| Patent Number |
Title Of Patent |
Date Issued |
| 7385236 |
BiFET semiconductor device having vertically integrated FET and HBT |
June 10, 2008 |
| The invention provides a BiFET semiconductor device vertically integrating a FET and a HBT on the same substrate. The BiFET semiconductor device comprises a HBT structure, a high-resistivity structure, and a FET structure, sequentially formed in this order from bottom to top on a sem |
| 7384808 |
Fabrication method of high-brightness light emitting diode having reflective layer |
June 10, 2008 |
| A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer f |
| 7335924 |
High-brightness light emitting diode having reflective layer |
February 26, 2008 |
| An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal or a metal nitride |
| 7224005 |
Heterojunction bipolar transistor structure |
May 29, 2007 |
| A material made by arranging layers of gallium-arsenide-antimonide (GaAs.sub.xSb.sub.1-x, 0.0.ltoreq.x.ltoreq.1.0) and/or indium-gallium-arsenic-nitride (In.sub.yGa.sub.1-yAs.sub.zN.sub.1-z, 0.0.ltoreq.y, z.ltoreq.1.0) in a specific order is used to form the transistor base of a hete |
| 6287882 |
Light emitting diode with a metal-coated reflective permanent substrate and the method for manuf |
September 11, 2001 |
| A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a metal-coated reflective permanent substrate and then removing the temporary substrate. The reflective metal layer also serves as a bonding agent for bonding |
| 6258699 |
Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for |
July 10, 2001 |
| A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a transparent substrate of glass or quartz to the light emitting region and then removing the temporary substrate. A metal bonding agent also serving as an |
| 6100544 |
Light-emitting diode having a layer of AlGaInP graded composition |
August 8, 2000 |
| A light emitting diode includes a double hetero structure containing an upper cladding layer with a graded composition. The light emitting diode comprises a GaAs substrate, a first ohmic contact to the substrate, an AlGaInP lower cladding layer formed on the GaAs substrate, an AlGaInP |
| 6064076 |
Light-emitting diode having a transparent substrate |
May 16, 2000 |
| A light-emitting diode having a transparent substrate contains a transparent GaP substrate having a first lattice constant, a first ohmic contact to the GaP substrate, a buffer layer having a graded lattice constant which gradually changes from a first lattice constant to a second la |
