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Browse by Category: Main > Material Science
Class Information
Number: 117/101
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, miller index)
Description: Subject matter in which (a) the arrangement of the substrate is specified, for example a wafer cartridge or tray or a bank of wafers, or (b) the crystallography of the substrate is specified; e.g., crystal lattice orientation, Miller index.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8673074 Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) Mar. 18, 2014
8636844 Oxygen engineered single-crystal REO template Jan. 28, 2014
8597427 Method of manufacturing a semiconductor device Dec. 3, 2013
8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy Nov. 26, 2013
8592289 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer Nov. 26, 2013
8585822 Method for testing group III-nitride wafers and group III-nitride wafers with test data Nov. 19, 2013
8585821 SiC epitaxial substrate and method for producing the same Nov. 19, 2013
8580035 Large aluminum nitride crystals with reduced defects and methods of making them Nov. 12, 2013
8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime Nov. 5, 2013
8557043 Method for testing group III-nitride wafers and group III-nitride wafers with test data Oct. 15, 2013
8551246 Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer Oct. 8, 2013
8524012 Technique for the growth of planar semi-polar gallium nitride Sep. 3, 2013
8506707 Substrate surface modifications for compositional gradation of crystalline materials and associated products Aug. 13, 2013
8491718 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon Jul. 23, 2013
8475588 Wafer structure and epitaxial growth method for growing the same Jul. 2, 2013
8470091 SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device Jun. 25, 2013
8465587 Modern hydride vapor-phase epitaxy system and methods Jun. 18, 2013
8449675 Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer May. 28, 2013
8415546 Single crystalline metal nanoplate and the fabrication method thereof Apr. 9, 2013
8404042 Group-III nitride crystal composite Mar. 26, 2013
8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data Jan. 22, 2013
8349077 Large aluminum nitride crystals with reduced defects and methods of making them Jan. 8, 2013
8278672 Semiconductor light-emitting device and fabrication method thereof Oct. 2, 2012
8268076 SOI wafers having M.sub.xO.sub.y oxide layers on a substrate wafer and an amorphous interlayer adjacent the substrate wafer Sep. 18, 2012
8262796 .beta.-Ga.sub.2O.sub.3 single crystal growing method, thin-film single crystal growing method, Ga.sub.2O.sub.3 light-emitting device, and its manufacturing method Sep. 11, 2012
8263424 Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth Sep. 11, 2012
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8226767 Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof Jul. 24, 2012
8221548 Diamond semiconductor element and process for producing the same Jul. 17, 2012
8221549 Silicon carbide single crystal wafer and producing method thereof Jul. 17, 2012
8216366 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film Jul. 10, 2012
8197598 Method for manufacturing iron silicide nano-wires Jun. 12, 2012
8168000 III-nitride semiconductor device fabrication May. 1, 2012
8152919 Epitaxial silicon wafer and fabrication method thereof Apr. 10, 2012
8147612 Method for manufacturing gallium nitride crystal and gallium nitride wafer Apr. 3, 2012
8133318 Epitaxially coated silicon wafer with 110 orientation and method for producing it Mar. 13, 2012
8128756 Technique for the growth of planar semi-polar gallium nitride Mar. 6, 2012
8119505 Method of making group III nitride-based compound semiconductor Feb. 21, 2012
8118934 Non-polar III-V nitride material and production method Feb. 21, 2012
8088222 Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials Jan. 3, 2012
8043429 Method for fabricating filament type high-temperature superconducting wire Oct. 25, 2011
8038795 Epitaxial growth and cloning of a precursor chiral nanotube Oct. 18, 2011
7998273 Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon Aug. 16, 2011
7942966 Method of growing boron doped single crystal diamond in a plasma reactor May. 17, 2011
7910462 Growing [110] silicon on [001] oriented substrate with rare-earth oxide buffer film Mar. 22, 2011
7892356 Diamond composite substrate and process for producing the same Feb. 22, 2011
7857907 Methods of forming silicon nanocrystals by laser annealing Dec. 28, 2010
7842134 Diamond based substrate for electronic devices Nov. 30, 2010
7830027 Level realignment following an epitaxy step Nov. 9, 2010

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