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Class Information
Number: 117/104
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > Using an organic precursor (e.g., propane, metal-organic, mocvd, movpe)
Description: Subject matter in which the product contains atoms derived from a precursor* which is an organic compound as defined in Class 532.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7625448 |
Inlet system for an MOCVD reactor |
Dec. 1, 2009 |
| 7621999 |
Method and apparatus for AlGan vapor phase growth |
Nov. 24, 2009 |
| 7601217 |
Method of fabricating an epitaxially grown layer |
Oct. 13, 2009 |
| 7572331 |
Method of manufacturing a wafer |
Aug. 11, 2009 |
| 7560086 |
Single crystal diamond having .sup.12C, .sup.13C, and phosphorous |
Jul. 14, 2009 |
| 7556687 |
Gallium nitride crystal substrate and method of producing same |
Jul. 7, 2009 |
| 7556977 |
Semiconductor manufacturing method and semiconductor laser device manufacturing method |
Jul. 7, 2009 |
| 7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Jun. 30, 2009 |
| 7553468 |
Method for producing solid product |
Jun. 30, 2009 |
| 7524373 |
Apparatus and semiconductor co-crystal |
Apr. 28, 2009 |
| RE40647 |
Method of producing plasma display panel with protective layer of an alkaline earth oxide |
Mar. 10, 2009 |
| 7473316 |
Method of growing nitrogenous semiconductor crystal materials |
Jan. 6, 2009 |
| 7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
Dec. 16, 2008 |
| 7459023 |
Method for producing semiconductor crystal |
Dec. 2, 2008 |
| 7445672 |
Method of forming group-III nitride crystal, layered structure and epitaxial substrate |
Nov. 4, 2008 |
| 7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
Oct. 28, 2008 |
| 7425237 |
Method for depositing a material on a substrate wafer |
Sep. 16, 2008 |
| 7393412 |
Method for manufacturing compound semiconductor epitaxial substrate |
Jul. 1, 2008 |
| 7384479 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength |
Jun. 10, 2008 |
| 7384481 |
Method of forming a rare-earth dielectric layer |
Jun. 10, 2008 |
| 7377976 |
Method for growing thin oxide films |
May. 27, 2008 |
| 7371282 |
Solid solution wide bandgap semiconductor materials |
May. 13, 2008 |
| 7361222 |
Device and method for producing single crystals by vapor deposition |
Apr. 22, 2008 |
| 7354477 |
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
Apr. 8, 2008 |
| 7351285 |
Method and system for forming a variable thickness seed layer |
Apr. 1, 2008 |
| 7341944 |
Methods for synthesis of metal nanowires |
Mar. 11, 2008 |
| 7311777 |
Process for manufacturing quartz crystal element |
Dec. 25, 2007 |
| 7309394 |
Ultraviolet light-emitting device in which p-type semiconductor is used |
Dec. 18, 2007 |
| 7303630 |
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
Dec. 4, 2007 |
| 7303632 |
Vapor assisted growth of gallium nitride |
Dec. 4, 2007 |
| 7273664 |
Preparation method of a coating of gallium nitride |
Sep. 25, 2007 |
| 7258742 |
Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
Aug. 21, 2007 |
| 7258741 |
System and method for producing synthetic diamond |
Aug. 21, 2007 |
| 7255743 |
Method of making synthetic gems comprising elements recovered from remains of a species of the kingdom animalia |
Aug. 14, 2007 |
| 7255744 |
Low-resistivity n-type semiconductor diamond and method of its manufacture |
Aug. 14, 2007 |
| 7255746 |
Nitrogen sources for molecular beam epitaxy |
Aug. 14, 2007 |
| 7232487 |
Method for making an epitaxial germanium temperature sensor |
Jun. 19, 2007 |
| 7229498 |
Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys |
Jun. 12, 2007 |
| 7220451 |
Process for producing metal thin films by ALD |
May. 22, 2007 |
| 7217323 |
Equipment and method for manufacturing silicon carbide single crystal |
May. 15, 2007 |
| 7214599 |
High yield method for preparing silicon nanocrystal with chemically accessible surfaces |
May. 8, 2007 |
| 7201886 |
Single crystal diamond tool |
Apr. 10, 2007 |
| 7196007 |
Systems and methods of forming refractory metal nitride layers using disilazanes |
Mar. 27, 2007 |
| 7193098 |
Process for producing semiconductor nanocrystal cores, core-shell, core-buffer-shell, and multiple layer systems in a non-coordinating solvent utilizing in situ surfactant generation |
Mar. 20, 2007 |
| 7192483 |
Method for diamond coating substrates |
Mar. 20, 2007 |
| 7182811 |
Semiconductor light emitting device and method for producing the same |
Feb. 27, 2007 |
| 7175709 |
Epitaxy layer and method of forming the same |
Feb. 13, 2007 |
| 7160529 |
Diamondoid-containing field emission devices |
Jan. 9, 2007 |
| 7148129 |
Method of growing selective area by metal organic chemical vapor deposition |
Dec. 12, 2006 |
| 7128785 |
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates |
Oct. 31, 2006 |
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