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Tokyo Electron Limited, Inc. Patents |
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Assignee: Tokyo Electron Limited, Inc.
Address: Tokyo, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7344993 |
Low-pressure removal of photoresist and etch residue |
March 18, 2008 |
| A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrat |
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