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Therma-Wave, Inc. Patents
Assignee:
Therma-Wave, Inc.
Address:
Fremont, CA
No. of patents:
188
Patents:


1 2 3 4










Patent Number Title Of Patent Date Issued
7342661 Method for noise improvement in ellipsometers March 11, 2008
A normalization procedure for an ellipsometric system having a rotating optical element such as a polarizer or compensator is disclosed. In operation, a first DC component is extracted from the measured output signals obtained during the first 180 degrees of rotation of the optical e
7280215 Photothermal system with spectroscopic pump and probe October 9, 2007
The ability of a Modulated Optical Reflectivity (MOR) or Thermal Wave (TW) system to measure characteristics of a sample based on the amplitude and phase of a probe beam reflected from the surface of the sample can be improved by providing a polychromatic pump and/or probe beam that can
7251036 Beam splitter/combiner for optical metrology tool July 31, 2007
A combiner for optical beams includes a substrate overlaid by a multi-layer dielectric film stack. The substrate is a clear material and the dielectric film stack is a series of alternating layer of high and low refractive index. This gives the combiner relatively high reflectivity a
7248375 Critical dimension analysis with simultaneous multiple angle of incidence measurements July 24, 2007
A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is
7248367 Characterization of ultra shallow junctions in semiconductor wafers July 24, 2007
To measure USJ profile abruptness, a PMR-type optical metrology tool is to perform a series of two or more measurements, each with different pump/probe beam separations. Quadrature (Q) and in-phase (I) measurements are obtained for each measurement and used to derive a line in I-Q space.
7239390 Modulated scatterometry July 3, 2007
An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scattero
7233390 Scatterometry for samples with non-uniform edges June 19, 2007
A method for simulating the optical properties of samples having non-uniform line edges includes creating a model for the sample being analyzed. To simulate roughness, lines within the model are represented as combinations of three dimensional objects, such as circular or elliptical
7227637 Measurement system with separate optimized beam paths June 5, 2007
The subject invention relates to a broadband optical metrology system that segregates the broadband radiation into multiple sub-bands to improve overall performance. Each sub-band includes only a fraction of the original bandwidth. The optical path--the light path that connects the i
7224461 Method for determining modifications to semiconductor optical functions May 29, 2007
A method for modeling the complex refractive index of doped, strained or ultra-thin semiconductors starts with a model for a standard bulk material which may be in any form such as a pre-existing lookup table, a dispersion model derived from an effective medium approximation (EMA) or
7215431 Systems and methods for immersion metrology May 8, 2007
Fluid immersion technology can be utilized to increase the resolution and angular range of existing metrology systems. An immersion fluid placed between the metrology optics and the sample can reduce the refraction at the sample interface, thereby decreasing the spot size of the beam on
7212288 Position modulated optical reflectance measurement system for semiconductor metrology May 1, 2007
A system for evaluating semiconductor wafers includes illumination sources for generating probe and pump beams. The pump beam is focused on the surface of a sample and a beam steering mechanism is used to modulate the point of focus in a predetermined pattern. The moving pump beam in
7206125 Infrared blocking filter for broadband Optical metrology April 17, 2007
An infrared filter for an optical metrology tool includes a substrate having film stacks on opposing surfaces thereof. A first film stack can be used to reflect ultra-violet radiation and transmit radiation at non-ultraviolet wavelengths. The second film stack can be used to reflect
7206071 Detector configurations for optical metrology April 17, 2007
An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector.
7206070 Beam profile ellipsometer with rotating compensator April 17, 2007
An optical inspection device includes a light source for generating a probe beam. The probe beam is focused onto a sample to create a spread of angles of incidence. After reflecting from the sample, the light is imaged onto a two dimensional array of photodetectors. Prior to reaching
7190460 Focusing optics for small spot optical metrology March 13, 2007
A system for focusing broadband light within a reflectometer includes a concave spherical mirror for gathering light from the surface of a sample under inspection. The concave spherical mirror projects the received light to a convex spherical mirror. The combination of the two mirrors
7173700 Normal incidence rotating compensator ellipsometer February 6, 2007
A normal incidence rotating compensator ellipsometer includes an illumination source that produces a broadband probe beam. The probe beam is redirected by a beam splitter to be normally incident on a sample under test. Before reaching the sample, the probe beam is passed through a ro
7154607 Flat spectrum illumination source for optical metrology December 26, 2006
A flat spectrum illumination source for use in optical metrology systems includes a first light source generating a visible light beam and a second light source generating an ultraviolet light beam. The illumination source also includes an auxiliary light source generating a light be
7145664 Global shape definition method for scatterometry December 5, 2006
A method for modeling samples includes the use of control points to define lines profiles and other geometric shapes. Each control point used within a model influences a shape within the model. Typically, the control points are used in a connect-the-dots fashion where a set of dots defin
7126690 Modulated reflectance measurement system using UV probe October 24, 2006
A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is impart
7116424 Modulated reflectance measurement system with multiple wavelengths October 3, 2006
A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuse
7106459 CD metrology analysis using a finite difference method September 12, 2006
A method for modeling diffraction includes constructing a theoretical model of the subject. A numerical method is then used to predict the output field that is created when an incident field is diffracted by the subject. The numerical method begins by computing the output field at the
7106446 Modulated reflectance measurement system with multiple wavelengths September 12, 2006
A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuse
7099007 Method for determining ion concentration and energy of shallow junction implants August 29, 2006
A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In
7081957 Aperture to reduce sensitivity to sample tilt in small spotsize reflectometers July 25, 2006
An aperture for reducing tilt sensitivity in normal incidence optical metrology is formed to include one or more holes. The aperture is positioned to partially occlude one-half of the pupil of a normal incidence objective. A probe beam is projected to fill the pupil of the objective.
7079249 Modulated reflectance measurement system with fiber laser technology July 18, 2006
A modulated reflectance measurement system includes two diode-based lasers for generating a probe beam and an intensity modulated pump beam. The pump and probe beams are joined into a collinear beam using a laser diode power combiner. One or more optical fibers are used to transport the
7069153 CD metrology method June 27, 2006
A method for rapidly analyzing data gathered during scatterometry and related methods uses a combination of database lookup, database interpolation and theoretical model evaluation. Database lookup is used to provide an initial mapping between a measured optical response and a set of
7068370 Optical inspection equipment for semiconductor wafers with precleaning June 27, 2006
A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enha
7061627 Optical scatterometry of asymmetric lines and structures June 13, 2006
A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered ra
7061614 Measurement system with separate optimized beam paths June 13, 2006
The subject invention relates to a broadband optical metrology system that segregates the broadband radiation into multiple sub-bands to improve overall performance. Each sub-band includes only a fraction of the original bandwidth. The optical path--the light path that connects the i
7060980 Method and system for combined photothermal modulated reflectance and photothermal IR radiometri June 13, 2006
A method and apparatus for evaluating a semiconductor wafer. A combination of a photothermal modulated reflectance method and system with a photothermal IR radiometry system and method is utilized to provide information which can be used to determine properties of semiconductor wafer
7054006 Self-calibrating beam profile ellipsometer May 30, 2006
A real-time calibration method for beam profile ellipsometry systems includes projecting an electromagnetic probe beam having a known polarization state though an objective lens onto the surface of a subject and collecting the reflected probe beam using the same objective. The reflec
7050179 Method and apparatus for multidomain data analysis May 23, 2006
An optical measuring device generates a plurality of measured optical data from inspection of a thin film stack. The measured optical data group naturally into several domains. In turn the thin film parameters associated with the data fall into two categories: local and global. Local
7050162 Optical metrology tool having improved contrast May 23, 2006
The subject invention relates to broadband optical metrology tools for performing measurements of patterned thin films on semiconductor integrated circuits. Particularly a family of optical designs for broadband optical systems wherein the ratio of illumination system to collection s
7046376 Overlay targets with isolated, critical-dimension features and apparatus to measure overlay May 16, 2006
An optical metrology system is disclosed which is configured to minimize the measurement of specularly reflected light and measure primarily scattered light. The system is similar to prior art beam profile measurements but includes a movable baffle to selectively block specularly ref
7031848 Real time analysis of periodic structures on semiconductors April 18, 2006
A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The
7030984 Fast wafer positioning method for optical metrology April 18, 2006
A fast wafer positioning method for optical metrology includes three main steps. In the first step, an initial measurement recipe is constructed for the host system and target wafer. In the next step, the host system performs a test run using the initial measurement and the target wafer.
7027158 Beam splitter/combiner for optical meterology tool April 11, 2006
A combiner for optical beams includes a substrate overlaid by a multi-layer dielectric film stack. The substrate is a clear material and the dielectric film stack is a series of alternating layer of high and low refractive index. This gives the combiner relatively high reflectivity a
7002690 Ion implant monitoring through measurement of modulated optical response February 21, 2006
A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the
6995842 Detector configurations for optical metrology February 7, 2006
An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector.
6989899 Ion implant monitoring through measurement of modulated optical response January 24, 2006
A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the
6989896 Standardized sample for characterizing the performance of a scatterometer January 24, 2006
A standardized sample for scatterometry includes four quadrants each including an inner block surrounded by four outer blocks. A pattern of gratings is repeated within each of the blocks using different resolutions and orientations. Each grating within an outer block has a matching g
6982791 Scatterometry to simultaneously measure critical dimensions and film properties January 3, 2006
An ellipsometer includes a light source for generating a probe beam of polychromatic light for interacting with a sample. A polarizer is used to impart a known polarization state to the probe beam and the polarized probe beam is directed against the sample at a shallow angle of incid
6982567 Combination optical and electrical metrology apparatus January 3, 2006
A combination metrology tool is disclosed for analyzing samples, and in particular semiconductor samples. The device includes a first measurement module for determining electrical characteristics of the sample. In general, such a measurement module will monitor electrical characteris
6972852 Critical dimension analysis with simultaneous multiple angle of incidence measurements December 6, 2005
A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is
6963401 Combination thermal wave and optical spectroscopy measurement systems November 8, 2005
A combination metrology tool is disclosed which is capable of obtaining both thermal wave and optical spectroscopy measurements on a semiconductor wafer. In a preferred embodiment, the principal combination includes a thermal wave measurement and a spectroscopic ellipsometric measurement
6952261 System for performing ellipsometry using an auxiliary pump beam to reduce effective measurement October 4, 2005
An ellipsometer includes a light source for generating a probe beam of polychromatic light for interacting with a sample. The probe beam is passed through a first polarizer that imparts a known polarization state to the probe beam. The polarized probe beam is then directed to reflect
6952258 Wafer chuck with integrated reference sample October 4, 2005
The subject invention relates to a wafer stage, such as may be used in optical wafer metrology instruments. The stage contains a wafer-chuck that can be connected to translation stages for the purpose of clamping and translating the wafer so that a plurality of sites on the wafer surface
6950190 Scatterometry for junction metrology September 27, 2005
The use of scatterometry measurements is proposed for the evaluation of the implantation or annealing of dopants in a semiconductor. In accordance with the subject method, a probe beam of light illuminates the wafer having the dopants implanted therein. The light reflected from the sampl
6947850 Real time analysis of periodic structures on semiconductors September 20, 2005
A system for characterizing periodic structures on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of wavelength or angle of incidence. The output signals are supplied to a parallel processor, which creates an initial theoretica
6947135 Reduced multicubic database interpolation method for optical measurement of diffractive microstr September 20, 2005
A reduced multicubic database interpolation method is provided. The interpolation method is designed to map a function and its associated argument into an interpolated value using a database of points. The database is searched to locate an interpolation cell that includes the functio
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