| Patent Number |
Title Of Patent |
Date Issued |
| 6803242 |
Evaluation method of IG effectivity in semiconductor silicon substrates |
October 12, 2004 |
| In a conventional evaluation method of IG effectivity on Cu in semiconductor silicon substrates, it is required to actually conduct the device process, or a great deal of time, manpower and expenses for manufacturing a MOS device for dielectric breakdown estimation and the like are n |
| 6802928 |
Method for cutting hard and brittle material |
October 12, 2004 |
| It is an object of the present invention to provide a method for slicing a hard and brittle material having a crystal structure, such as a silicon ingot, and more particularly a hard and brittle material cutting method which solves the problem of worsening variance in thickness, nano |
| 6767400 |
Crystal growth method |
July 27, 2004 |
| In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize t |
| 6764547 |
Crystal growth apparatus |
July 20, 2004 |
| An apparatus for growing a crystal, using the cooler 10 surrounding the single crystal 8 for high speed pulling. The cooler 10 is prepared using a copper-based metal and is water cooled. The supporting arm 12 that supports the cooler 10 is prepared using stainless steel or the like, |
| 6755910 |
Method for pulling single crystal |
June 29, 2004 |
| A method capable of securely pulling up a heavy single crystal is described. Using an apparatus comprising a crucible for storing a molten material for a single crystal; a heater for heating the molten material; means for pulling up the single crystal to grow by bringing a seed crystal |
| 6740160 |
Crystal growing apparatus |
May 25, 2004 |
| In a high rate pulling with a cooler 10 surrounding a single crystal 8, steam explosion by leakage from the cooler 10 is prevented. Flow rates La, Lb of cooling water are measured by flowmeters 14a, 14b on a cooling water inflow side and cooling water outflow side of the cooler 10. When |
| 6726319 |
Method for inspecting surface of semiconductor wafer |
April 27, 2004 |
| Particles adherent to a semiconductor wafer surface, and defects such as SFs, mounds, and dislocations present near the semiconductor wafer surface can be accurately divided according to their types at a low cost without being influenced by an inspector's ability. The wafer is scanned wi |
| 6709957 |
Method of producing epitaxial wafers |
March 23, 2004 |
| The invention relates to a method of producing epitaxial wafers for the manufacture of high integration density devices capable of showing stable gettering effect. Specifically, it provides (1) a method of producing epitaxial wafers which comprises subjecting a silicon wafer sliced from |
| 6702892 |
Production device for high-quality silicon single crystals |
March 9, 2004 |
| An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be take |
| 6695035 |
Electromagnetic induction casting apparatus |
February 24, 2004 |
| To restrict to a low level a temperature gradient of an ingot immediately after solidification in a bottomless crucible in a electromagnetic induction casting method using an electrically conductive bottomless crucible. An upper section and a lower section of an electrically conducti |
| 6689213 |
Single crystal pulling apparatus |
February 10, 2004 |
| To impart flexibility suitable for recovery of a quartz crucible to a divided type graphite crucible and avoid damage to the quartz crucible due to the flexibility. A graphite crucible 10 is divided into two or more parts by radial dividing lines 14. An opening 11a is provided in a cente |
| 6649885 |
Thermal processing apparatus |
November 18, 2003 |
| It is difficult to keep a wafer at a prescribed temperature in epitaxial growth and etching, leading to a possibility of variations in quality, but a thermal processing apparatus according to the present invention has a learning-modifying means in a controlling means to learn and modify |
| 6641888 |
Silicon single crystal, silicon wafer, and epitaxial wafer. |
November 4, 2003 |
| There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1.t |
| 6638146 |
Retention plate for polishing semiconductor substrate |
October 28, 2003 |
| The present invention has an object to provide a retention plate used in a polishing device that mirror polishes semiconductor substrates such as silicon wafers, particularly a retention plate used with the hard chuck method, that can prevent roll-off, and can achieve a high improvement |
| 6599760 |
Epitaxial semiconductor wafer manufacturing method |
July 29, 2003 |
| To minimize and stably suppress worsening of a warpage of a wafer in epitaxial treatment. A semiconductor wafer is flattened by a double-sided grinding machine. Machining strains produced at both sides of the semiconductor wafer are removed to measure a direction of the warpage of th |
