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Class Information
Number: 117/224
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Apparatus > For crystallization from liquid or supercritical state > Including pressurized crystallization means (e.g., hydrothermal)
Description: Subject matter including means for providing or containing pressure greater than one atmosphere in the crystallization chamber during growth.


Patents under this class:

Patent Number Title Of Patent Date Issued
7396411 Apparatus for manufacturing single crystal Jul. 8, 2008
7381268 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride Jun. 3, 2008
7368015 Apparatus for producing single crystal and quasi-single crystal, and associated method May. 6, 2008
7220311 Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride May. 22, 2007
6866714 Large size semiconductor crystal with low dislocation density Mar. 15, 2005
6852163 Extra high voltage generator Feb. 8, 2005
6780244 Method for producing a semiconductor crystal Aug. 24, 2004
6592663 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate Jul. 15, 2003
6572700 Semiconductor crystal, and method and apparatus of production thereof Jun. 3, 2003
6562134 Crystal growing device and method of manufacturing single crystal May. 13, 2003
6254677 Semiconductor crystal, and method and apparatus of production thereof Jul. 3, 2001
6090202 Method and apparatus for growing crystals Jul. 18, 2000
5849080 Apparatus for producing polycrystalline semiconductors Dec. 15, 1998
5769943 Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques Jun. 23, 1998
5533465 Hydrothermal crystallization vessels Jul. 9, 1996
5456204 Filtering flow guide for hydrothermal crystal growth Oct. 10, 1995
5423287 Crystal growing cell Jun. 13, 1995
5375557 High pressure liquid phase epitaxy reactor chamber with direct see through capability Dec. 27, 1994
5375556 Hydrothermal process for growing large crystals or crystal layers Dec. 27, 1994
5362455 Draft tube, direct contact cryogenic crystallizer Nov. 8, 1994
5122224 Direct flow crystal growth system Jun. 16, 1992
5098673 Apparatus for growing homogeneous crystals Mar. 24, 1992
5082635 High-pressure crystallographic observation apparatus Jan. 21, 1992
5057286 Vessel for use in hydrothermal synthesis Oct. 15, 1991
4956047 Process of making high quality single quartz crystal using silica glass nutrient Sep. 11, 1990
4883648 Cubic boron nitride manufacture Nov. 28, 1989
H580 Method and apparatus for growing high perfection quartz Feb. 7, 1989
H560 Method of manufacturing dislocation and etch channel free quartz resonator blanks Dec. 6, 1988
4784717 Method of manufacturing BaPb.sub.1 Nov. 15, 1988
4762588 Method of manufacturing calcium carbonate single crystal Aug. 9, 1988
4738831 Method and apparatus for growing crystals Apr. 19, 1988
4699687 Method of synthesizing cubic system boron nitride Oct. 13, 1987
4559208 Hydrothermal crystal growing apparatus Dec. 17, 1985
4481069 Hydrothermal crystal growing process Nov. 6, 1984
4430051 Reaction vessel Feb. 7, 1984
4382840 Hydrothermal crystal growing process and apparatus May. 10, 1983
4042673 Novel diamond products and the manufacture thereof Aug. 16, 1977
4034066 Method and high pressure reaction vessel for quality control of diamond growth on diamond seed Jul. 5, 1977
4030966 Method of hydrothermally growing quartz Jun. 21, 1977
3976535 Screening seeds for quartz growth Aug. 24, 1976
3960501 Apparatus for growing crystals from hydrothermal solutions Jun. 1, 1976



 
 
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