Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Patents

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Class Information
Number: 117
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor >
Description: (A) GENERAL STATEMENT

Class Number	Class Name	No. of Patents
117/900	Apparatus characterized by composition or treatment thereof (e.g., surface finish, surface coating)	405
117/200	Apparatus	308
117/206	For crystallization from liquid or supercritical state	113
117/207	Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor (e.g., verneuil method)	12
117/219	Having means for producing a moving solid-liquid-solid zone	28
117/221	Havind details of a stabilizing feature	42
117/220	Includin a solid member other than seed or product contacting the liquid (e.g., crucible, immersed heating element)	33
117/222	Including heating or cooling details	125
117/224	Including pressurized crystallization means (e.g., hydrothermal)	41
117/208	Seed pulling	209
117/216	Including a fully-sealed or vacuum-maintained crystallization chamber (e.g., ampoule)	45
117/213	Including a sectioned crucible (e.g., double crucible, baffle)	130
117/218	Including details of means providing product movement (e.g., shaft guides, servo means)	200
117/214	Including details of precursor replenishment	95
117/217	Including heating or cooling details (e.g., shield configuration)	272
117/215	Including sealing means details	23
117/209	Including solid member shaping means other than seed or product (e.g., edfg die)	27
117/211	Including means forming a flat shape (e.g., ribbon)	63
117/212	Pulling includes a horizontal component	27
117/210	Means for forming a hollow structure (e.g., tube, polygon)	28
117/223	Shape defined by a solid member other than seed or product (e.g., bridgman-stockbarger)	83
117/205	For forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)	26
117/201	With means for measuring, testing, or sensing	199
117/203	With a window or port for visual observation or examination	30
117/202	With responsive control means	251
117/204	With means for treating single-crystal (e.g., heat treating)	83
117/914	Crystallization on a continuous moving substrate or cooling surface (e.g., wheel, cylinder, belt)	38
117/903	Dendrite or web or cage technique	23
117/910	Downward pulling	27
117/905	Electron beam	63
117/84	Forming from vapor or gaseous state (e.g., vpe, sublimation)	444
117/87	Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)	72
117/109	Fully-sealed or vacuum-maintained chamber (e.g., ampoule)	105
117/105	Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)	387
117/108	Using an energy beam or field, a particle beam or field, or a plasma (e.g., mbe)	352
117/85	With a step of measuring, testing, or sensing	109
117/86	With responsive control	168
117/88	With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd)	297
117/101	Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, miller index)	255
117/89	Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)	584
117/92	Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser)	213
117/91	With a chemical reaction (except ionization) in a disparate zone to form a precursor	81
117/90	With pretreatment of substrate (e.g., coacting ablating)	252
117/93	With significant flow manipulation or condition, other than merely specifying the components or their sequence or both	223
117/103	Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser)	257
117/104	Using an organic precursor (e.g., propane, metal-organic, mocvd, movpe)	365
117/99	With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)	141
117/100	Fully-sealed or vacuum-maintained chamber (e.g., ampoule)	29
117/98	With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)	77
117/94	With pretreatment or preparation of a base (e.g., annealing)	280
117/95	Coating (e.g., masking, implanting)	416
117/96	For autodoping control	73
117/97	Material removal (e.g., etching, cleaning, polishing)	242
117/102	With significant flow manipulation or condition, other than merely specifying the components or their sequence or both	285
117/107	With movement of substrate or vapor or gas supply means during growth	68
117/106	With pretreatment or preparation of a base (e.g., annealing)	226
117/922	Free-standing, flat single-crystal (e.g., platelet, plate, strip, disk, tape, sheet, ribbon) {c30b 29/64}	89
117/913	Graphoepitaxy or surface modification to enhance epitaxy	80
117/924	Homogeneous composition product with enlarged crystals or oriented-crystals (e.g., columnar)	67
117/937	Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10}	91
117/951	Carbide containing (e.g., sic) {c30b 29/36}	172
117/939	Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, sige, insb) {c30b 29/40, 29/52}	151
117/938	Gold, silver, or platinum containing {c30b 29/52}	23
117/940	Halide containing (e.g., fluorphlogopite, fluor-mica) {c30b 29/12}	114
117/952	Nitride containing (e.g., gan, cbn) {c30b 29/38}	253
117/944	Oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16}	160
117/950	Aluminum containing (e.g., al2o3, ruby, corundum, sapphire, chrysoberyl) {c30b 29/20}	104
117/947	Containg ameo3 ((a2o3):(me2o3)), wherein a is trivalent and selected from the group sc, y, la, hf, or a rare earth metal and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., perovskite structure, ortho-ferrites) {c30b29/24}	48
117/945	Containing a3me5o12 (1.5(a2o3):2.5(me2o3)), wherein a is trivalent and selected from the group sc, y, la, hf, or a rare earth metal and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., non-silicate garnets) {c30b 29/28}	100
117/946	Containing ame2o4 (ao:(me2o3)), wherein a is divalent and selected from the group mg, ni, co, mn, zn, or cd and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., spinels) {c30b 29/26}	39
117/948	Niobate, vanadate, or tantalate containing {c30b 29/30}	88
117/949	Titanate, germanate, molybdate, or tungstate containing {c30b 29/32}	48
117/941	Phosphorus-oxygen bond containing (e.g., phosphate (po4)) {c30b 29/14}	40
117/942	Silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {c30b 29/16}	27
117/943	Quartz (sio2) {c30b 29/18}	21
117/953	{b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40}	280
117/954	Gallium arsenide containing (e.g., gaalas, gaas) {c30b 29/42}	482
117/955	Gallium phosphide containing {c30b 29/44}	148
117/956	{zn,cd,hg}{s,se,te} compound containing {c30b 29/46}	151
117/958	Cadmium sulfide containing (e.g., zncds) {c30b 29/50}	35
117/957	Cdhgte containing {c30b 29/48}	95
117/904	Laser beam	200
117/901	Levitation, reduced gravity, microgravity, space	65
117/917	Magnetic	82
117/925	Organic compound containing single-crystal {c30b 29/54}	79
117/927	Macromolecular compound containing (i.e., more than about 100 atoms) {c30b 29/58}	86
117/926	Tartrate containing (e.g., rochelle salt) {c30b 29/56}	19
117/916	Oxygen testing	17
117/1	Processes joining independent crystals	83
117/11	Processes of growth from liquid or supercritical state	78
117/12	Crucibleless process having movement of discrete droplets or solid particles to thin-film precursor (e.g., verneuil method)	22
117/53	Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth)	22
117/73	Havin growth from molten state (e.g., solution melt)	87
117/75	Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., vls method)	73
117/77	Gas or vapor state precursor or overpressure	47
117/81	Growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method)	179
117/83	Having bottom-up crystallization (e.g., vfg, vgf)	181
117/82	Including vertical precursor-product interface (e.g., horizontal bridgman)	80
117/74	Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)	38
117/78	Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux)	49
117/79	Unusable portion contains a metal atom (e.g., diamond or cbn growth in metal solvent)	60
117/80	Unusable portion contains an oxygen atom (e.g., oxide flux)	32
117/76	Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant)	29
117/68	Having growth from a solution comprising a solvent which is liquid at or below 20 degrees celsius (e.g., aqueous solution)	233
117/71	At pressure above 1 atmosphere (e.g., hydrothermal processes)	61
117/72	Quartz (sio2) product	29
117/70	Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis)	113
117/69	With a step of measuring, testing, or sensing	104
117/37	Having moving solid-liquid-solid region	34
117/43	Distinctly layered product (e.g., twin, soi, epitaxial crystallization)	126
117/44	Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser)	75
117/45	Non-planar crystal grown (e.g., elo)	67
117/47	Flat, free-standing (i.e., substrate-free) product (e.g., ribbon, film, sheet)	38
117/38	Including a step of measuring, testing, or sensing	11
117/39	With responsive control	20
117/40	Liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration)	81
117/49	Liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone)	39
117/50	Liquefying by energy from an electromagnetic wave or electromagnetic particle or arc or plasma (e.g., radiant heat)	38
117/51	Electromagnetic induction	30
117/52	With liquid control (e.g., vibration damping, stabilizing, melt levitation focusing coil)	22
117/46	Movement includes a horizontal component	34
117/41	Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux)	26
117/42	Product has an element in common with the unusable residual portion	17
117/48	Solid heating means contacting the liquid (e.g., immersed)	10
117/13	Having pulling during growth (e.g., czochralski method, zone drawing)	470
117/19	Forming an intended mixture (excluding mixed crystal) (e.g., doped)	146
117/21	Comprising a semiconductor with a charge carrier impurity	54
117/22	Forming adjoining crystals of different compositions (e.g., junction)	9
117/20	Comprising a silicon crystal with oxygen containing impurity	185
117/28	Including non-coincident axes of rotation (e.g., relative eccentric)	20
117/29	Passing non-induced electric current through a crystal-liquid interface (e.g., peltier)	28
117/36	Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier)	48
117/23	Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method)	45
117/26	Defines a flat product	51
117/27	Pulling includes a horizontal component	38
117/25	Defines a product with a hollow structure (e.g., tube)	24
117/24	Embedded in product (e.g., string-stabilized web)	25
117/35	With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed)	124
117/14	With a step of measuring, testing, or sensing (e.g., using tv, photo, or x-ray detector or weight changes)	176
117/15	With responsive control	199
117/16	Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method)	35
117/17	With contact with an immiscible liquid (e.g., lec)	70
117/18	Using a sectioned crucible or providing replenishment of precursor	73
117/30	With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle)	115
117/31	Including a sectioned crucible (e.g., double crucible, baffle)	57
117/33	Replenishing of precursor during growth (e.g., continuous method, zone pulling)	87
117/34	Including significant cooling or heating detail	69
117/32	Using a magnetic field	90
117/54	Liquid phase epitaxial growth (lpe)	110
117/63	Characterized by specified crystallography of the substrate	39
117/62	Electric current controlled or induced growth	14
117/61	Including a sliding boat system	78
117/59	Including a tipping system (e.g., rotation, pivoting)	25
117/60	Including a vertical dipping system	60
117/56	Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)	107
117/57	Including a sliding boat system	65
117/64	Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux)	45
117/65	Having an element in common	13
117/67	Excess component or non-product appearing component contains a metal atom	79
117/66	Excess component or non-product appearing component contains an oxygen atom (e.g., hydrothermal)	40
117/55	With a step of measuring, testing, or sensing	22
117/58	With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)	54
117/4	Processes of growth from solid or gel state (e.g., solid phase recrystallization)	171
117/6	At pressure above 1 atmosphere	28
117/5	Organic product	35
117/7	Using heat (e.g., strain annealing)	142
117/9	Epitaxy formation	153
117/8	Of amorphous precursor	239
117/10	Using temperature gradient (e.g., moving zone recrystallization)	74
117/2	Processes of growth with a subsequent step acting on the crystal to adjust the impurity amount (e.g., diffusing, doping, gettering, implanting)	234
117/3	Processes of growth with a subsequent step of heat treating or deliberate controlled cooling of the single-crystal	324
117/912	Replenishing liquid precursor, other than a moving zone	19
117/911	Seed or rod holders	112
117/915	Separating from substrate	119
117/923	Single-crystal of complex geometry (e.g., patterned, elo) {c30b 29/66}	116
117/928	Single-crystal of pure or intentionally doped element {c30b 29/02}	64
117/929	Carbon (e.g., diamond) {c30b 29/04}	211
117/936	Germanium {c30b 29/08}	107
117/931	Silicon from liquid or supercritical state {c30b 29/06}	69
117/934	By liquid phase epitaxy {c30b 29/06}	33
117/933	By moving zone (not verneuil) {c30b 29/06}	145
117/932	By pulling {c30b 29/06}	412
117/930	Silicon from solid or gel state {c30b 29/06}	78
117/935	Silicon from vapor or gaseous state {c30b 29/06}	223
117/918	Single-crystal waveguide	53
117/919	Organic	18
117/920	Single-crystals having a hollow (e.g., tube, concavo-convex) {c30b 29/66}	22
117/921	Small diameter, elongate, generally cylindrical single-crystal (e.g., whiskers, needles, filaments, fibers, wires) {c30b 29/62}	58
117/906	Special atmosphere other than vacuum or inert	85
117/907	Refluxing atmosphere	18
117/902	Specified orientation, shape, crystallography, or size of seed or substrate	186