| |
 |
|
Class Information
Number: 117/207
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Apparatus > For crystallization from liquid or supercritical state > Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor (e.g., verneuil method)
Description: Subject matter in which droplets or solid particles of precursor* are moved as discrete entities to a thin-film liquid precursor* mass from which the single-crystal* product is grown and which precursor is not contained by a crucible.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7402208 |
Method and equipment for producing biopolymer crystal |
Jul. 22, 2008 |
| 7399360 |
Crucible and method of growing single crystal by using crucible |
Jul. 15, 2008 |
| 7357835 |
Production of crystalline materials by using high intensity ultrasound |
Apr. 15, 2008 |
| 7344596 |
System and method for crystal growing |
Mar. 18, 2008 |
| 6623708 |
High density protein crystal growth |
Sep. 23, 2003 |
| 6458202 |
Process for preparing single crystal silicon having uniform thermal history |
Oct. 1, 2002 |
| 5531185 |
Manufacturing apparatus for use in a micro-gravity environment |
Jul. 2, 1996 |
| 5367981 |
Apparatus for manufacturing crystals through floating zone method |
Nov. 29, 1994 |
| 5108720 |
Float zone processing of particulate silicon |
Apr. 28, 1992 |
| 5006317 |
Process for producing crystalline silicon ingot in a fluidized bed reactor |
Apr. 9, 1991 |
| 4062653 |
Powder flow control device for growing Verneuil crystals |
Dec. 13, 1977 |
| 4000977 |
Apparatus for producing monocrystals by the Verneuil technique |
Jan. 4, 1977 |
|
|
|
