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ULvac Technologies, Inc. Patents
Assignee:
ULvac Technologies, Inc.
Address:
Methuen, MA
No. of patents:
3
Patents:




Patent Number Title Of Patent Date Issued
5908319 Cleaning and stripping of photoresist from surfaces of semiconductor wafers June 1, 1999
In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.
5882489 Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers March 16, 1999
A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use o
5795831 Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers August 18, 1998
A method for removing a resist layer includes an RIE process and a downstream microwave process, each performed such that the temperature of the wafer is no greater than about 60.degree. C. By performing these processes cold, the resist need not be pre-heated to drive off solvents. T

 
 
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