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Class Information
Number: 117/105
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
Description: Subject matter in which a growth-influencing parameter, such as temperature, precursor* composition, precursor* concentration, or precursor* flow rate, is varied (e.g., modulated) during growth and as a result growth is altered, usually so that distinct layers of single-crystals* are formed or so that a single-crystal* of varying internal composition is formed (e.g., superlattice).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8685165 Metal oxide films Apr. 1, 2014
8673074 Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) Mar. 18, 2014
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor Mar. 4, 2014
8652255 Method of producing epitaxial layers with low basal plane dislocation concentrations Feb. 18, 2014
8647435 HVPE apparatus and methods for growth of p-type single crystal group III nitride materials Feb. 11, 2014
8636844 Oxygen engineered single-crystal REO template Jan. 28, 2014
8628615 Titanium-doped indium oxide films Jan. 14, 2014
8603243 Tracking carbon to silicon ratio in situ during silicon carbide growth Dec. 10, 2013
8591651 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby Nov. 26, 2013
8568530 Use of cyclopentadienyl type hafnium and zirconium precursors in atomic layer deposition Oct. 29, 2013
8568531 Seed holder for crystal growth reactors Oct. 29, 2013
8568529 HVPE chamber hardware Oct. 29, 2013
8551246 Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer Oct. 8, 2013
8529697 Growth of nitride semiconductor crystals Sep. 10, 2013
8512471 Halosilane assisted PVT growth of SiC Aug. 20, 2013
8470090 AlN crystal and method for growing the same, and AlN crystal substrate Jun. 25, 2013
8465588 Ammonothermal method for growth of bulk gallium nitride Jun. 18, 2013
8455372 Method for cleaning and passivating gallium arsenide surface autologous oxide and depositing AL203 dielectric Jun. 4, 2013
8444765 Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride May. 21, 2013
8404045 Method for manufacturing group III nitride single crystals Mar. 26, 2013
8394196 Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon Mar. 12, 2013
8394197 Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques Mar. 12, 2013
8372199 Bulk GaN and AlGaN single crystals Feb. 12, 2013
8349076 Method of fabricating GaN substrate Jan. 8, 2013
8349078 Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device Jan. 8, 2013
8338273 Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates Dec. 25, 2012
8334015 Vapor based combinatorial processing Dec. 18, 2012
8278666 Method and apparatus for growing high purity 2H-silicon carbide Oct. 2, 2012
8268076 SOI wafers having M.sub.xO.sub.y oxide layers on a substrate wafer and an amorphous interlayer adjacent the substrate wafer Sep. 18, 2012
8236103 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer Aug. 7, 2012
8231724 Reactor for polycrystalline silicon and polycrystalline silicon production method Jul. 31, 2012
8231728 Epitaxial growth process Jul. 31, 2012
8226767 Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof Jul. 24, 2012
8216367 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate Jul. 10, 2012
8197596 Crystal growth method and reactor design Jun. 12, 2012
8187380 Method of growing single crystal diamond in a plasma reactor May. 29, 2012
8168000 III-nitride semiconductor device fabrication May. 1, 2012
8143147 Methods and systems for forming thin films Mar. 27, 2012
8137459 Method for producing nanoparticles for magnetic fluids by electron-beam evaporation and condensation in vacuum, a magnetic fluid producing method and magnetic fluid produced according to said Mar. 20, 2012
8123859 Method and apparatus for producing large, single-crystals of aluminum nitride Feb. 28, 2012
8071466 Zinc sulfide crystals for optical components Dec. 6, 2011
8062422 Method and apparatus for generating a precursor for a semiconductor processing system Nov. 22, 2011
8048223 Grown diamond mosaic separation Nov. 1, 2011
8048225 Large-area bulk gallium nitride wafer and method of manufacture Nov. 1, 2011
8043687 Structure including a graphene layer and method for forming the same Oct. 25, 2011
8021482 Method for eliminating the precipitates in a II-IV semiconductor material by annealing Sep. 20, 2011
8007588 Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus Aug. 30, 2011
7976630 Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture Jul. 12, 2011
7955435 Method of producing high quality relaxed silicon germanium layers Jun. 7, 2011
7947128 Atomic layer epitaxy processed insulation May. 24, 2011

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