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Class Information
Number: 117/105
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
Description: Subject matter in which a growth-influencing parameter, such as temperature, precursor* composition, precursor* concentration, or precursor* flow rate, is varied (e.g., modulated) during growth and as a result growth is altered, usually so that distinct layers of single-crystals* are formed or so that a single-crystal* of varying internal composition is formed (e.g., superlattice).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7435297 |
Molten-salt-based growth of group III nitrides |
Oct. 14, 2008 |
| 7427326 |
Minimizing degradation of SiC bipolar semiconductor devices |
Sep. 23, 2008 |
| 7416606 |
Method of forming a layer of silicon carbide on a silicon wafer |
Aug. 26, 2008 |
| 7393412 |
Method for manufacturing compound semiconductor epitaxial substrate |
Jul. 1, 2008 |
| 7384477 |
Method for producing a single crystal and a single crystal |
Jun. 10, 2008 |
| 7384481 |
Method of forming a rare-earth dielectric layer |
Jun. 10, 2008 |
| 7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
May. 27, 2008 |
| 7374617 |
Atomic layer deposition methods and chemical vapor deposition methods |
May. 20, 2008 |
| 7371281 |
Silicon carbide single crystal and method and apparatus for producing the same |
May. 13, 2008 |
| 7361220 |
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
Apr. 22, 2008 |
| 7309394 |
Ultraviolet light-emitting device in which p-type semiconductor is used |
Dec. 18, 2007 |
| 7303632 |
Vapor assisted growth of gallium nitride |
Dec. 4, 2007 |
| 7294360 |
Conformal coatings for micro-optical elements, and method for making the same |
Nov. 13, 2007 |
| 7279041 |
Atomic layer deposition methods and atomic layer deposition tools |
Oct. 9, 2007 |
| 7276117 |
Method of forming semi-insulating silicon carbide single crystal |
Oct. 2, 2007 |
| 7258742 |
Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
Aug. 21, 2007 |
| 7255744 |
Low-resistivity n-type semiconductor diamond and method of its manufacture |
Aug. 14, 2007 |
| 7250083 |
ALD method and apparatus |
Jul. 31, 2007 |
| 7232487 |
Method for making an epitaxial germanium temperature sensor |
Jun. 19, 2007 |
| 7229498 |
Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys |
Jun. 12, 2007 |
| 7220313 |
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
May. 22, 2007 |
| 7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
May. 15, 2007 |
| 7211144 |
Pulsed nucleation deposition of tungsten layers |
May. 1, 2007 |
| 7208044 |
Topotactic anion exchange oxide films and method of producing the same |
Apr. 24, 2007 |
| 7192483 |
Method for diamond coating substrates |
Mar. 20, 2007 |
| 7169227 |
Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
Jan. 30, 2007 |
| 7153363 |
Atomic layer deposition |
Dec. 26, 2006 |
| 7147715 |
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
Dec. 12, 2006 |
| 7141115 |
Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers |
Nov. 28, 2006 |
| 7141117 |
Method of fixing seed crystal and method of manufacturing single crystal using the same |
Nov. 28, 2006 |
| 7135073 |
Method and system for semiconductor crystal production with temperature management |
Nov. 14, 2006 |
| 7115167 |
Method of growing a semiconductor multi-layer structure |
Oct. 3, 2006 |
| 7108745 |
Formation method for semiconductor layer |
Sep. 19, 2006 |
| 7083679 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
Aug. 1, 2006 |
| 7084049 |
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate |
Aug. 1, 2006 |
| 7077904 |
Method for atomic layer deposition (ALD) of silicon oxide film |
Jul. 18, 2006 |
| 7077902 |
Atomic layer deposition methods |
Jul. 18, 2006 |
| 7060132 |
Method and apparatus of growing a thin film |
Jun. 13, 2006 |
| 7048798 |
Silicon carbide single crystal and method and apparatus for producing the same |
May. 23, 2006 |
| 7045009 |
Method and apparatus for manufacturing single crystal |
May. 16, 2006 |
| 7041170 |
Method of producing high quality relaxed silicon germanium layers |
May. 9, 2006 |
| 7037372 |
Method of growing a thin film onto a substrate |
May. 2, 2006 |
| 7033436 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Apr. 25, 2006 |
| 7033858 |
Method for making Group III nitride devices and devices produced thereby |
Apr. 25, 2006 |
| 7018597 |
High resistivity silicon carbide single crystal |
Mar. 28, 2006 |
| 6994750 |
Film evaluating method, temperature measuring method, and semiconductor device manufacturing method |
Feb. 7, 2006 |
| 6953703 |
Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
Oct. 11, 2005 |
| 6939579 |
ALD reactor and method with controlled wall temperature |
Sep. 6, 2005 |
| 6936103 |
Low indium content quantum well structures |
Aug. 30, 2005 |
| 6923859 |
Apparatus for manufacturing GaN substrate and manufacturing method thereof |
Aug. 2, 2005 |
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