Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Sumco Corporation Patents
Assignee:
Sumco Corporation
Address:
Tokyo, JP
No. of patents:
206
Patents:


1 2 3 4 5










Patent Number Title Of Patent Date Issued
8579679 Conditioning method and conditioning apparatus for polishing pad for use in double side polishin November 12, 2013
The present invention provides an apparatus capable of uniformly grinding an polishing pad. Further, the present invention provides a method of grinding an polishing pad by using the grinding apparatus. Specifically, the present invention provides a method of, in a double-side polishing
8568537 Epitaxial wafer and method of producing the same October 29, 2013
An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon
8298437 Alkali etching liquid for silicon wafer and etching method using same October 30, 2012
An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etch
8296961 Polishing pad thickness measuring method and polishing pad thickness measuring device October 30, 2012
A polishing pad thickness measuring method measures the thickness of a polishing pad attached to an upper surface of a surface plate. The polishing pad thickness measuring method measures a first distance between an upper surface of the polishing pad and a reference position on a ver
8293070 Oxygen ion implantation equipment October 23, 2012
In oxygen ion implantation equipment, a chamber has a bottom wall on one end face thereof and is open in the other end face thereof. A wafer holder rotatably holding a plurality of wafers on the same circumference of a circle is housed in the chamber. Inside a cap closing an opening of
8284395 Wafer surface measuring apparatus October 9, 2012
A wafer surface measuring apparatus which measures a surface of the wafer by irradiating a laser beam on a wafer comprising a measuring stage that supports the outer edge of the wafer and loads the wafer in a manner not contacting the rear surface of the wafer and the stage surface, a wa
8277283 Wafer polishing method and wafer produced thereby October 2, 2012
A wafer is polished by a method comprising a slicing step of cutting out a wafer from a single crystal ingot and a step of polishing at least one of both surfaces and an end face of the wafer, wherein the at least one surface and end face of the wafer are simultaneously subjected to a
8263484 High resistivity silicon wafer and method for manufacturing the same September 11, 2012
This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 k .OMEGA.cm, an oxygen concentration Oi of 5.0.times.10.sup
8231852 Silicon wafer and method for producing the same July 31, 2012
It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be
8222124 Method for manufacturing SIMOX wafer and SIMOX wafer July 17, 2012
This method for manufacturing a SIMOX wafer includes: forming a mask layer on one surface side of a silicon single crystal wafer, which has an opening on a region where a BOX layer is to be formed; implanting oxygen ions through the opening of the mask layer into the silicon single c
8221545 Procedure for in-situ determination of thermal gradients at the crystal growth front July 17, 2012
A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of char
8187378 Silicon single crystal pulling method May 29, 2012
An object of the present invention is to provide a silicon single crystal pulling method of accurately controlling the diameter of a silicon single crystal, thereby obtaining a high-quality silicon single crystal with little crystal defect. According to an aspect of the present invention
8183133 Method for producing semiconductor substrate May 22, 2012
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, an
8173553 Epitaxial wafer and production method thereof May 8, 2012
A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is
8173523 Method of removing heavy metal in semiconductor substrate May 8, 2012
To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a material that lowers a pote
8173449 Method for making COP evaluation on single-crystal silicon wafer May 8, 2012
An evaluation area of an evaluation object wafer is concentrically divided in a radial direction, an upper limit value to the number of COPs is set in each divided evaluation segment, and an acceptance determination of the single-crystal silicon wafer is made using the upper limit va
8172942 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, May 8, 2012
The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range
8163083 Silica glass crucible and method for pulling up silicon single crystal using the same April 24, 2012
A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 .mu.m/hr or less, using a silica gl
8153450 Method for manufacturing SIMOX wafer April 10, 2012
At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means by flowing a heated fl
8147295 Method of polishing silicon wafer April 3, 2012
A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon w
8124501 Method of producing semiconductor wafer February 28, 2012
A semiconductor wafer is produced by irradiating a laser beam to either face of a semiconductor wafer so as to fit a focusing position into a given depth position of the semiconductor wafer to generate a multiphoton absorption process only in a specific portion of the semiconductor wafer
8110486 Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insu February 7, 2012
A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is
8105078 Heat treatment jig for semiconductor silicon substrates and method for manufacturing the same January 31, 2012
A heat treatment jig for semiconductor silicon substrates is configured such that a cristobalitized oxide film is formed in a region where the cristobalitized oxide film is in contact with a silicon substrate backside. When said heat treatment jig is used, generation of a slip can be
8101508 Silicon substrate and manufacturing method thereof January 24, 2012
A silicon substrate is manufactured from a single crystal silicon that is doped with phosphorus (P) and is grown by a CZ method to have a predetermined carbon concentration and a predetermined initial oxygen concentration. An n+ epitaxial layer or an n+ implantation layer that is dop
8097511 Semiconductor device having P-N column layer and method for manufacturing the same January 17, 2012
A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type column
8092278 Reclamation method of semiconductor wafer January 10, 2012
Chamfer correction is performed to a chamfered portion at least on a front side of a silicon wafer after an incoming inspection. Thereby, a thickness of the chamfered portion on the front side of the wafer is restored, and thus the number of reclamation cycles of the silicon wafer ca
8092277 Method of grinding semiconductor wafers, grinding surface plate, and grinding device January 10, 2012
A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers by rotating the wafers between a pair of upper and lower rotating surface plates in a state where the wafers are held on a carrier so that centers of the wafers
8080106 Epitaxial silicon wafer and production method thereof December 20, 2011
Provided are an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one, and a production method thereof. An epitaxial silicon wafer comprising a si
8067820 Silocon wafer supporting method, heat treatment jig and heat-treated wafer November 29, 2011
Provided is a method applicable to the production of silicon wafers having crystal orientation <100> or <110> and consisting in specifying wafer-supporting positions on the occasion of heat treatment in a vertical heat treatment furnace as well as a heat treatment jig for
8063466 Semiconductor substrate for solid-state image sensing device as well as solid-state image sensin November 22, 2011
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silic
8061225 Method for determining COP generation factors for single-crystal silicon wafer November 22, 2011
A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density.sub.RADIUSMAX, a minimum value of the COP density is set as COP dens
8048769 Method for producing bonded wafer November 1, 2011
There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for acti
8048767 Bonded wafer and method for producing bonded wafer November 1, 2011
A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle
8030184 Epitaxial wafer and method of producing the same October 4, 2011
An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon
8030183 Method for reducing crystal defect of SIMOX wafer and SIMOX wafer October 4, 2011
The method includes: a first step of colliding ions implanted from a surface of a SIMOX wafer into a silicon layer underneath a BOX layer against crystal defects to destroy the crystal defects; and a second step of heating the wafer obtained in the first step to recrystallize the sil
8026182 Heat treatment jig and heat treatment method for silicon wafer September 27, 2011
In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projec
8012258 Melt surface position monitoring apparatus in silicon single crystal growth process September 6, 2011
The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion of seeding as a reference position and an estimated melt surface position can be calculat
8012255 Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process September 6, 2011
An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback
8008638 Ion implantation apparatus and ion implantation method August 30, 2011
This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in regions where there
8003494 Method for producing a bonded wafer August 23, 2011
In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer fo
7998867 Method for manufacturing epitaxial wafer August 16, 2011
An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surf
7993942 Method of detecting heavy metal in semiconductor substrate August 9, 2011
A method of detecting heavy metal in a semiconductor substrate, includes: a gate oxide film forming step of forming an organic oxide film by spin coating or a sol-gel process, and forming a metal/oxide film/semiconductor junction element by using a mercury probe method; and a step of
7960254 Manufacturing method for epitaxial wafer June 14, 2011
To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to th
7960253 Thin silicon wafer with high gettering ability and production method thereof June 14, 2011
In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 .mu.m and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5.times.10.sup.7 precipitates/cm.sup.3.
7960249 Method for producing wafer for backside illumination type solid imaging device June 14, 2011
A wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side is produced by a method comprising
7960225 Method of controlling film thinning of semiconductor wafer for solid-state image sensing device June 14, 2011
The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is rea
7956335 Wafer holding tool for ion implanting apparatus June 7, 2011
A wafer holding assembly is provided that is capable of preventing the temperature difference generated between a wafer and a holding pin through beam irradiation. In one embodiment, the wafer holding assembly has a plurality of holding pins for holding a wafer in the ion implanting
7955982 Method for smoothing wafer surface and apparatus used therefor June 7, 2011
Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over t
7955874 Method of producing bonded silicon wafer June 7, 2011
A bonded silicon wafer is produced by a method comprising a step of implanting oxygen ions from one surface of a silicon wafer for active layer to form an oxygen ion implanted layer, a step of bonding the one surface of the silicon wafer for active layer to one surface of a silicon w
7955440 Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer June 7, 2011
After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing compo
1 2 3 4 5

 
 
  Recently Added Patents
Image processing apparatus, image processing method, and program
Clothing fastener accessory
Method for processing power headroom and terminal thereof
Method of forming a power supply controller and structure therefor
Method, device, and system for configuring component carrier in carrier aggregation scenario
Mobile communication apparatus
Treatment of cancer using the sodium salt of a benzoic acid derivative
  Randomly Featured Patents
Method for forming thin solid lubricious films and film articles made thereby
Boatsaver "super pro rod holder base"
Desk
Composition and method for treatment of MRSA
Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fabricating it
Abrading blade
Anchoring system for a medical article
Bi-level ballast circuit for operating HID lamps
Finger swipe fluid-transfer collection assembly and method of using the same
Multi-directional light source