| Patent Number |
Title Of Patent |
Date Issued |
| 7301745 |
Temperature dependent switching circuit |
November 27, 2007 |
| A temperature dependent switching circuit comprises a first transistor with a threshold voltage Vth having a negative temperature coefficient. A diode having a forward voltage drop with a negative temperature coefficient coupled with its anode connected to the drain of the first tran |
| 7279880 |
Temperature independent low voltage reference circuit |
October 9, 2007 |
| A temperature independent low voltage reference circuit comprises a first transistor with a threshold voltage Vth having a negative temperature coefficient. A diode having a forward voltage drop with a negative temperature coefficient coupled with its anode connected to the drain of |
| 7245174 |
Analogue switch |
July 17, 2007 |
| A switching circuit (20) comprising first and second switch terminals (2,3) and a switch (21). The switch (21) comprises a first bipolar transistor (22), having a collector connected to the first switch terminal (2) and an emitter connected to the second switch terminal (3), and a se |
| 6802719 |
Implantation method |
October 12, 2004 |
| A method for implanting ions into a surface of a semiconductor structure covered by a layer of insulating material, for example into a trench wall covered by a layer of oxide. A beam of ions is directed at a glancing angle to the layer of insulating material such that a substantial p |
| 6778366 |
Current limiting protection circuit |
August 17, 2004 |
| A current-limit circuit comprising a control transistor coupled to a power transistor in a current mirror configuration. A switch transistor is operatively coupled between the output of the power transistor and the control transistor to selectively activate the control transistor in |
| 6703664 |
Power FET device |
March 9, 2004 |
| A power FET device includes a semiconductor wafer substrate having first and second surfaces, a gate electrode extending over the first surface of the substrate but insulated therefrom, and a drain electrode extending over the second surface of the substrate. The gate electrode defines a |
| 6649539 |
Semiconductor contact fabrication method |
November 18, 2003 |
| A method for reducing damage to a semiconductor structure resulting from migration of constituents of a first component part (3) of the structure into a subsequently deposited second component part (8) of the structure which makes contact with a surface of the first component part (3). A |
| 6509607 |
Semiconductor device with reduced source diffusion distance and method of making same |
January 21, 2003 |
| A semiconductor device comprising a drain region, a body region overlying the drain region and defining an upper surface, source regions extending from adjacent the upper surface of the body region towards the drain region, and a series of indentations extending into and through the body |
| 6376314 |
Method of semiconductor device fabrication |
April 23, 2002 |
| A method of semiconductor device fabrication comprising forming at least the indentation in a surface of a semiconductor body. The indentation is partially filled with a filler material such that walls of the indentation are exposed above an upper surface of the filler material. First an |
