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Tokai Carbon Company, Ltd. Patents
Assignee:
Tokai Carbon Company, Ltd.
Address:
Tokyo, JP
No. of patents:
11
Patents:




Patent Number Title Of Patent Date Issued
6893749 SiC-formed material May 17, 2005
A nitrogen-doped n-type SiC-formed material consisting of high purity .beta.-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by w
6444974 Method for transferring a dummy wafer September 3, 2002
Dummy wafers of SiC having low light transmission properties to light from the light source of a photo-sensor are used, and when wafers undergoes a heat treatment, the dummy wafers are transferred from a wafer cassette to a wafer boat in which the number of dummy wafers and a state of
6426133 Graphite material coated with silicon carbide July 30, 2002
A graphite material coated with silicon carbide which exhibits superior physical impact resistance and can be manufactured at low cost. The material includes a graphite substrate coated with a silicon carbide film with a thickness of 30-50 .mu.m, wherein a mixed layer of graphite and
6383333 Protective member for inner surface of chamber and plasma processing apparatus May 7, 2002
An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. Th
6300226 Formed SIC product and manufacturing method thereof October 9, 2001
A formed SiC product having a low degree of light transmittance useful in a variety of heat resistant components such as equalizing rings, dummy wafers, and other components employed in semiconductor manufacturing facilities, and the manufacturing method thereof. The product is a CVD
6197870 Hard-type high-structure carbon black and rubber composition comprising same March 6, 2001
A hard-type high-structure carbon black capable of providing the rubber comprising the carbon black with a high modulus, superior abrasion resistance, and gripping performance, exhibiting high abrasion resistance corresponding to the modulus, and suitable for tire treads, and a rubber
5993770 Silicon carbide fabrication November 30, 1999
An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and an average grain diameter of the
5993596 Plasma-etching electrode plate November 30, 1999
A plasma-etching electrode plate of glassy carbon is characterized by a thickness greater than 4.5 mm and a thermal conductivity greater than 5 W/m.multidot.K at 300K. Due to these characteristic properties, it has a uniform surface temperature distribution and permits etching on large
5882807 Jig for heat treatment and process for fabricating the jig March 16, 1999
A jig used for heat treatment made from an SiC-coated silicon carbide material, wherein the SiC film is coated by the CVD method on a silicon carbide matrix in which silicon has been impregnated and wherein there are no pores with a diameter of 2 .mu.m or larger in the outer layer of the
5853523 Plasma-etching electrode plate December 29, 1998
A plasma-etching electrode plate in the form of flat glassy carbon plate is characterized by a flatness with a warp smaller than 0.3 mm. This flatness permits the electrode plate to have a uniform surface temperature distribution which contributes to uniform etching on semiconductor wafe
5525276 Method for manufacturing high strength isotropic graphite piston components June 11, 1996
A method for manufacturing a high strength isotropic graphite including a kneading step to mix an aggregate consisting of carbonaceous fine powder with a pitch binder a molding step to mold the raw material prepared by re-pulverizing the kneaded mixture using rubber press method and a

 
 
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