus and method for producing polycrystalline ribbon Feb. 10, 1981
4102767 Arc heater method for the production of single crystal silicon Jul. 25, 1978
3984280 Making rod-shaped single crystals by horizontal solidifaction from a melt using transversally asymmetric trough-shaped resistance heater having transverse half turns Oct. 5, 1976











 
 
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