| Patent Number |
Title Of Patent |
Date Issued |
| 7276125 |
Barrel type susceptor |
October 2, 2007 |
| The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wa |
| 7255775 |
Semiconductor wafer treatment member |
August 14, 2007 |
| There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has a |
| 7250357 |
Manufacturing method for strained silicon wafer |
July 31, 2007 |
| A manufacturing method for producing a stained silicon wafer has the steps of forming an Si.sub.1-xGe.sub.x composition-graded layer of which Ge concentration is stepwisely increased on a single crystal silicon substrate, forming an Si.sub.1-xGe.sub.x uniform composition layer of whi |
| 7247583 |
Manufacturing method for strained silicon wafer |
July 24, 2007 |
| A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased stepwisely from 5 to 60% a |
| 7226513 |
Silicon wafer cleaning method |
June 5, 2007 |
| This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/.mu.m is 0.3 to 1.5 nm.sup.3 in terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water |
| 7193294 |
Semiconductor substrate comprising a support substrate which comprises a gettering site |
March 20, 2007 |
| A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon |
| 7175911 |
Titanium dioxide fine particles and method for producing the same, and method for producing visi |
February 13, 2007 |
| The invention provides titanium dioxide fine particles, wherein nitrogen and at least one element selected from carbon, hydrogen, sulfur doped in titanium dioxide by heat-treating fine particles of a material of titanium dioxide at 500.degree. C. or more and 600.degree. C. or less in |
| 7149341 |
Wafer inspection apparatus |
December 12, 2006 |
| A wafer inspection apparatus has a supporting means (10) for rotatably supporting a wafer (W) formed of a disk, a circumferential edge imaging means (40) for imaging a circumferential edge (S) of the wafer (W) that is supported by the supporting means for rotation, a notch imaging means |
| 7090932 |
Plasma resistant member |
August 15, 2006 |
| A plasma resistant member has a base material and a coating layer made of an Y.sub.2O.sub.3, the coating layer being formed on a surface of the base material. The coating layer has a thickness of 10 .mu.m or more and the Y.sub.2O.sub.3 of the coating layer contains solid solution Si |
| 7083677 |
Silicon seed crystal and method for manufacturing silicon single crystal |
August 1, 2006 |
| Using a seed crystal comprising a silicon single crystal not including a vacancy excess region, a neck comprising a silicon single crystal not including a vacancy excess region is grown with a diameter contracted smaller than, or equal to that of the contact surface of the silicon seed |
| 7082789 |
Silica glass member for semiconductor and production method thereof |
August 1, 2006 |
| A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 10.sup.13.0 poise or more at 1200.degree. C. is provided as a silica glass member for semiconducto |
| 7077905 |
Apparatus for pulling a single crystal |
July 18, 2006 |
| An apparatus for pulling the single crystal has a radiation shield. The apparatus can improve the ratio of single crystallization, even if the radiation shield is made of graphite base material and covered with silicon carbide. The apparatus can be manufactured by low cost and can im |
| 7072578 |
Carbon wire heating object sealing heater and fluid heating apparatus using the same heater |
July 4, 2006 |
| A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2.times.10.sup.-3 g/cm.sup.3 or less. |
| 7060597 |
Manufacturing method for a silicon substrate having strained layer |
June 13, 2006 |
| A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 .mu.m or more between the plurality of |
| 7048796 |
Silicon single crystal wafer fabricating method and silicon single crystal wafer |
May 23, 2006 |
| At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking |
| 6976908 |
Polishing head and polishing apparatus |
December 20, 2005 |
| A polishing head includes a head body, a first recessed portion formed in the lower surface of the head body, a support plate which can be moved up and down in the first recessed portion, a first film-like member in which a first space is formed between the upper surface of the support p |
| 6961516 |
Steam generator and mixer using the same |
November 1, 2005 |
| A steam generating apparatus includes: a liquid tank portion 1 for storing a liquid; an evaporator portion 2 which is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam storage portion 3 which is directly |
| 6936490 |
Semiconductor wafer and its manufacturing method |
August 30, 2005 |
| A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or |
| 6933254 |
Plasma-resistant articles and production method thereof |
August 23, 2005 |
| A plasma-resistant article is provided in which a surface region of the article to be exposed to plasma in a corrosive atmosphere is formed from a zirconia-based ceramic that contains yttria in an amount of 7 to 17 mol %. The plasma-resistant article exhibits a sufficient resistance agai |
| 6885814 |
Carbon wire heating object sealing heater and fluid heating apparatus using the same heater |
April 26, 2005 |
| A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2.times.10.sup.-3 g/cm.sup.3 or less. |
| 6861122 |
Ceramic member with fine protrusions on surface and method of producing the same |
March 1, 2005 |
| The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 w |
| 6841273 |
Silicon/silicon carbide composite and process for manufacturing the same |
January 11, 2005 |
| The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer |
| 6838405 |
Plasma-resistant member for semiconductor manufacturing apparatus and method for manufacturing t |
January 4, 2005 |
| A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 .mu.m from surface in a plasma-resistant |
| 6834613 |
Plasma-resistant member and plasma treatment apparatus using the same |
December 28, 2004 |
| A plasma-resistant member used in a reaction chamber of a plasma treating apparatus is formed of a dense alumina sintered product having an average grain size of 18-45 .mu.m, a surface roughness Ra of 0.8-3.0 .mu.m and a bulk density of 3.90 g/cm.sup.3 or over. |
| 6821916 |
Ceramics for in vivo use |
November 23, 2004 |
| The invention is intended to introduce cells easily into a ceramics for in vivo use. Also, the invention provides a ceramics for in vivo use which has a good affinity to a living body and no harmful action on a living body. The invention relates to a porous ceramics having many almost |
| 6734960 |
Wafer defect measuring method and apparatus |
May 11, 2004 |
| The depth and a relative dimensional factor of a defect present in the interior of a silicon wafer are measured, and the number of such defects is calculated. A laser beam having a larger energy than the band gap of silicon is radiated obliquely to the semiconductor wafer and a scattered |
| 6713420 |
Porous ceramics body for in vivo or in vitro use |
March 30, 2004 |
| A porous ceramics body for in vivo or in vitro 1use in which a number of pores are closely distributed in three dimensional directions, adjoining pores thereof being partitioned by wall portions with respective communication ports to bring said adjoining pores into communication with |
| 6699401 |
Method for manufacturing Si-SiC member for semiconductor heat treatment |
March 2, 2004 |
| A method for producing a Si--SiC member for heat treatment of semiconductor, which is suitable for heat treatment of a semiconductor wafer with a large diameter and capable of reducing the contamination of the semiconductor wafer as much as possible is provided. Further, a method for |
| 6668662 |
Viscoelasticity measuring device |
December 30, 2003 |
| The invention provides a viscoelasticity measuring device which is capable of imparting a desired displacement profile to a sample under conditions close to that of actual use. The viscoelasticity measuring device is composed of a presser to impart displacements to a sample; a rod to con |
| 6652934 |
Silica glass crucible and method of fabricating thereof |
November 25, 2003 |
| A silica glass crucible 1 having .alpha. of 0.05 or less over a thickness of 0.5 mm or more from the inner surface of the silica glass crucible, .alpha. being obtained by dividing the fluorescent intensity integrated over a wavelength range of 4,000 cm.sup.-1 and 4,100 cm.sup.-1 by the |
| 6637629 |
Immersion nozzle |
October 28, 2003 |
| The invention presents an immersion nozzle having corrosion resistance to steel of high oxygen content or type of steel treated with calcium, and capable of preventing adheres and deposits of molten steel and oxide inclusions on the nozzle inner wall, in which at least a part of its |
| 6584279 |
Heater sealed with carbon wire heating element |
June 24, 2003 |
| A heater sealed with carbon wire heating element has a carbon wire heating element sealed with a quartz glass member, the carbon wire being prepared by knitting carbon single fibers into a knitted cord of a braid, each wire having a crystal structure with a interlayer spacing d (002) the |
| 6565650 |
Single crystal pulling apparatus and pulling method |
May 20, 2003 |
| A single crystal pulling apparatus comprising, a laser unit 46 emitting a beam with a wavelength of 550 nm or less to form a spot on the surface of said melt, a spot camera 47 capturing the spot to produce electrical image signals corresponding thereto, an image processor 50 processing t |
| 6537924 |
Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate |
March 25, 2003 |
| A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon |
| 6517632 |
Method of fabricating a single crystal ingot and method of fabricating a silicon wafer |
February 11, 2003 |
| A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid 7 in which nitrogen N and |
| 6517422 |
Polishing apparatus and method thereof |
February 11, 2003 |
| A polishing apparatus which attaches the semi-conductor wafers 5 to the polishing plate 4 for performing the polishing as applying pressure the polishing cloth with the semi-conductor wafers, is provided with a guide ring 7 disposed outside of the polishing plate for pressing the polishi |
| 6516143 |
Fluid heating apparatus |
February 4, 2003 |
| The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an ou |
| 6515297 |
CVD-SiC self-supporting membrane structure and method for manufacturing the same |
February 4, 2003 |
| The present invention provides a CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r=.beta.(220)/.beta.(111) of .beta. (220) peak to .beta. (111) peak intensities of the X-ray |
| 6515264 |
Heater |
February 4, 2003 |
| A rod-shaped heater provided is composed of a carbon wire heating element 2 sealed in a small or large diameter quartz glass tube, a small diameter quartz glass tube portions 3a and 3b charged with compressed wire carbon members at opposite ends thereof; a sealed terminal section 10 havi |
| 6492042 |
Ceramics material and producing the same |
December 10, 2002 |
| The invention is a method of producing a ceramics material comprising the steps of: preparing a raw powder in which alumina particles having an average particle diameter of 0.1-1.0 .mu.are doped with at least magnesia of 0.01-1 weight % and a solution containing yttrium of 0.1-15 weight |
| 6485573 |
Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus |
November 26, 2002 |
| An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie |
| 6461428 |
Method and apparatus for controlling rise and fall of temperature in semiconductor substrates |
October 8, 2002 |
| A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor sub |
| 6407371 |
Heater |
June 18, 2002 |
| A rod-shaped heater provided is composed of a carbon wire heating element 2 sealed in a small or large diameter quartz glass tube, a small diameter quartz glass tube portions 3a and 3b charged with compressed wire carbon members at opposite ends thereof; a sealed terminal section 10 havi |
| 6363098 |
Carbon electrode for melting quartz glass and method of fabricating thereof |
March 26, 2002 |
| The invention is to offer such a carbon electrode of less consumption and a long useful life and a method of fabricating the same which prevents particles from falling from carbon electrodes into a melting quartz glass, checks occurrence of bubbles in the quartz glass, and avoids lowerin |
| 6340648 |
Calcium phosphate porous sintered body and production thereof |
January 22, 2002 |
| A calcium phosphate porous sintered body which comprises spherical pores communicating with one another substantially throughout the body with a porosity of 55% or more and 90% or less, and has an average diameter of the inter-pore communicating parts of 50 .mu.m or more, a pore diameter |
| 6250914 |
Wafer heating device and method of controlling the same |
June 26, 2001 |
| The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the |
| 6245313 |
Process for manufacturing a product of glassy carbon |
June 12, 2001 |
| The object of the present invention is to provide a process for manufacturing a product of glassy carbon, having endurance strength to fatigue at elevated temperature, and to thermal fatigue. After curing the material resin in a mold, the cured resin is baked to obtain a glassy carbo |
| 6225249 |
Aluminum nitride sintered body, method of producing thereof, electrostatic chuck, susceptor, dum |
May 1, 2001 |
| The aluminum nitride sintered body of the invention has a thermal conductivity equivalent to that of a high purity aluminum nitride sintered body and a volume resistivity of 10.sup.14 .OMEGA..multidot.cm or less, and is composed of aluminum nitride phase and yttrium aluminum oxide phase |
| 6210458 |
Gas filter module having two-part filter and method of producing the same |
April 3, 2001 |
| The gas filter module of the invention has: a housing which has a gas inlet port at one end and a gas outlet port at another end, and which is divided into two portions in a longitudinal direction; a filter body consisting of a porous ceramics member which is loaded into the housing and |
| 6204488 |
Sealing terminal |
March 20, 2001 |
| A sealing terminal includes internal connection lines which are connected to heating elements and external connection lines via which power is supplied. A quartz glass body includes a plurality of grooves in its outer surface to retain the internal and external connection lines in place. |
