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Tokyo Electron, Ltd. Patents
Assignee:
Tokyo Electron, Ltd.
Address:
Tokyo, JP
No. of patents:
58
Patents:


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Patent Number Title Of Patent Date Issued
5829969 Vertical heat treating apparatus November 3, 1998
A vertical heat treating apparatus includes a first boat elevator for carrying a first wafer boat between a wafer transfer region and a predetermined position in a heat treating furnace, and a second boat elevator for carrying a second wafer boat between the wafer transfer region and
5818596 Film thickness measuring apparatus October 6, 1998
A sample is placed on a sample receiving stage for receiving the sample. The sample is transferred one at a time to a measuring table, and a thickness of a thin film formed on a surface of the sample is measured by irradiating the surface of the sample with a measuring light beam. A
5813851 Heat treatment method September 29, 1998
When a wafer boat having wafers, objects to be treated, placed thereon is loaded into a reaction tube, which is then raised in temperature by a heating section at a speed of 50.degree. C./min or more, a pressure reduction degree of the reaction tube is lowered or a hydrogen gas is su
5780849 Apparatus for detecting objects to be transferred for use in semiconductor device fabrication ap July 14, 1998
An apparatus for detecting objects to be transferred includes a wafer detecting unit having photo-sensors which scan a carrier moved up and down on a lift stage to detect wafers held on respective stages in the carrier, and an indication device provided vertically downward on the lift st
5769952 Reduced pressure and normal pressure treatment apparatus June 23, 1998
A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by
5704981 Processing apparatus for substrates to be processed January 6, 1998
A partition member with a buffer plate disposed on the top surface thereof is disposed in a region belonging to a surface-to-be-processed of a substrate-to-be-processed held in a processing apparatus. An injector having cross-sectional areas decreasing toward the forward end thereof is
5440206 Plasma processing apparatus comprising means for generating rotating magnetic field August 8, 1995
In a plasma processing s including a processing chamber and plate-parallel electrodes, provided in the processing chamber, for generating a high-frequency electric field in response to a high-frequency voltage, a ring-shaped core is provided in the periphery of the processing chamber,
5028791 Electron beam excitation ion source July 2, 1991
An electron beam excitation ion source comprises a housing having an ion generation chamber therein. A discharge gas and an accelerated electrons are introduced into the ion generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma
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