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Class Information
Number: 117/102
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > With significant flow manipulation or condition, other than merely specifying the components or their sequence or both
Description: Subject matter in which significant gas or vapor flow manipulation or condition, other than merely specifying the components of precursors* or their sequence or both, is specified.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
Oct. 21, 2008 |
| 7416604 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
Aug. 26, 2008 |
| 7416605 |
Anneal of epitaxial layer in a semiconductor device |
Aug. 26, 2008 |
| 7393412 |
Method for manufacturing compound semiconductor epitaxial substrate |
Jul. 1, 2008 |
| 7374617 |
Atomic layer deposition methods and chemical vapor deposition methods |
May. 20, 2008 |
| 7250083 |
ALD method and apparatus |
Jul. 31, 2007 |
| 7235130 |
Apparatus and method for diamond production |
Jun. 26, 2007 |
| 7229498 |
Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys |
Jun. 12, 2007 |
| 7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
May. 15, 2007 |
| 7211144 |
Pulsed nucleation deposition of tungsten layers |
May. 1, 2007 |
| 7153361 |
Production method of opto-electronic device array |
Dec. 26, 2006 |
| 7150789 |
Atomic layer deposition methods |
Dec. 19, 2006 |
| 7141115 |
Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers |
Nov. 28, 2006 |
| 7128785 |
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates |
Oct. 31, 2006 |
| 7128787 |
Atomic layer deposition method |
Oct. 31, 2006 |
| 7105054 |
Method and apparatus of growing a thin film onto a substrate |
Sep. 12, 2006 |
| 7094289 |
Method for manufacturing highly-crystallized oxide powder |
Aug. 22, 2006 |
| 7083679 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
Aug. 1, 2006 |
| 7084049 |
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate |
Aug. 1, 2006 |
| 7077902 |
Atomic layer deposition methods |
Jul. 18, 2006 |
| 7060132 |
Method and apparatus of growing a thin film |
Jun. 13, 2006 |
| 7041170 |
Method of producing high quality relaxed silicon germanium layers |
May. 9, 2006 |
| 7037372 |
Method of growing a thin film onto a substrate |
May. 2, 2006 |
| 7033436 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Apr. 25, 2006 |
| 7018469 |
Atomic layer deposition methods of forming silicon dioxide comprising layers |
Mar. 28, 2006 |
| 7014710 |
Method of growing single crystal Gallium Nitride on silicon substrate |
Mar. 21, 2006 |
| RE38937 |
Susceptor for vapor-phase growth apparatus |
Jan. 24, 2006 |
| 6972050 |
Method for depositing in particular crystalline layers, and device for carrying out the method |
Dec. 6, 2005 |
| 6962624 |
Method and device for depositing in particular organic layers using organic vapor phase deposition |
Nov. 8, 2005 |
| 6942731 |
Method for improving the efficiency of epitaxially produced quantum dot semiconductor components |
Sep. 13, 2005 |
| 6936103 |
Low indium content quantum well structures |
Aug. 30, 2005 |
| 6932866 |
Method for depositing in particular crystalline layers |
Aug. 23, 2005 |
| 6923860 |
Oxidation of material for tunnel magneto-resistive sensors |
Aug. 2, 2005 |
| 6902620 |
Atomic layer deposition systems and methods |
Jun. 7, 2005 |
| 6896730 |
Atomic layer deposition apparatus and methods |
May. 24, 2005 |
| 6893503 |
Method of manufacturing a semiconductor device |
May. 17, 2005 |
| 6884291 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength band |
Apr. 26, 2005 |
| 6881263 |
Method of growing a thin film onto a substrate |
Apr. 19, 2005 |
| 6875272 |
Method for preparing GaN based compound semiconductor crystal |
Apr. 5, 2005 |
| 6869481 |
Method and device for regulating the differential pressure in epitaxy reactors |
Mar. 22, 2005 |
| 6863727 |
Method of depositing transition metal nitride thin films |
Mar. 8, 2005 |
| 6863726 |
Vapor phase growth method of oxide dielectric film |
Mar. 8, 2005 |
| 6860943 |
Method for producing group III nitride compound semiconductor |
Mar. 1, 2005 |
| 6860138 |
Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz chamber |
Mar. 1, 2005 |
| 6858081 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
Feb. 22, 2005 |
| 6852160 |
Epitaxial oxide films via nitride conversion |
Feb. 8, 2005 |
| 6849241 |
Device and method for depositing one or more layers on a substrate |
Feb. 1, 2005 |
| 6849122 |
Thin layer metal chemical vapor deposition |
Feb. 1, 2005 |
| 6841003 |
Method for forming carbon nanotubes with intermediate purification steps |
Jan. 11, 2005 |
| 6841002 |
Method for forming carbon nanotubes with post-treatment step |
Jan. 11, 2005 |
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