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Class Information
Number: 117/220
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Apparatus > For crystallization from liquid or supercritical state > Having means for producing a moving solid-liquid-solid zone > Includin a solid member other than seed or product contacting the liquid (e.g., crucible, immersed heating element)
Description: Subject matter in which a solid member, other than the seed or single-crystal* product, contacts the crystallizing liquid.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7625446 |
High temperature high pressure capsule for processing materials in supercritical fluids |
Dec. 1, 2009 |
| 7399360 |
Crucible and method of growing single crystal by using crucible |
Jul. 15, 2008 |
| 7344595 |
Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby |
Mar. 18, 2008 |
| 7211146 |
Powder metallurgy crucible for aluminum nitride crystal growth |
May. 1, 2007 |
| 7118789 |
Silica glass crucible |
Oct. 10, 2006 |
| 6984263 |
Shallow melt apparatus for semicontinuous czochralski crystal growth |
Jan. 10, 2006 |
| 6719843 |
Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
Apr. 13, 2004 |
| 6562133 |
Crucible for growing macrocrystals |
May. 13, 2003 |
| 6451711 |
Epitaxial wafer apparatus |
Sep. 17, 2002 |
| 6423136 |
Crucible for growing macrocrystals |
Jul. 23, 2002 |
| 6364947 |
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
Apr. 2, 2002 |
| 6200385 |
Crucible for growing macrocrystals |
Mar. 13, 2001 |
| 6153011 |
Continuous crystal plate growth process and apparatus |
Nov. 28, 2000 |
| 5993545 |
Crucible for growing single crystals, process for making the same and use of the same |
Nov. 30, 1999 |
| 5427057 |
Self-clamping holder for polysilicon rod used in floating-zone single-crystal growth method |
Jun. 27, 1995 |
| 5375557 |
High pressure liquid phase epitaxy reactor chamber with direct see through capability |
Dec. 27, 1994 |
| 5308800 |
Apparatus and method for forming textured bulk high temperature superconducting materials |
May. 3, 1994 |
| 5141721 |
Apparatus for growing a single crystal of a semiconductor compound by using a horizontal zone melt technique |
Aug. 25, 1992 |
| 5114528 |
Edge-defined contact heater apparatus and method for floating zone crystal growth |
May. 19, 1992 |
| 5074952 |
Zone-melt recrystallization method and apparatus |
Dec. 24, 1991 |
| 5057287 |
Liquid encapsulated zone melting crystal growth method and apparatus |
Oct. 15, 1991 |
| 5034199 |
Zone melt recrystallization apparatus |
Jul. 23, 1991 |
| 5007980 |
Liquid encapsulated zone melting crystal growth method and apparatus |
Apr. 16, 1991 |
| 4925636 |
Apparatus for directional solidification of a crystal material |
May. 15, 1990 |
| 4749438 |
Method and apparatus for zone recrystallization |
Jun. 7, 1988 |
| 4740264 |
Liquid encapsulated float zone process and apparatus |
Apr. 26, 1988 |
| 4659422 |
Process for producing monocrystalline layer on insulator |
Apr. 21, 1987 |
| 4589951 |
Method for annealing by a high energy beam to form a single-crystal film |
May. 20, 1986 |
| 4285760 |
Zone purification of cylindrical ingots |
Aug. 25, 1981 |
| 4273608 |
Method of forming a sheet of single crystal semiconductor material |
Jun. 16, 1981 |
| 4267154 |
Apparatus for manufacturing high quality crystals |
May. 12, 1981 |
| 4146567 |
Zone melting apparatus having resiliently biased cooling means |
Mar. 27, 1979 |
| 4039283 |
Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod |
Aug. 2, 1977 |
| 3935058 |
Zone melting process |
Jan. 27, 1976 |
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