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Class Information
Number: 117/101
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, miller index)
Description: Subject matter in which (a) the arrangement of the substrate is specified, for example a wafer cartridge or tray or a bank of wafers, or (b) the crystallography of the substrate is specified; e.g., crystal lattice orientation, Miller index.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615203 |
Single crystal diamond |
Nov. 10, 2009 |
| 7604697 |
Heteroepitaxial growth method for gallium nitride |
Oct. 20, 2009 |
| 7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
Sep. 29, 2009 |
| 7560086 |
Single crystal diamond having .sup.12C, .sup.13C, and phosphorous |
Jul. 14, 2009 |
| 7553372 |
Method of growing semiconductor crystal |
Jun. 30, 2009 |
| 7537660 |
Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit |
May. 26, 2009 |
| 7528462 |
Aluminum nitride single-crystal multi-layered substrate |
May. 5, 2009 |
| RE40647 |
Method of producing plasma display panel with protective layer of an alkaline earth oxide |
Mar. 10, 2009 |
| 7481881 |
Method of manufacturing GaN crystal substrate |
Jan. 27, 2009 |
| 7479188 |
Process for producing GaN substrate |
Jan. 20, 2009 |
| 7473316 |
Method of growing nitrogenous semiconductor crystal materials |
Jan. 6, 2009 |
| 7456084 |
Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer |
Nov. 25, 2008 |
| 7393411 |
.beta.-Ga.sub.2O.sub.3 single crystal growing method, thin-film single crystal growing method, Ga.sub.2O.sub.3 light-emitting device, and its manufacturing method |
Jul. 1, 2008 |
| 7390581 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Jun. 24, 2008 |
| 7384481 |
Method of forming a rare-earth dielectric layer |
Jun. 10, 2008 |
| 7381267 |
Heteroatomic single-crystal layers |
Jun. 3, 2008 |
| 7368014 |
Variable temperature deposition methods |
May. 6, 2008 |
| 7357837 |
GaN single crystal substrate and method of making the same |
Apr. 15, 2008 |
| 7354477 |
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
Apr. 8, 2008 |
| 7341883 |
Silicon germanium semiconductive alloy and method of fabricating same |
Mar. 11, 2008 |
| 7320732 |
Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides |
Jan. 22, 2008 |
| 7303632 |
Vapor assisted growth of gallium nitride |
Dec. 4, 2007 |
| 7303630 |
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
Dec. 4, 2007 |
| 7288153 |
Method of fabricating orientation film for crystal display device |
Oct. 30, 2007 |
| 7279041 |
Atomic layer deposition methods and atomic layer deposition tools |
Oct. 9, 2007 |
| 7270708 |
Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer |
Sep. 18, 2007 |
| 7258743 |
Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
Aug. 21, 2007 |
| 7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
May. 15, 2007 |
| 7217323 |
Equipment and method for manufacturing silicon carbide single crystal |
May. 15, 2007 |
| 7211144 |
Pulsed nucleation deposition of tungsten layers |
May. 1, 2007 |
| 7208044 |
Topotactic anion exchange oxide films and method of producing the same |
Apr. 24, 2007 |
| 7198671 |
Layered substrates for epitaxial processing, and device |
Apr. 3, 2007 |
| 7175709 |
Epitaxy layer and method of forming the same |
Feb. 13, 2007 |
| 7169227 |
Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
Jan. 30, 2007 |
| 7161148 |
Tip structures, devices on their basis, and methods for their preparation |
Jan. 9, 2007 |
| 7135074 |
Method for manufacturing silicon carbide single crystal from dislocation control seed crystal |
Nov. 14, 2006 |
| 7128785 |
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates |
Oct. 31, 2006 |
| 7128889 |
Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries |
Oct. 31, 2006 |
| 7118813 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Oct. 10, 2006 |
| 7083679 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
Aug. 1, 2006 |
| 7063742 |
N-type semiconductor diamond and its fabrication method |
Jun. 20, 2006 |
| 7037372 |
Method of growing a thin film onto a substrate |
May. 2, 2006 |
| 7033438 |
Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate |
Apr. 25, 2006 |
| 7033858 |
Method for making Group III nitride devices and devices produced thereby |
Apr. 25, 2006 |
| 6994750 |
Film evaluating method, temperature measuring method, and semiconductor device manufacturing method |
Feb. 7, 2006 |
| 6958093 |
Free-standing (Al, Ga, In)N and parting method for forming same |
Oct. 25, 2005 |
| 6942731 |
Method for improving the efficiency of epitaxially produced quantum dot semiconductor components |
Sep. 13, 2005 |
| 6940103 |
Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device |
Sep. 6, 2005 |
| 6936102 |
SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
Aug. 30, 2005 |
| 6932867 |
Method for growing thin oxide films |
Aug. 23, 2005 |
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