| Patent Number |
Title Of Patent |
Date Issued |
| 7381650 |
Method and apparatus for process control in time division multiplexed (TDM) etch processes |
June 3, 2008 |
| The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure |
| 7115520 |
Method and apparatus for process control in time division multiplexed (TDM) etch process |
October 3, 2006 |
| The present invention provides a method for controlling pressure in a vacuum chamber during a time division multiplexed process. A throttle valve is pre-positioned and held for a predetermined period of time. A process gas is introduced into the vacuum chamber during the associated p |
| 7101805 |
Envelope follower end point detection in time division multiplexed processes |
September 5, 2006 |
| The present invention provides a method and an apparatus for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a plasma chamber and subjected to an alternating cyclical process having an etching step and a |
| 7008877 |
Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias |
March 7, 2006 |
| The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the v |
| 6982175 |
End point detection in time division multiplexed etch processes |
January 3, 2006 |
| An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during th |
| 6924235 |
Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
August 2, 2005 |
| An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas supplies are switch |
| 6905626 |
Notch-free etching of high aspect SOI structures using alternating deposition and etching and pu |
June 14, 2005 |
| A method of preventing notching during a cyclical etching and deposition of a substrate with an inductively coupled plasma source is provided by the present invention. In accordance with the method, the inductively coupled plasma source is pulsed to prevent charge build up on the substra |
| 6846747 |
Method for etching vias |
January 25, 2005 |
| An improved method for etching a substrate that reduces the formation of pillars is provided by the present invention. In accordance with the method, the residence time of an etch gas utilized in the process is decreased and the power of an inductively coupled plasma source used to d |
| 6771482 |
Perimeter seal for backside cooling of substrates |
August 3, 2004 |
| An apparatus, typically a sealing member extending around the periphery of a substrate support or chuck, seals an individual substrate with respect to a substrate support, typically in a processing chamber. The seal is of a corrugated shape, that enhances clamping forces, typically from |
| 6718076 |
Acousto-optic tunable filter with segmented acousto-optic interaction region |
April 6, 2004 |
| An acousto-optic tunable filter that includes a polarization beamsplitter, a multi-segment interaction region and a polarization beam combiner is described. The polarization beamsplitter generates a first and a second polarized optical signal. The multi-segment optical interaction region |
| 6669824 |
Dual-scan thin film processing system |
December 30, 2003 |
| A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux through the |
| 6646753 |
In-situ thickness and refractive index monitoring and control system for thin film deposition |
November 11, 2003 |
| A method of determining thickness and refractive index of an optical thin film is described. The method includes generating a diagnostic light beam having a first and a second wavelength. The method also includes measuring unattenuated light intensities at the first and the second wavele |
| 6605519 |
Method for thin film lift-off processes using lateral extended etching masks and device |
August 12, 2003 |
| A method for forming an etching mask structure on a substrate includes etching the substrate, laterally expanding the etching mask structure, and depositing a self-aligned metal layer that is aligned to the originally masked area. The etching can be isotropic or anisotropic. The self-ali |
| 6547975 |
Magnetic pole fabrication process and device |
April 15, 2003 |
| A method and apparatus for fabricating a submicrometer structure. The method incorporates a sputtering process to deposit an electromagnetic material from a seedlayer onto a vertical sidewall. The vertical sidewall is subsequently removed, leaving a free-standing pole-tip. The resulting |
| 6544696 |
Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask |
April 8, 2003 |
| An embedded attenuated phase shift mask ("EAPSM") includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active |
| 6540928 |
Magnetic pole fabrication process and device |
April 1, 2003 |
| A method and apparatus for fabricating an electroplating mask for the formation of a miniature magnetic pole tip structure. The method incorporates a silylation process to silylate photoresist after creating a photoresist cavity or trench in the electroplating mask. The silylation pr |
| 6495010 |
Differentially-pumped material processing system |
December 17, 2002 |
| A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an ape |
