| Patent Number |
Title Of Patent |
Date Issued |
| 7241675 |
Attachment of integrated circuit structures and other substrates to substrates with vias |
July 10, 2007 |
| Vias (210, 210B) are formed in a surface of a substrate. At least portions of contact pads (139, 350) are located in the vias. Contact pads (150, 340) of an integrated circuit structure are inserted into the vias and attached to the contact pads (139, 350) of the substrate. The vias |
| 7241641 |
Attachment of integrated circuit structures and other substrates to substrates with vias |
July 10, 2007 |
| Vias (210, 210B) are formed in a surface of a substrate. At least portions of contact pads (139, 350) are located in the vias. Contact pads (150, 340) of an integrated circuit structure are inserted into the vias and attached to the contact pads (139, 350) of the substrate. The vias |
| 7186586 |
Integrated circuits and packaging substrates with cavities, and attachment methods including ins |
March 6, 2007 |
| A packaging substrate (310) includes a semiconductor interposer (120) and at least one other intermediate substrate (110), e.g. a BT substrate. The semiconductor interposer has first contact pads (136C) attachable to dies (124) above the interposer, and second contact pads (340) attachab |
| 7179397 |
Plasma processing methods and apparatus |
February 20, 2007 |
| To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first |
| 7173327 |
Clock distribution networks and conductive lines in semiconductor integrated circuits |
February 6, 2007 |
| A clock distribution network (110) is formed on a semiconductor interposer (320) which is a semiconductor integrated circuit. An input terminal (120) of the clock distribution network is formed on one side of the interposer, and output terminals (130) of the clock distribution network |
| 7144056 |
Detection and handling of semiconductor wafers and wafers-like objects |
December 5, 2006 |
| An end-effector includes multiple vortex chucks for supporting a wafer. Vortex chucks are located along the periphery of the end-effector to help prevent a flexible wafer from curling. The end-effector has limiters to restrict the lateral movement of a supported wafer. In one example, th |
| 7104579 |
Detection and handling of semiconductor wafers and wafer-like objects |
September 12, 2006 |
| An end effector has one or more vortex chucks to support a wafer, and at least two detectors for detecting different portions of the wafer before the wafer is picked up. If one of the detectors detects a wafer and the other one does not, an alarm is generated to alert an operator that th |
| 7060601 |
Packaging substrates for integrated circuits and soldering methods |
June 13, 2006 |
| A packaging substrate (310) includes a semiconductor interposer (120) and at least one other intermediate substrate (110), e.g. a BT substrate. The semiconductor interposer has first contact pads (136C) attachable to dies (124) above the interposer, and second contact pads (340) attachab |
| 7052229 |
Alignment of semiconductor wafers and other articles |
May 30, 2006 |
| A wafer or some other article is aligned while being held by an end-effector. |
| 7049170 |
Integrated circuits and packaging substrates with cavities, and attachment methods including ins |
May 23, 2006 |
| A packaging substrate (310) includes a semiconductor interposer (120) and at least one other intermediate substrate (110), e.g. a BT substrate. The semiconductor interposer has first contact pads (136C) attachable to dies (124) above the interposer, and second contact pads (340) attachab |
| 7034401 |
Packaging substrates for integrated circuits and soldering methods |
April 25, 2006 |
| A packaging substrate (310) includes a semiconductor interposer (120) and at least one other intermediate substrate (110), e.g. a BT substrate. The semiconductor interposer has first contact pads (136C) attachable to dies (124) above the interposer, and second contact pads (340) attachab |
| 7027894 |
Article holders with sensors detecting a type of article held by the holder |
April 11, 2006 |
| An article holder has sensors that detect whether an article held in the holder is a workpiece or a piece of packaging material. Examples are end effectors suitable for picking up semiconductor wafers and packaging material from a pod or some other carrier. |
| 7001825 |
Semiconductor structures having multiple conductive layers in an opening, and methods for fabric |
February 21, 2006 |
| In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive la |
| 6958285 |
Methods of manufacturing devices having substrates with opening passing through the substrates a |
October 25, 2005 |
| In some embodiments, a fabrication method comprises: forming a structure that has one or more substrates, wherein the one or more substrates are either a single substrate or a plurality of substrates bonded together, wherein the structure comprises a non-electronically-functioning compon |
| 6948898 |
Alignment of semiconductor wafers and other articles |
September 27, 2005 |
| A wafer or some other article is aligned while being held by an end-effector. |
| 6935830 |
Alignment of semiconductor wafers and other articles |
August 30, 2005 |
| A wafer or some other article is aligned while being held by an end-effector. |
| 6899788 |
Article holders that use gas vortices to hold an article in a desired position |
May 31, 2005 |
| An article (e.g. a semiconductor wafer) is held in an article holder by means of a number of gas flows emitted from gas vortex chambers. Some of the gas flows act to cool an adjacent article portion more than the other gas flows. For example, some of the vortex chambers emit more gas per |
| 6897148 |
Electroplating and electroless plating of conductive materials into openings, and structures obt |
May 24, 2005 |
| A through hole (114) is formed in a wafer (104) comprising a semiconductor substrate (110). A seed layer (610) is sputtered on the bottom surface of the wafer. The seed is not deposited over the through hole's sidewalls adjacent the top surface of the wafer. A conductor (810) is electrop |
| 6882030 |
Integrated circuit structures with a conductor formed in a through hole in a semiconductor subst |
April 19, 2005 |
| To fabricate contacts on a wafer backside, openings (124) are formed in the face side of the wafer (104). A dielectric layer (140) and some contact material (150), e.g. metal, are deposited into the openings. Then the backside is etched until the contacts (150C) are exposed and protrude |
| 6844241 |
Fabrication of semiconductor structures having multiple conductive layers in an opening |
January 18, 2005 |
| In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive la |
| 6787916 |
Structures having a substrate with a cavity and having an integrated circuit bonded to a contact |
September 7, 2004 |
| Semiconductor dies are bonded to contact pads formed in a substrate's cavity. Vias through the substrate open into the cavity. Conductive lines passing through the vias connect the contact pads in the cavity to contact pads on another side of the substrate. A passage in the substrate ope |
| 6759341 |
Wafering method comprising a plasma etch with a gas emitting wafer holder |
July 6, 2004 |
| To reduce the edge roll off in a semiconductor wafering process, the wafer (110) is subject to a plasma etch with an edge underetch. The edge underetch is achieved by means of a wafer holder (410) that emits gas towards the wafer (e.g. a gas vortex) to draw the wafer towards the hold |
| 6753205 |
Method for manufacturing a structure comprising a substrate with a cavity and a semiconductor in |
June 22, 2004 |
| Semiconductor dies are bonded to contact pads formed in a substrate's cavity. Vias through the substrate open into the cavity. Conductive lines passing through the vias connect the contact pads in the cavity to contact pads on another side of the substrate. A passage in the substrate ope |
| 6749764 |
Plasma processing comprising three rotational motions of an article being processed |
June 15, 2004 |
| An article which is being processed with plasma is moved during plasma processing so that the motion of the article comprises at least a first rotational motion, a second rotational motion, and a third rotational motion which occur simultaneously. The apparatus that moves the article |
| 6740582 |
Integrated circuits and methods for their fabrication |
May 25, 2004 |
| To fabricate back side contact pads that are suitable for use in a vertical integrated circuit, vias are made in the face side of a wafer, and dielectric and contact pad metal are deposited into the vias. Then the wafer back side is etched until the metal is exposed. When the etch ex |
| 6730540 |
Clock distribution networks and conductive lines in semiconductor integrated circuits |
May 4, 2004 |
| A clock distribution network (110) is formed on a semiconductor interposer (320) which is a semiconductor integrated circuit. An input terminal (120) of the clock distribution network is formed on one side of the interposer, and output terminals (130) of the clock distribution network ar |
| 6717254 |
Devices having substrates with opening passing through the substrates and conductors in the open |
April 6, 2004 |
| In some embodiments, a fabrication method comprises: forming a structure that has one or more substrates, wherein the one or more substrates are either a single substrate or a plurality of substrates bonded together, wherein the structure comprises a non-electronically-functioning compon |
| 6693361 |
Packaging of integrated circuits and vertical integration |
February 17, 2004 |
| A first level packaging wafer is made of a semiconductor or insulating material. The bumps on the wafer are made using vertical integration technology, without solder or electroplating. More particularly, vias are etched part way into a first surface of the substrate. Metal is deposited |
| 6688662 |
Detection and handling of semiconductor wafers and wafer-like objects |
February 10, 2004 |
| An end-effector includes multiple vortex chucks for supporting a wafer. Vortex chucks are located along the periphery of the end-effector to help prevent a flexible wafer from curling. The end-effector has limiters to restrict the lateral movement of a supported wafer. In one example, th |
| 6667242 |
Brim and gas escape for non-contact wafer holder |
December 23, 2003 |
| The present invention comprises a brim surrounding a wafer or wafer-like object during plasma etching in a non-contact wafer holder, such brim facilitating uniform flow of the plasma discharge around the edge of the wafer during plasma etching. The brim of the present invention avoids |
| 6665583 |
Article holders with sensors detecting a type of article held by the holder |
December 16, 2003 |
| An article holder has sensors that detect whether an article held in the holder is a workpiece or a piece of packaging material. Examples are end effectors suitable for picking up semiconductor wafers and packaging material from a pod or some other carrier. |
| 6638004 |
Article holders and article positioning methods |
October 28, 2003 |
| An article holder has protrusions that contact the article. The friction between the protrusions and the article impedes the article movement relative to the holder yet allows the article to slide when the article is pushed against some object. The article is pushed against the object in |
| 6631935 |
Detection and handling of semiconductor wafer and wafer-like objects |
October 14, 2003 |
| An end-effector includes multiple vortex chucks for supporting a wafer. Vortex chucks are located along the periphery of the end-effector to help prevent a flexible wafer from curling. The end-effector has limiters to restrict the lateral movement of a supported wafer. In one example, th |
| 6627039 |
Plasma processing methods and apparatus |
September 30, 2003 |
| To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis |
| 6615113 |
Articles holders with sensors detecting a type of article held by the holder |
September 2, 2003 |
| An article holder has sensors that detect whether an article held in the holder is a workpiece or a piece of packaging material. Examples are end effectors suitable for picking up semiconductor wafers and packaging material from a pod or some other carrier. |
| 6541729 |
Monitoring and controlling separate plasma jets to achieve desired properties in a combined stre |
April 1, 2003 |
| A plasma apparatus separately measures multiple plasma jets upstream of where the plasma jets converge into a combined plasma stream. The separate plasma jets can be separately adjusted to place the separate jets in a configuration that provides the combined stream with desired propertie |
| 6498381 |
Semiconductor structures having multiple conductive layers in an opening, and methods for fabric |
December 24, 2002 |
| In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive la |
| 6498074 |
Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips wi |
December 24, 2002 |
| A semiconductor wafer is diced before thinning. The wafer is diced only part of the way through, to form grooves which are at least as deep as the final thickness of each chip to be obtained from the wafer. Then the wafer backside is etched with a dry etch, for example, atmospheric press |
| 6462300 |
Monitoring and controlling separate plasma jets to achieve desired properties in a combined stre |
October 8, 2002 |
| A plasma apparatus separately measures multiple plasma jets upstream of where the plasma jets converge into a combined plasma stream. The separate plasma jets can be separately adjusted to place the separate jets in a configuration that provides the combined stream with desired propertie |
| 6448188 |
Method of preventing motion of article in an article holder |
September 10, 2002 |
| The present invention comprises a dynamic brake that applies restraining frictional force to a wafer in a wafer holder while the wafer holder is substantially at rest, but releases the restraining force as the processing carousel containing several wafer holders rotates about a centr |
| 6448153 |
Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips wi |
September 10, 2002 |
| A semiconductor wafer is diced before thinning. The wafer is diced only part of the way through, to form grooves which are at least as deep as the final thickness of each chip to be obtained from the wafer. Then, the wafer is placed into a non-contact wafer holder, and the wafer backside |
| 6427991 |
Non-contact workpiece holder using vortex chuck with central gas flow |
August 6, 2002 |
| A non-contact holder including one or more chucks holds a planar workpiece such as a semiconductor wafer, particularly a thin wafer. Each chuck in the holder includes a cavity that opens to a surface adjacent to the workpiece. A tangential orifice introduces a tangential gas flow into th |
| 6423923 |
Monitoring and controlling separate plasma jets to achieve desired properties in a combined stre |
July 23, 2002 |
| A plasma apparatus separately measures multiple plasma jets upstream of where the plasma jets converge into a combined plasma stream. The separate plasma jets can be separately adjusted to place the separate jets in a configuration that provides the combined stream with desired propertie |
| 6420209 |
Integrated circuits and methods for their fabrication |
July 16, 2002 |
| To fabricate back side contact pads that are suitable for use in a vertical integrated circuit, vias are made in the face side of a wafer, and dielectric and contact pad metal are deposited into the vias. Then the wafer back side is etched until the metal is exposed. When the etch ex |
| 6398823 |
Dynamic break for non-contact wafer holder |
June 4, 2002 |
| The present invention comprises a dynamic brake that applies restraining frictional force to a wafer in a wafer holder while the wafer holder is substantially at rest, but releases the restraining force as the processing carousel containing several wafer holders rotates about a centr |
| 6323134 |
Plasma processing methods and apparatus |
November 27, 2001 |
| To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis |
| 6322903 |
Package of integrated circuits and vertical integration |
November 27, 2001 |
| A first level packaging wafer is made of a semiconductor or insulating material. The bumps on the wafer are made using vertical integration technology, without solder or electroplating. More particularly, vias are etched part way into a first surface of the substrate. Metal is deposited |
| 6287976 |
Plasma processing methods and apparatus |
September 11, 2001 |
| To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive, so that the article enters the plasma at different angles for different positions of the first axis. The |
| 6261375 |
Plasma processing methods and apparatus |
July 17, 2001 |
| To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive, so that the article enters the plasma at different angles for different positions of the first axis. The |
