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Class Information
Number: 117/105
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
Description: Subject matter in which a growth-influencing parameter, such as temperature, precursor* composition, precursor* concentration, or precursor* flow rate, is varied (e.g., modulated) during growth and as a result growth is altered, usually so that distinct layers of single-crystals* are formed or so that a single-crystal* of varying internal composition is formed (e.g., superlattice).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615203 |
Single crystal diamond |
Nov. 10, 2009 |
| 7611579 |
Systems and methods for synthesis of extended length nanostructures |
Nov. 3, 2009 |
| 7608539 |
ALD method and apparatus |
Oct. 27, 2009 |
| 7601215 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films |
Oct. 13, 2009 |
| 7582161 |
Atomic layer deposited titanium-doped indium oxide films |
Sep. 1, 2009 |
| 7553372 |
Method of growing semiconductor crystal |
Jun. 30, 2009 |
| 7553373 |
Silicon carbide single crystal and production thereof |
Jun. 30, 2009 |
| 7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Jun. 30, 2009 |
| 7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
Jun. 16, 2009 |
| 7540920 |
Silicon-containing layer deposition with silicon compounds |
Jun. 2, 2009 |
| 7537660 |
Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit |
May. 26, 2009 |
| 7534412 |
Large-volume CaF.sub.2 single crystals with reduced scattering and improved laser stability, and uses thereof |
May. 19, 2009 |
| 7524372 |
Method for manufacturing diamond single crystal substrate |
Apr. 28, 2009 |
| 7517406 |
Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same |
Apr. 14, 2009 |
| 7514342 |
Method and apparatus for forming deposited film |
Apr. 7, 2009 |
| 7504643 |
Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement |
Mar. 17, 2009 |
| 7501024 |
Carbon nanohorn producing device and carbon nanohorn producing method |
Mar. 10, 2009 |
| 7495239 |
Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement |
Feb. 24, 2009 |
| 7491269 |
Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier |
Feb. 17, 2009 |
| 7488386 |
Atomic layer deposition methods and chemical vapor deposition methods |
Feb. 10, 2009 |
| 7482235 |
Semiconductor device and method of manufacturing the same |
Jan. 27, 2009 |
| 7481879 |
Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
Jan. 27, 2009 |
| 7479443 |
Germanium deposition |
Jan. 20, 2009 |
| 7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
Dec. 16, 2008 |
| 7435297 |
Molten-salt-based growth of group III nitrides |
Oct. 14, 2008 |
| 7427326 |
Minimizing degradation of SiC bipolar semiconductor devices |
Sep. 23, 2008 |
| 7416606 |
Method of forming a layer of silicon carbide on a silicon wafer |
Aug. 26, 2008 |
| 7393412 |
Method for manufacturing compound semiconductor epitaxial substrate |
Jul. 1, 2008 |
| 7384481 |
Method of forming a rare-earth dielectric layer |
Jun. 10, 2008 |
| 7384477 |
Method for producing a single crystal and a single crystal |
Jun. 10, 2008 |
| 7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
May. 27, 2008 |
| 7374617 |
Atomic layer deposition methods and chemical vapor deposition methods |
May. 20, 2008 |
| 7371281 |
Silicon carbide single crystal and method and apparatus for producing the same |
May. 13, 2008 |
| 7361220 |
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
Apr. 22, 2008 |
| 7309394 |
Ultraviolet light-emitting device in which p-type semiconductor is used |
Dec. 18, 2007 |
| 7303632 |
Vapor assisted growth of gallium nitride |
Dec. 4, 2007 |
| 7294360 |
Conformal coatings for micro-optical elements, and method for making the same |
Nov. 13, 2007 |
| 7279041 |
Atomic layer deposition methods and atomic layer deposition tools |
Oct. 9, 2007 |
| 7276117 |
Method of forming semi-insulating silicon carbide single crystal |
Oct. 2, 2007 |
| 7258742 |
Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
Aug. 21, 2007 |
| 7255744 |
Low-resistivity n-type semiconductor diamond and method of its manufacture |
Aug. 14, 2007 |
| 7250083 |
ALD method and apparatus |
Jul. 31, 2007 |
| 7232487 |
Method for making an epitaxial germanium temperature sensor |
Jun. 19, 2007 |
| 7229498 |
Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys |
Jun. 12, 2007 |
| 7220313 |
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
May. 22, 2007 |
| 7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
May. 15, 2007 |
| 7211144 |
Pulsed nucleation deposition of tungsten layers |
May. 1, 2007 |
| 7208044 |
Topotactic anion exchange oxide films and method of producing the same |
Apr. 24, 2007 |
| 7192483 |
Method for diamond coating substrates |
Mar. 20, 2007 |
| 7169227 |
Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
Jan. 30, 2007 |
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