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Class Information
Number: 117/109
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > Fully-sealed or vacuum-maintained chamber (e.g., ampoule)
Description: Subject matter in which a sealed chamber (e.g., ampoule) is used or in which the only communication between a reaction chamber and the external environment is a vacuum-maintaining means.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7625447 |
Method of growing semiconductor crystal |
Dec. 1, 2009 |
| 7611579 |
Systems and methods for synthesis of extended length nanostructures |
Nov. 3, 2009 |
| 7594968 |
Ultratough CVD single crystal diamond and three dimensional growth thereof |
Sep. 29, 2009 |
| 7591897 |
Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures |
Sep. 22, 2009 |
| 7553373 |
Silicon carbide single crystal and production thereof |
Jun. 30, 2009 |
| 7553372 |
Method of growing semiconductor crystal |
Jun. 30, 2009 |
| 7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
Jun. 16, 2009 |
| 7537659 |
Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained |
May. 26, 2009 |
| 7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth |
Apr. 28, 2009 |
| 7501024 |
Carbon nanohorn producing device and carbon nanohorn producing method |
Mar. 10, 2009 |
| 7497906 |
Seed crystal fixing apparatus and a method for fixing the seed crystal |
Mar. 3, 2009 |
| 7449065 |
Method for the growth of large low-defect single crystals |
Nov. 11, 2008 |
| 7387679 |
Silicon carbide single crystal and method and apparatus for producing the same |
Jun. 17, 2008 |
| 7323051 |
One hundred millimeter single crystal silicon carbide wafer |
Jan. 29, 2008 |
| 7316746 |
Crystals for a semiconductor radiation detector and method for making the crystals |
Jan. 8, 2008 |
| 7314520 |
Low 1c screw dislocation 3 inch silicon carbide wafer |
Jan. 1, 2008 |
| 7314521 |
Low micropipe 100 mm silicon carbide wafer |
Jan. 1, 2008 |
| 7300519 |
Reduction of subsurface damage in the production of bulk SiC crystals |
Nov. 27, 2007 |
| 7279041 |
Atomic layer deposition methods and atomic layer deposition tools |
Oct. 9, 2007 |
| 7220313 |
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
May. 22, 2007 |
| 7220321 |
Apparatus and processes for the mass production of photovoltaic modules |
May. 22, 2007 |
| 7208044 |
Topotactic anion exchange oxide films and method of producing the same |
Apr. 24, 2007 |
| 7147715 |
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
Dec. 12, 2006 |
| 7087112 |
Nitride ceramics to mount aluminum nitride seed for sublimation growth |
Aug. 8, 2006 |
| 7083680 |
Sublimation and purification method |
Aug. 1, 2006 |
| 7056383 |
Tantalum based crucible |
Jun. 6, 2006 |
| 7048798 |
Silicon carbide single crystal and method and apparatus for producing the same |
May. 23, 2006 |
| 7045009 |
Method and apparatus for manufacturing single crystal |
May. 16, 2006 |
| 6984448 |
Cubic boron nitride clusters |
Jan. 10, 2006 |
| 6962624 |
Method and device for depositing in particular organic layers using organic vapor phase deposition |
Nov. 8, 2005 |
| 6916374 |
Atomic layer deposition methods and atomic layer deposition tools |
Jul. 12, 2005 |
| 6863728 |
Apparatus for growing low defect density silicon carbide |
Mar. 8, 2005 |
| 6833027 |
Method of manufacturing high voltage schottky diamond diodes with low boron doping |
Dec. 21, 2004 |
| 6783592 |
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations |
Aug. 31, 2004 |
| 6770137 |
Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
Aug. 3, 2004 |
| 6569240 |
Dielectric film and method for forming the same |
May. 27, 2003 |
| 6562130 |
Low defect axially grown single crystal silicon carbide |
May. 13, 2003 |
| 6562131 |
Method for growing single crystal silicon carbide |
May. 13, 2003 |
| 6554897 |
Method of producing silicon carbide |
Apr. 29, 2003 |
| 6547877 |
Tantalum crucible fabrication and treatment |
Apr. 15, 2003 |
| 6537371 |
Niobium crucible fabrication and treatment |
Mar. 25, 2003 |
| 6508880 |
Apparatus for growing low defect density silicon carbide |
Jan. 21, 2003 |
| 6497764 |
Method for growing SiC single crystals |
Dec. 24, 2002 |
| 6488767 |
High surface quality GaN wafer and method of fabricating same |
Dec. 3, 2002 |
| 6464781 |
Method of suppressing convection in a fluid in a cylindrical vessel |
Oct. 15, 2002 |
| 6451112 |
Method and apparatus for fabricating high quality single crystal |
Sep. 17, 2002 |
| 6451113 |
Method and apparatus for growing oriented whisker arrays |
Sep. 17, 2002 |
| 6440214 |
Method of growing a semiconductor layer |
Aug. 27, 2002 |
| 6428621 |
Method for growing low defect density silicon carbide |
Aug. 6, 2002 |
| 6375739 |
Apparatus and process for crystal growth |
Apr. 23, 2002 |
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