| Patent Number |
Title Of Patent |
Date Issued |
| 7416959 |
Silicon-on-insulator semiconductor wafer |
August 26, 2008 |
| A method of fabricating a semiconductor-on-insulator semiconductor substrate is disclosed that includes providing first and second semiconductor substrates. Either oxygen or nitrogen is introduced into a region adjacent the surface of the first semiconductor substrate and a rare eart |
| 7365357 |
Strain inducing multi-layer cap |
April 29, 2008 |
| A strained transistor includes a silicon transistor, an encapsulating layer of silicon insulating material with an outer surface, and a stress inducing multilayer cap deposited on the outer surface of the encapsulating layer with at least two layers including a layer of rare earth ox |
| 7364974 |
Double gate FET and fabrication process |
April 29, 2008 |
| A method of fabricating a double gate FET on a silicon substrate includes the steps of sequentially epitaxially growing a lower gate layer of crystalline rare earth silicide material on the substrate, a lower gate insulating layer of crystalline rare earth insulating material, an active |
| 7323396 |
Signal and/or ground planes with double buried insulator layers and fabrication process |
January 29, 2008 |
| The present invention describes a method including the steps of providing a single crystal semiconductor substrate, forming a layer of rare earth silicide on a surface of the semiconductor substrate, forming a first layer of insulating material on the layer of rare earth silicide, formin |
| 7253080 |
Silicon-on-insulator semiconductor wafer |
August 7, 2007 |
| A method of fabricating a semiconductor-on-insulator semiconductor substrate is disclosed that includes providing first and second semiconductor substrates. Either oxygen or nitrogen is introduced into a region adjacent the surface of the first semiconductor substrate and a rare eart |
| 7217636 |
Semiconductor-on-insulator silicon wafer |
May 15, 2007 |
| A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second semiconductor substrates. A first insulating layer is formed on the first substrate with a first predetermined stress and a second insulating layer is formed |
| 7037806 |
Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rar |
May 2, 2006 |
| A method of fabricating a semiconductor-on-insulator semiconductor substrate is disclosed that includes providing first and second semiconductor substrates. Either oxygen or nitrogen is introduced into a region adjacent the surface of the first semiconductor substrate and a rare eart |
| 7023011 |
Devices with optical gain in silicon |
April 4, 2006 |
| A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion. |
| 7018484 |
Semiconductor-on-insulator silicon wafer and method of formation |
March 28, 2006 |
| A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second silicon substrates. A first thin layer of silicon dioxide is formed on one substrate and a second thicker layer of silicon dioxide is formed on the other substra |
