| Patent Number |
Title Of Patent |
Date Issued |
| RE39173 |
Silicon single crystal wafer |
July 11, 2006 |
| A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (.degree. C./mm) permits |
| RE38937 |
Susceptor for vapor-phase growth apparatus |
January 24, 2006 |
| It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole 7 passing through to a rear side at the outer peripheral |
| 7397110 |
High resistance silicon wafer and its manufacturing method |
July 8, 2008 |
| A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side |
| 7378332 |
Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing j |
May 27, 2008 |
| Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grind |
| 7368011 |
Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crys |
May 6, 2008 |
| The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical |
| 7329947 |
Heat treatment jig for semiconductor substrate |
February 12, 2008 |
| When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that holds the first j |
| 7329589 |
Method for manufacturing silicon-on-insulator wafer |
February 12, 2008 |
| A method for manufacturing a SOI wafer includes a step of forming a SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and also includes a step of introducing hydrogen into the interface between the insulati |
| 7294203 |
Heat shielding member of silicon single crystal pulling system |
November 13, 2007 |
| A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, |
| 7288791 |
Epitaxial wafer and method for manufacturing method |
October 30, 2007 |
| It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film formation, but thi |
| 7273647 |
Silicon annealed wafer and silicon epitaxial wafer |
September 25, 2007 |
| A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1.times.10.sup.14 atoms/cm.sup.3 |
| 7264674 |
Method for pulling a single crystal |
September 4, 2007 |
| An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of changes in volume of a qua |
| 7258739 |
Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof |
August 21, 2007 |
| Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on the surface layer portion of the wafer. Thereby, the concentration of germanium is enhanced i |
| 7253082 |
Pasted SOI substrate, process for producing the same and semiconductor device |
August 7, 2007 |
| A plurality of recessed portions having different depths is formed in a surface of the active layer wafer or in a bonding surface of the supporting substrate wafer. Those wafers are bonded to each other with an insulation film interposed therebetween. This allows a cavity of higher d |
| 7253069 |
Method for manufacturing silicon-on-insulator wafer |
August 7, 2007 |
| A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the f |
| 7244306 |
Method for measuring point defect distribution of silicon single crystal ingot |
July 17, 2007 |
| A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be symmetrical against the c |
| 7229496 |
Process for producing silicon single crystal layer and silicon single crystal layer |
June 12, 2007 |
| A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600.degree. C. to 950.degree. C. (here, the temperature s |
| 7226864 |
Method for producing a silicon wafer |
June 5, 2007 |
| Provided is an improved method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot |
| 7226571 |
High resistivity silicon wafer and method for fabricating the same |
June 5, 2007 |
| A high resistivity p type silicon wafer with a resistivity of 100 .OMEGA.cm or more, in the vicinity of the surface being formed denuded zone, wherein when a heat treatment in the device fabrication process is performed, a p/n type conversion layer due to thermal donor generation is |
| 7220308 |
Manufacturing method of high resistivity silicon single crystal |
May 22, 2007 |
| To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon sin |
| 7210925 |
Heat treatment jig for silicon semiconductor substrate |
May 1, 2007 |
| A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection |
| 7208058 |
SOI substrate and manufacturing method thereof |
April 24, 2007 |
| An active layer wafer having a larger diameter is placed over a stationary supporting substrate wafer having a smaller diameter. A pusher plate is pressed against an orientation flat of the larger wafer to move the wafer substantially in the horizontal direction. In the course of the pre |
| 7208042 |
Method of manufacturing silicon single crystal and silicon single crystal manufactured by the me |
April 24, 2007 |
| A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz crucible for stori |
| 7198997 |
Method for producing semiconductor substrate, method for producing field effect transistor, semi |
April 3, 2007 |
| In a semiconductor substrate, a field effect transistor, and methods for producing the same, in order to lower threading dislocation density and also to lower surface roughness, a step of repeating, a plurality of times, a process of epitaxially growing a SiGe gradient composition layer |
| 7195669 |
Method of producing silicon monocrystal |
March 27, 2007 |
| A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby |
| 7193724 |
Method for measuring thickness of thin film-like material during surface polishing, and surface |
March 20, 2007 |
| A thickness of a wafer during polishing operation is detected to accurately perform the polishing. A thickness measuring method, which measures the thickness of the wafer of wafer 7 in polishing a surface, comprises the steps of irradiating the thin film-like material during the surf |
| 7172656 |
Device and method for measuring position of liquid surface or melt in single-crystal-growing app |
February 6, 2007 |
| In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of the respective measuri |
| 7163393 |
Heat treatment jig for semiconductor silicon substrate |
January 16, 2007 |
| This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocations that occur as a |
| 7160385 |
Silicon wafer and method for manufacturing the same |
January 9, 2007 |
| A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen concentration and |
| 7138650 |
Semiconductor substrate, field-effect transistor, and their manufacturing method of the same |
November 21, 2006 |
| A semiconductor substrate, a field effect transistor and their manufacturing methods provided with, in order to lower penetrating dislocation density and reduce surface roughness to a practical level, an Si substrate 1, a first SiGe layer 2 on the Si substrate, and a second SiGe laye |
| 7122082 |
Silicon wafer and manufacturing method thereof |
October 17, 2006 |
| A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5.times.10.sup.8 cm.sup.-3 and 1.times.10.sup.11 cm.sup.-3. |
| 7074271 |
Method of identifying defect distribution in silicon single crystal ingot |
July 11, 2006 |
| A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated reference sample, and a |
| 7067005 |
Silicon wafer production process and silicon wafer |
June 27, 2006 |
| This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or |
| 7063743 |
Apparatus and method for pulling single crystal |
June 20, 2006 |
| The present invention teaches an apparatus for pulling a single crystal, whereby a radial temperature gradient of a seed crystal and/or a neck is reduced to a minimum so as to inhibit occurrence of thermal stress and prevent induction of dislocations, thereby resulting in an improvement |
| 7056789 |
Production method for semiconductor substrate and production method for field effect transistor |
June 6, 2006 |
| The present invention relates to a semiconductor substrate production method, field effect transistor production method, semiconductor substrate and field effect transistor which, together with having low penetrating dislocation density and low surface roughness, prevent worsening of |
| 7052547 |
Apparatus for supplying raw material |
May 30, 2006 |
| In single crystal growth by means of a CZ method, a granular/lump polycrystalline raw material is additionally supplied into a raw material melt in a crucible through a vertical charging tube. A raw material accumulating section is provided at a site part way downward in the vertical |
| 7029380 |
Double-side polishing method and apparatus |
April 18, 2006 |
| In order to improve a flatness of a work in single wafer type double-side polishing in which one wafer is polished with one carrier, a carrier larger in diameter than upper and lower surface plates that rotate is inserted between the surface plates, and a wafer smaller in diameter than |
| 7014704 |
Method for growing silicon single crystal |
March 21, 2006 |
| A method for growing a silicon single crystal used for semiconductor integrated circuit devices, wherein the single crystal is grown by the CZ method at a nitrogen concentration of 1.times.10.sup.13 atoms/cm.sup.3 1.times.10.sup.15 atoms/cm.sup.3 with a cooling rate of not less than |
| 7002674 |
Method and apparatus for inspecting defects |
February 21, 2006 |
| Provided are a method and apparatus for inspecting a defect on a plane, such as a surface or a section, of an object to be inspected. The object is, for instance, a silicon wafer. A whole area of a plane of the object is first imaged by an optical system to gain image signals. Then, a |
| 7001456 |
Apparatus and method for supplying Crystalline materials in czochralski method |
February 21, 2006 |
| In supplying crystalline materials in the Czochralski method, it is made use of an apparatus equipped with an inner vessel having an opening portion at the lower part or bottom thereof, which is to be charged with a granular solid material, an outer vessel containing the inner vessel |
| 6994835 |
Silicon continuous casting method |
February 7, 2006 |
| The present invention reduces temperature gradient in the direction of the radius of solidified ingots of silicon immediately after solidification, which has serious influences on the quality as a solar cell and improves the quality. Silicon raw materials are melted inside a bottomless |
| 6971835 |
Vapor-phase epitaxial growth method |
December 6, 2005 |
| A single opening is formed in a central portion of a susceptor of a vapor phase epitaxial growth system. Consequently, any dopant diffused off outwardly from the back surface of a wafer during an epitaxial growth process can be exhausted through the opening to the beneath side with r |
| 6965149 |
Epitaxial semiconductor wafer and a manufacturing method thereof |
November 15, 2005 |
| An epitaxial semiconductor wafer having a wafer substrate made of semiconductor single crystal, an epitaxial layer deposited on a top surface of said wafer substrate and a polysilicon layer deposited on a back surface of said wafer substrate. The semiconductor single crystal is expos |
| 6908509 |
CZ raw material supply method |
June 21, 2005 |
| Additional charge of a solid raw material 13 in the shapes of granules/lumps, low in raw material cost, and with no risk of cracking, is performed into a molten raw material 14 in a crucible in a static manner without solidifying a surface of the molten raw material 14 in the crucibl |
| 6905771 |
Silicon wafer |
June 14, 2005 |
| A silicon wafer is doped with boron and germanium in a range that satisfies a relational expression defined by: -0.8.times.10.sup.-3.ltoreq.4.64.times.10.sup.-24.times.[Ge]-2. 69.times.10.sup.-23.times.[B].ltoreq.1.5.times.10.sup.-3. This can reduce the miss-fit dislocation which mig |
| 6878451 |
Silicon single crystal, silicon wafer, and epitaxial wafer |
April 12, 2005 |
| There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1.t |
| 6875643 |
SOI substrate and manufacturing method thereof |
April 5, 2005 |
| An SOI substrate having a partial SOI structure in which a buried insulating film having a predetermined area is formed via an active layer in a part of a silicon single crystal substrate in plan view by ion-implanting elements to the part of the substrate and then applying thereto a |
| 6835245 |
Method of manufacturing epitaxial wafer and method of producing single crystal as material there |
December 28, 2004 |
| Epitaxial wafers showing marked IG effects can be manufactured from silicon single crystals doped or not doped with nitrogen without requiring any additional heat treatment process step while reducing the density of epitaxial layer defects. According to the first manufacturing method, an |
| 6830985 |
Method and apparatus for producing bonded dielectric separation wafer |
December 14, 2004 |
| The present invention provides a method for producing a bonded dielectric separation wafer in which an auto-alignment can be carried out with reference to the orientation flat of a supporting substrate wafer after the wafer bonding step, and also an apparatus to be used for bonding w |
| 6805746 |
Method for supplying CZ material |
October 19, 2004 |
| Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially charged into a crucible. |
| 6803242 |
Evaluation method of IG effectivity in semiconductor silicon substrates |
October 12, 2004 |
| In a conventional evaluation method of IG effectivity on Cu in semiconductor silicon substrates, it is required to actually conduct the device process, or a great deal of time, manpower and expenses for manufacturing a MOS device for dielectric breakdown estimation and the like are n |
