| Patent Number |
Title Of Patent |
Date Issued |
| RE39020 |
Plasma process apparatus |
March 21, 2006 |
| A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high |
| D405431 |
Tube for use in a semiconductor wafer heat processing apparatus |
February 9, 1999 |
|
| D405428 |
Heat retaining tube for use in a semiconductor wafer heat processing apparatus |
February 9, 1999 |
|
| D405062 |
Processing tube for use in a semiconductor wafer heat processing apparatus |
February 2, 1999 |
|
| D404015 |
Wafer boat for use in a semiconductor wafer heat processing apparatus |
January 12, 1999 |
|
| 7407324 |
Method and apparatus for monitoring the thickness of a conductive coating |
August 5, 2008 |
| A method and apparatus for determining thickness of a metallic layer being deposited on a collector. The method includes applying an electromagnetic field to a conductive layer on the collector. Then the temperature or the change in temperature of the collector is determined. The metal t |
| 7323220 |
Gas phase growth system, method of operating the system, and vaporizer for the system |
January 29, 2008 |
| A method of operating a gas phase growth system is disclosed. The method includes a processing stage and a stabilizer feeding stage. In a non-limiting embodiment of the disclosure, an organometallic complex is vaporized by a vaporizer, and subsequently fed to a reaction chamber throu |
| 7300891 |
Method and system for increasing tensile stress in a thin film using multi-frequency electromagn |
November 27, 2007 |
| A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electro-magnetic |
| 7279427 |
Damage-free ashing process and system for post low-k etch |
October 9, 2007 |
| A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k material. The process may be configured to remove etch byproducts while preserving feature critical |
| 7265066 |
Method and system for increasing tensile stress in a thin film using collimated electromagnetic |
September 4, 2007 |
| A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to collimated ele |
| 7199046 |
Structure comprising tunable anti-reflective coating and method of forming thereof |
April 3, 2007 |
| An interconnect structure in back end of line (BEOL) applications comprising a tunable etch resistant anti-reflective (TERA) coating is described. The TERA coating can, for example, be incorporated within a single damascene structure, or a dual damascene structure. The TERA coating c |
| 7161360 |
Electrostatic capacitance sensor, electrostatic capacitance sensor component, object mounting bo |
January 9, 2007 |
| An electrostatic capacitance sensor, includes an electrostatic capacitance detector, an operational amplifier in which a feedback impedance circuit is connected between an output terminal and an inverse input terminal of the operational amplifier, a signal line connected between the inve |
| 7085628 |
Apparatus for the correction of temperature drift for pressure sensor, pressure control apparatu |
August 1, 2006 |
| A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided to automatically correct temperature drift of the pressure sensor and accurately detect pressure despite changes in temperature. An embodiment includes an upstream side pressure sensor bet |
| 7059363 |
Method of supplying divided gas to a chamber from a gas supply apparatus equipped with a flow-ra |
June 13, 2006 |
| A method for supplying a specified quantity Q of processing gas while dividing at a desired flow rate ratio Q.sub.1/Q.sub.2 accurately and quickly from a gas supply facility equipped with a flow controller into a chamber. When a specified quantity Q of gas is supplied while being div |
| 6964279 |
Pressure-type flow rate control apparatus |
November 15, 2005 |
| A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by:Also provided is an improved pressure |
| 6910440 |
Apparatus for plasma processing |
June 28, 2005 |
| A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mod |
| 6848470 |
Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow contr |
February 1, 2005 |
| A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow |
| 6820632 |
Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow contr |
November 23, 2004 |
| A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow |
| 6807971 |
Heat treatment apparatus and cleaning method of the same |
October 26, 2004 |
| A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlo |
| 6711454 |
System and method for scheduling the movement of wafers in a wafer-processing tool |
March 23, 2004 |
| In a system and method for scheduling the movement of wafers in a wafer-processing tool, the wafer-processing tool can include a load module, a wafer-transfer unit, a process module, and a scheduler. The scheduler can be configured to generate a schedule for the movement of wafers in |
| 6660124 |
Polishing system and polishing method |
December 9, 2003 |
| A wafer having a polished surface of copper is caused to contact a pad serving as an abrasive member, and the copper is polished while supplying a slurry containing mechanical and chemical polishing particles. Thereafter, when a finishing member of diamond having a large number of fi |
| 6607650 |
Method of forming a plated layer to a predetermined thickness |
August 19, 2003 |
| The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating m |
| 6537347 |
Method for deciding on the timing of replacing a chemical filter, filter life detection sensor, |
March 25, 2003 |
| A chemical filter unit 10 is made of a chemical filter 12 and a filter life detection sensor 1. The filter life detection sensor 1 is provided with an adsorption state detection sensor 3 and a reference sensor 4 to which a flow of air is blocked. The sensors 3 and 4 are made of the same |
| 6535784 |
System and method for scheduling the movement of wafers in a wafer-processing tool |
March 18, 2003 |
| In a system and method for scheduling the movement of wafers in a wafer-processing tool, the wafer-processing tool can include a load module, a wafer-transfer unit, a process module, and a scheduler. The scheduler can be configured to generate a schedule for the movement of wafers in |
| 6465359 |
Etchant for use in a semiconductor processing method and system |
October 15, 2002 |
| A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a |
| 6450190 |
Method of detecting abnormalities in flow rate in pressure-type flow controller |
September 17, 2002 |
| A method of detecting abnormalities in flow rate in pressure-type flow controller. The method checks the flow rate for abnormalities while controlling the flow rate of fluid in a pressure-type flow controller FCS using an orifice--the pressure-type flow controller wherein with the up |
| 6429518 |
Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film |
August 6, 2002 |
| In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO.sub.2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH.sub.4 gas and C.s |
| 6428661 |
Plating apparatus |
August 6, 2002 |
| This plating apparatus 4 includes a plating bath 15 filled up with a plating solution, a first O ring 17 arranged on a top part of the plating bath 15, for electrical connection with an underlying electrode 18 formed on a wafer 2, a second O ring 20 arranged on the top part of the platin |
| 6422264 |
Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow contr |
July 23, 2002 |
| A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow |
| 6419985 |
Method for producing insulator film |
July 16, 2002 |
| A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure is disclosed. An inert plasma producing gas, such as argon, is introduced into a vacuum vessel along with a thin film deposition |
| 6383333 |
Protective member for inner surface of chamber and plasma processing apparatus |
May 7, 2002 |
| An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. Th |
| 6383300 |
Heat treatment apparatus and cleaning method of the same |
May 7, 2002 |
| A semiconductor wafer is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlo |
| 6360762 |
Method for feeding gases for use in semiconductor manufacturing |
March 26, 2002 |
| An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pip |
| 6327540 |
Method of detecting end point of process, end point detector, computer memory product and chemic |
December 4, 2001 |
| The invention provides a method of detecting an end point, an end point detector, a computer memory product and a chemical mechanical polishing apparatus, in which a physical quantity changing in accordance with proceeding of a process is measured, first time series data and second t |
| 6314992 |
Fluid-switchable flow rate control system |
November 13, 2001 |
| A fluid-switchable flow rate control system that permits free changing of the full scale flow rate and which can control a plurality of kinds of fluids with high precision. The fluid-switchable flow rate control system controls the flow rate of fluid with the pressure P.sub.1 on the upst |
| 6302130 |
Method and apparatus for detection of orifice clogging in pressure-type flow rate controllers |
October 16, 2001 |
| A method and apparatus for detection of clogging of an orifice by measuring the upstream side pressure without breaking up the piping system in a flow rate control unit using an orifice, so as to extend the life of the flow rate control unit and enhance its safety. The apparatus of detec |
| 6289923 |
Gas supply system equipped with pressure-type flow rate control unit |
September 18, 2001 |
| An improved and reduced-size and low-cost gas supply system equipped with a pressure-type flow rate control unit, to be used, for instance, in semiconductor manufacturing facilities is disclosed. Transient flow rate characteristics are improved to prevent the gas from overshooting when t |
| 6262397 |
Heat treatment apparatus and heat treatment method |
July 17, 2001 |
| From a side surface of a susceptor 2, in parallel with a surface of the susceptor 2 and directing toward a center portion, a sensor insertion hole 21 is bored, in this sensor insertion hole 21, a temperature sensor 30 is fixed. A tip of a sensor insertion hole 21 is communicated with a h |
| 6210482 |
Apparatus for feeding gases for use in semiconductor manufacturing |
April 3, 2001 |
| An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pip |
| 6206974 |
Substrate processing system, interface apparatus, and substrate transportation method |
March 27, 2001 |
| An interface apparatus places, in a boat, plural wafers transported thereto one by one from an application apparatus for performing single wafer processing, then transports the boat having the wafers placed therein to a heating apparatus for subjecting plural wafers to a heat treatment |
| 6178995 |
Fluid supply apparatus |
January 30, 2001 |
| A fluid feeding apparatus includes parallel flow passages connected at their downstream side, each parallel passage including a pressure flow controller (C) for regulating the flow of fluid and a fluid changeover valve (D) for opening and closing the passage on the downstream side of |
| 6159862 |
Semiconductor processing method and system using C.sub.5 F.sub.8 |
December 12, 2000 |
| A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a |
| 6158679 |
Orifice for pressure type flow rate control unit and process for manufacturing orifice |
December 12, 2000 |
| An orifice for a pressure-type flow rate controller, which can be produced by a simple method at a low cost, that provides a linearity--between the pressure P1 on the upstream side of the orifice and the flow rate--over a wide range of the pressure ratio P2/P1 of the pressure P2 on the |
| 6152168 |
Pressure-type flow rate control apparatus |
November 28, 2000 |
| A pressure-type flow rate control apparatus for use especially in the gas supply system in semiconductor manufacturing facilities. The flow control apparatus is provided with a bore-variable orifice, which permits easy switching of the fluid flow rate control range as well as size reduct |
| 6053983 |
Wafer for carrying semiconductor wafers and method detecting wafers on carrier |
April 25, 2000 |
| A plurality of projections 21 is disposed on a inner surface of a lid 20 which is detachably attached to a carrier body 10. Each projection 21 has a tapered end part 22 with inclined surfaces 23, 24. The surfaces 23, 24 are in the form of semitransparent mirror. A Light emitting device 4 |
| 5980195 |
Positioning apparatus for substrates to be processed |
November 9, 1999 |
| An apparatus is provided with a plurality of stages of mounting bases on each of which is disposed upwardly orientated, narrow tapered pins around the periphery of a semiconductor wafer, and a plurality of stages of turntables, one for each of the mounting bases, with the mounting bases |
| 5960562 |
Processing apparatus of processing wafer sheets |
October 5, 1999 |
| A processing apparatus of the invention includes a rotary processing part for rotating and drying plural sheets of objects to be processed collectively in order to allow the object to be rotated immediately after they are accommodated in the rotary processing part and a balance adjus |
| 5913978 |
Apparatus and method for regulating pressure in two chambers |
June 22, 1999 |
| A gas is supplied to a second chamber so that the pressure in the second chamber is raised to a predetermined level. A communication passage is provided for internally connecting the first and second chambers. When the pressure in the first chamber attains the predetermined level, the ga |
| 5911232 |
Ultrasonic cleaning device |
June 15, 1999 |
| Disclosed is an ultrasonic cleaning device including a cleaning tank containing a semiconductor wafer W and pure water, and a plurality of vibrating plates provided with the cleaning tank. The vibrating plates are electric distortion transducers. By controlling the output phases of o |
| 5851600 |
Plasma process method and apparatus |
December 22, 1998 |
| Plasma processing gas is introduced into an upper portion of a processing vessel and a film-formation gas is simultaneously introduced into the vicinity of a substrate to be processed. The plasma processing gas is ionized to form a first plasma and any of the plasma processing gas that |
