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Tokyo Electron Limited Patents
Assignee:
Tokyo Electron Limited
Address:
Tokyo, JP
No. of patents:
4198
Patents:












Patent Number Title Of Patent Date Issued
RE43652 Substrate processing control method and storage medium September 11, 2012
In a substrate processing control method, a first process acquires a first-reflectance-spectrum of a beam reflected from the first-fine-structure and a second-reflectance-spectrum of a beam reflected from the second-fine-structure for each of varying-pattern-dimensions of the first-f
RE42655 Mechanism for fixing probe card August 30, 2011
In a mechanism for fixing a probe card, the probe card and a support frame are joined to each other about the axis of each of the probe card and the support frame by a plurality of first fastening members. Also, the outer circumferential edge portion of the support frame is fixed by a
RE42637 Probe card August 23, 2011
The present invention provides a probe card that can examine an object with small electrode spacing. A probe supporting plate is provided to a lower face side of a printed wiring board of a probe card. A plurality of probes are supported by the probe supporting plate. The probes comprise
RE42115 Mechanism for fixing probe card February 8, 2011
In a mechanism for fixing a probe card, the probe card and a support frame are joined to each other about the axis of each of the probe card and the support frame by a plurality of first fastening members. Also, the outer circumferential edge portion of the support frame is fixed by a pl
RE41515 Contactor and production method for contactor August 17, 2010
A conventional probe card is very complex in a support structure of probe terminals and it has been difficult to change an array of the probe terminals correspondingly to various arrays of electrode pads of an object to be checked. A contactor (1) of the present invention simultaneou
RE40963 Method for plasma processing by shaping an induced electric field November 10, 2009
A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber, supplying a high frequency power to a spiral antenna generating an induced electric field in the processing
RE40052 Heat treatment apparatus February 12, 2008
A heat treatment table is divided into two or more regions, a heater is disposed for each region. On a predetermined portion of the heat treatment table, a plurality of sensors are disposed separately each other. A relation between temperatures of the respective portions on the heat
RE40046 Processing system February 12, 2008
A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating membe
RE39969 Processing system January 1, 2008
A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating memb
RE39939 Processing system December 18, 2007
A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating memb
RE37470 Substrate processing apparatus and substrate processing method December 18, 2001
A wafer processing apparatus includes a common path, extending in a Y-axis direction, in which one wafer or a plurality of wafers are conveyed, a plurality of process units stacked on both sides of the common path to constitute multi-stage structures, a main handler moved in the common p
RE36810 Plasma processing apparatus and method August 8, 2000
A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhaust
RE36371 Method of forming polycrystalline silicon film in process of manufacturing LCD November 2, 1999
In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasam CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected
D693319 Holding pad for transferring a wafer November 12, 2013
D691974 Holding pad for transferring a wafer October 22, 2013
D666979 Substrate holder September 11, 2012
D665759 Substrate transfer holder August 21, 2012
D658693 Liner for plasma processing apparatus May 1, 2012
D658692 Liner for plasma processing apparatus May 1, 2012
D658691 Liner for plasma processing apparatus May 1, 2012
D655262 Side wall for reactor for manufacturing semiconductor March 6, 2012
D655261 Gas-separating plate for reactor for manufacturing semiconductor March 6, 2012
D655260 Gas-separating plate for reactor for manufacturing semiconductor March 6, 2012
D655259 Top plate for reactor for manufacturing semiconductor March 6, 2012
D655258 Side wall for reactor for manufacturing semiconductor March 6, 2012
D655257 Top plate for reactor for manufacturing semiconductor March 6, 2012
D654884 Top plate for reactor for manufacturing semiconductor February 28, 2012
D654883 Top plate for reactor for manufacturing semiconductor February 28, 2012
D654882 Gas-separating plate for reactor for manufacturing semiconductor February 28, 2012
D620085 Gas supply pipe for manufacturing semiconductor wafers July 20, 2010
D619630 Process tube for manufacturing semiconductor wafers July 13, 2010
D617796 Stylus pen with microphone and camera June 15, 2010
D616396 Pedestal of heat insulating cylinder for manufacturing semiconductor wafers May 25, 2010
D616395 Support of wafer boat for manufacturing semiconductor wafers May 25, 2010
D616394 Support of wafer boat for manufacturing semiconductor wafers May 25, 2010
D616393 Heat radiation fin of heat insulating cylinder for manufacturing semiconductor wafers May 25, 2010
D616392 Heat radiation fin of heat insulating cylinder for manufacturing semiconductor wafers May 25, 2010
D616391 Pedestal of heat insulating cylinder for manufacturing semiconductor wafers May 25, 2010
D616390 Quartz cover for manufacturing semiconductor wafers May 25, 2010
D615937 Heat radiation fin of heat insulating cylinder for manufacturing semiconductor wafers May 18, 2010
D615936 Pedestal of heat insulating cylinder for manufacturing semiconductor wafers May 18, 2010
D612879 Semiconductor wafer inspection apparatus March 30, 2010
D611013 Process tube for manufacturing semiconductor wafers March 2, 2010
D610176 Coater cup February 16, 2010
D609652 Wafer attracting plate February 9, 2010
D607424 Wafer carrying-in/out apparatus January 5, 2010
D604257 Heater for semiconductor manufacturing November 17, 2009
D602882 Wafer carrying-in/out apparatus October 27, 2009
D601979 Pedestal base of a heat insulating cylinder for manufacturing semiconductor wafers October 13, 2009
D601521 Heater for manufacturing semiconductor October 6, 2009

 
 
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