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Class Information
Number: 117
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor >
Description: (A) GENERAL STATEMENT










Class Number Class Name No. of Patents
117/900

Apparatus characterized by composition or treatment thereof (e.g., surface finish, surface coating)

425
117/200

Apparatus

469
117/206

For crystallization from liquid or supercritical state

180
117/207

Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor (e.g., verneuil method)

13
117/219

Having means for producing a moving solid-liquid-solid zone

33
117/221

Havind details of a stabilizing feature

42
117/220

Includin a solid member other than seed or product contacting the liquid (e.g., crucible, immersed heating element)

45
117/222

Including heating or cooling details

142
117/224

Including pressurized crystallization means (e.g., hydrothermal)

50
117/208

Seed pulling

253
117/216

Including a fully-sealed or vacuum-maintained crystallization chamber (e.g., ampoule)

57
117/213

Including a sectioned crucible (e.g., double crucible, baffle)

156
117/218

Including details of means providing product movement (e.g., shaft guides, servo means)

229
117/214

Including details of precursor replenishment

114
117/217

Including heating or cooling details (e.g., shield configuration)

319
117/215

Including sealing means details

31
117/209

Including solid member shaping means other than seed or product (e.g., edfg die)

34
117/211

Including means forming a flat shape (e.g., ribbon)

69
117/212

Pulling includes a horizontal component

30
117/210

Means for forming a hollow structure (e.g., tube, polygon)

33
117/223

Shape defined by a solid member other than seed or product (e.g., bridgman-stockbarger)

102
117/205

For forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)

38
117/201

With means for measuring, testing, or sensing

249
117/203

With a window or port for visual observation or examination

42
117/202

With responsive control means

299
117/204

With means for treating single-crystal (e.g., heat treating)

118
117/914

Crystallization on a continuous moving substrate or cooling surface (e.g., wheel, cylinder, belt)

39
117/903

Dendrite or web or cage technique

28
117/910

Downward pulling

27
117/905

Electron beam

66
117/84

Forming from vapor or gaseous state (e.g., vpe, sublimation)

646
117/87

Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)

108
117/109

Fully-sealed or vacuum-maintained chamber (e.g., ampoule)

139
117/105

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

466
117/108

Using an energy beam or field, a particle beam or field, or a plasma (e.g., mbe)

400
117/85

With a step of measuring, testing, or sensing

146
117/86

With responsive control

225
117/88

With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd)

460
117/101

Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, miller index)

319
117/89

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

722
117/92

Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser)

261
117/91

With a chemical reaction (except ionization) in a disparate zone to form a precursor

104
117/90

With pretreatment of substrate (e.g., coacting ablating)

313
117/93

With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

269
117/103

Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser)

310
117/104

Using an organic precursor (e.g., propane, metal-organic, mocvd, movpe)

457
117/99

With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)

166
117/100

Fully-sealed or vacuum-maintained chamber (e.g., ampoule)

45
117/98

With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)

95
117/94

With pretreatment or preparation of a base (e.g., annealing)

359
117/95

Coating (e.g., masking, implanting)

506
117/96

For autodoping control

94
117/97

Material removal (e.g., etching, cleaning, polishing)

304
117/102

With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

329
117/107

With movement of substrate or vapor or gas supply means during growth

84
117/106

With pretreatment or preparation of a base (e.g., annealing)

280
117/922

Free-standing, flat single-crystal (e.g., platelet, plate, strip, disk, tape, sheet, ribbon) {c30b 29/64}

95
117/913

Graphoepitaxy or surface modification to enhance epitaxy

80
117/924

Homogeneous composition product with enlarged crystals or oriented-crystals (e.g., columnar)

69
117/937

Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10}

93
117/951

Carbide containing (e.g., sic) {c30b 29/36}

200
117/939

Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, sige, insb) {c30b 29/40, 29/52}

160
117/938

Gold, silver, or platinum containing {c30b 29/52}

23
117/940

Halide containing (e.g., fluorphlogopite, fluor-mica) {c30b 29/12}

123
117/952

Nitride containing (e.g., gan, cbn) {c30b 29/38}

323
117/944

Oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16}

179
117/950

Aluminum containing (e.g., al2o3, ruby, corundum, sapphire, chrysoberyl) {c30b 29/20}

111
117/947

Containg ameo3 ((a2o3):(me2o3)), wherein a is trivalent and selected from the group sc, y, la, hf, or a rare earth metal and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., perovskite structure, ortho-ferrites) {c30b29/24}

52
117/945

Containing a3me5o12 (1.5(a2o3):2.5(me2o3)), wherein a is trivalent and selected from the group sc, y, la, hf, or a rare earth metal and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., non-silicate garnets) {c30b 29/28}

103
117/946

Containing ame2o4 (ao:(me2o3)), wherein a is divalent and selected from the group mg, ni, co, mn, zn, or cd and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., spinels) {c30b 29/26}

41
117/948

Niobate, vanadate, or tantalate containing {c30b 29/30}

93
117/949

Titanate, germanate, molybdate, or tungstate containing {c30b 29/32}

55
117/941

Phosphorus-oxygen bond containing (e.g., phosphate (po4)) {c30b 29/14}

44
117/942

Silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {c30b 29/16}

36
117/943

Quartz (sio2) {c30b 29/18}

21
117/953

{b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40}

283
117/954

Gallium arsenide containing (e.g., gaalas, gaas) {c30b 29/42}

485
117/955

Gallium phosphide containing {c30b 29/44}

149
117/956

{zn,cd,hg}{s,se,te} compound containing {c30b 29/46}

156
117/958

Cadmium sulfide containing (e.g., zncds) {c30b 29/50}

35
117/957

Cdhgte containing {c30b 29/48}

97
117/904

Laser beam

208
117/901

Levitation, reduced gravity, microgravity, space

66
117/917

Magnetic

87
117/925

Organic compound containing single-crystal {c30b 29/54}

84
117/927

Macromolecular compound containing (i.e., more than about 100 atoms) {c30b 29/58}

88
117/926

Tartrate containing (e.g., rochelle salt) {c30b 29/56}

20
117/916

Oxygen testing

17
117/1

Processes joining independent crystals

94
117/11

Processes of growth from liquid or supercritical state

169
117/12

Crucibleless process having movement of discrete droplets or solid particles to thin-film precursor (e.g., verneuil method)

28
117/53

Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth)

27
117/73

Havin growth from molten state (e.g., solution melt)

163
117/75

Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., vls method)

94
117/77

Gas or vapor state precursor or overpressure

68
117/81

Growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method)

239
117/83

Having bottom-up crystallization (e.g., vfg, vgf)

236
117/82

Including vertical precursor-product interface (e.g., horizontal bridgman)

123
117/74

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

76
117/78

Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux)

77
117/79

Unusable portion contains a metal atom (e.g., diamond or cbn growth in metal solvent)

77
117/80

Unusable portion contains an oxygen atom (e.g., oxide flux)

38
117/76

Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant)

44
117/68

Having growth from a solution comprising a solvent which is liquid at or below 20 degrees celsius (e.g., aqueous solution)

313
117/71

At pressure above 1 atmosphere (e.g., hydrothermal processes)

84
117/72

Quartz (sio2) product

41
117/70

Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis)

164
117/69

With a step of measuring, testing, or sensing

133
117/37

Having moving solid-liquid-solid region

47
117/43

Distinctly layered product (e.g., twin, soi, epitaxial crystallization)

135
117/44

Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser)

77
117/45

Non-planar crystal grown (e.g., elo)

73
117/47

Flat, free-standing (i.e., substrate-free) product (e.g., ribbon, film, sheet)

44
117/38

Including a step of measuring, testing, or sensing

18
117/39

With responsive control

24
117/40

Liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration)

84
117/49

Liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone)

43
117/50

Liquefying by energy from an electromagnetic wave or electromagnetic particle or arc or plasma (e.g., radiant heat)

47
117/51

Electromagnetic induction

33
117/52

With liquid control (e.g., vibration damping, stabilizing, melt levitation focusing coil)

23
117/46

Movement includes a horizontal component

37
117/41

Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux)

33
117/42

Product has an element in common with the unusable residual portion

21
117/48

Solid heating means contacting the liquid (e.g., immersed)

14
117/13

Having pulling during growth (e.g., czochralski method, zone drawing)

622
117/19

Forming an intended mixture (excluding mixed crystal) (e.g., doped)

187
117/21

Comprising a semiconductor with a charge carrier impurity

85
117/22

Forming adjoining crystals of different compositions (e.g., junction)

15
117/20

Comprising a silicon crystal with oxygen containing impurity

236
117/28

Including non-coincident axes of rotation (e.g., relative eccentric)

21
117/29

Passing non-induced electric current through a crystal-liquid interface (e.g., peltier)

29
117/36

Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier)

55
117/23

Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method)

62
117/26

Defines a flat product

63
117/27

Pulling includes a horizontal component

39
117/25

Defines a product with a hollow structure (e.g., tube)

33
117/24

Embedded in product (e.g., string-stabilized web)

31
117/35

With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed)

147
117/14

With a step of measuring, testing, or sensing (e.g., using tv, photo, or x-ray detector or weight changes)

223
117/15

With responsive control

255
117/16

Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method)

50
117/17

With contact with an immiscible liquid (e.g., lec)

79
117/18

Using a sectioned crucible or providing replenishment of precursor

98
117/30

With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle)

152
117/31

Including a sectioned crucible (e.g., double crucible, baffle)

71
117/33

Replenishing of precursor during growth (e.g., continuous method, zone pulling)

112
117/34

Including significant cooling or heating detail

86
117/32

Using a magnetic field

114
117/54

Liquid phase epitaxial growth (lpe)

143
117/63

Characterized by specified crystallography of the substrate

52
117/62

Electric current controlled or induced growth

14
117/61

Including a sliding boat system

80
117/59

Including a tipping system (e.g., rotation, pivoting)

28
117/60

Including a vertical dipping system

64
117/56

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

117
117/57

Including a sliding boat system

67
117/64

Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux)

60
117/65

Having an element in common

17
117/67

Excess component or non-product appearing component contains a metal atom

83
117/66

Excess component or non-product appearing component contains an oxygen atom (e.g., hydrothermal)

41
117/55

With a step of measuring, testing, or sensing

25
117/58

With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)

63
117/4

Processes of growth from solid or gel state (e.g., solid phase recrystallization)

231
117/6

At pressure above 1 atmosphere

34
117/5

Organic product

51
117/7

Using heat (e.g., strain annealing)

167
117/9

Epitaxy formation

205
117/8

Of amorphous precursor

292
117/10

Using temperature gradient (e.g., moving zone recrystallization)

83
117/2

Processes of growth with a subsequent step acting on the crystal to adjust the impurity amount (e.g., diffusing, doping, gettering, implanting)

287
117/3

Processes of growth with a subsequent step of heat treating or deliberate controlled cooling of the single-crystal

384
117/912

Replenishing liquid precursor, other than a moving zone

21
117/911

Seed or rod holders

115
117/915

Separating from substrate

132
117/923

Single-crystal of complex geometry (e.g., patterned, elo) {c30b 29/66}

118
117/928

Single-crystal of pure or intentionally doped element {c30b 29/02}

72
117/929

Carbon (e.g., diamond) {c30b 29/04}

249
117/936

Germanium {c30b 29/08}

109
117/931

Silicon from liquid or supercritical state {c30b 29/06}

76
117/934

By liquid phase epitaxy {c30b 29/06}

35
117/933

By moving zone (not verneuil) {c30b 29/06}

148
117/932

By pulling {c30b 29/06}

435
117/930

Silicon from solid or gel state {c30b 29/06}

80
117/935

Silicon from vapor or gaseous state {c30b 29/06}

231
117/918

Single-crystal waveguide

54
117/919

Organic

18
117/920

Single-crystals having a hollow (e.g., tube, concavo-convex) {c30b 29/66}

26
117/921

Small diameter, elongate, generally cylindrical single-crystal (e.g., whiskers, needles, filaments, fibers, wires) {c30b 29/62}

69
117/906

Special atmosphere other than vacuum or inert

87
117/907

Refluxing atmosphere

18
117/902

Specified orientation, shape, crystallography, or size of seed or substrate

198
 
 
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