| Patent Number |
Title Of Patent |
Date Issued |
| 7384481 |
Method of forming a rare-earth dielectric layer |
June 10, 2008 |
| Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming |
| 7351993 |
Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
April 1, 2008 |
| Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or german |
| 7273657 |
Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
September 25, 2007 |
| Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or german |
| 7211821 |
Devices with optical gain in silicon |
May 1, 2007 |
| A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion. |
| 7199015 |
Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
April 3, 2007 |
| Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or german |
| 7135699 |
Method and apparatus for growth of single-crystal rare-earth oxides, nitrides, and phosphides |
November 14, 2006 |
| Structure and method for growing crystalline superlattice rare earth oxides, rare earth nitrides and rare earth phosphides and ternary rare-earth compounds are disclosed. The structure includes a superlattice having a plurality of layers that forming a plurality of repeating units. A |
| 6858864 |
Devices with optical gain in silicon |
February 22, 2005 |
| A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion. |
| 6734453 |
Devices with optical gain in silicon |
May 11, 2004 |
| A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion. |
