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Stanley Electric Co., Ltd. Patents
Assignee:
Stanley Electric Co., Ltd.
Address:
Tokyo, JP
No. of patents:
380
Patents:


1 2 3 4 5 6 7 8


Patent Number Title Of Patent Date Issued
RE30556 Indicating element and method of manufacturing same March 24, 1981
An indicating element comprises a base plate of P-type or N-type epitaxial crystals, a N-type or P-type indicating layer of diffusion or growth planarly formed on the base plate, and an electrode layer provided on the planar indicating layer and having a desired pattern thereon. The elem
D280812 Light-emitting diode semiconductor chip with leads October 1, 1985
D278049 Light-emitting diode semiconductor chip with leads March 19, 1985
D278048 Light-emitting diode semiconductor chip with leads March 19, 1985
D277955 Light-emitting diode semiconductor chip with leads March 12, 1985
D266110 Electric discharge lamp September 7, 1982
D266026 Fluorescent lamp August 31, 1982
D260441 Fluorescent lamp August 25, 1981
D254332 Lens for a lamp February 26, 1980
D251752 Fluorescent lamp May 1, 1979
7429754 Semiconductor device, its manufacture method and electronic component unit September 30, 2008
A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure
7419288 Vehicle lamp with a first reflector, a second reflector, and shielding plate September 2, 2008
A vehicle light can be configured to have a depth that is remarkably small. The vehicle light can include a first reflector that is an ellipse group reflector with a major/optical axis thereof inclined, a second reflector that is a parabolic group reflector located below the first re
7417375 Mercury free metal halide lamp August 26, 2008
In a metal halide lamp, xenon gas having a pressure of at least 3 atmospheres at room temperature and at least a metal halide including indium iodide are sealed in a discharge space not containing mercury. If the volume of the discharge space is denoted by V (mm.sup.3), the electric
7411220 Semiconductor light emitting device and manufacturing method thereof August 12, 2008
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first condu
7410274 Light guiding unit, light guiding unit assembly, and lamp comprising the same August 12, 2008
A light guiding unit is provided which can reflect light from one light source such that a plurality of irradiated lights can be intermittently viewed, while allowing substantially all portions of the plurality of irradiated lights to be substantially uniform. The light guiding unit can
7408647 Surface plasmon resonance sensor device August 5, 2008
Provided is a surface plasmon resonance sensor device having excellent measurement accuracy. The device is equipped with an optical fiber 2,32 for introducing a light incident from one end thereof to the other end, a core exposed portion 3,33a formed to expose core 5,33 of the optical
7404656 Vehicle light July 29, 2008
A vehicle light can include a projector type unit and an ellipse-parabola combined unit that surrounds a light source. Part of the light from the light source is directed toward a projector lens by part of an ellipse group reflecting portion of the projector type unit. The remainder of t
7371593 Method for manufacturing semiconductor light emitting device May 13, 2008
A method for manufacturing a semiconductor light emitting device can result in a device that includes a housing having a cavity, a light emitting element on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity. The wavelength conversion layer can
7348586 Exterior element sensor March 25, 2008
An exterior element sensor can include an optical element mounted on a window. The optical element can include a cylindrical lens having both ends shaped spherically and a central portion that exerts little or no influence on exterior element detection (such as rain, snow, ice, water,
7332862 Led lamp including a resist bonded to a copper film February 19, 2008
In an LED lamp, a copper film is first formed on a substrate by plating. A resist is then bonded onto the copper film so that shaped like a ring viewed from the whole of the LED lamp. A nickel and a gold film are formed on a portion of the copper film where the resist is not bonded.
7325954 Vehicle light February 5, 2008
A vehicle light with a bulb arranged sideway is provided which can reduce a length of the entire light without a deterioration in its brightness and with a simple configuration. The vehicle light can include a light source arranged sideway on an optical axis extending horizontally in the
7322729 Light guiding unit, light guiding unit assembly, and lighting device including the same January 29, 2008
A light guide unit, a light guide unit assembly, and a lighting device are provided which can efficiently use light emitted from a light source and uniformly radiate light from an elongate rectangular radiating surface. The light guide unit has at least one radiation direction in a direc
7317181 Light-emitting unit and method for producing same as well as lead frame used for producing light January 8, 2008
A surface mount type light-emitting unit includes a light-emitting device. A first lead is connected electrically to a first electrode of the light-emitting device. A second lead is connected electrically to a second electrodc of the light-emitting device. A clear insulator seals the
7312477 Led lamp for light source December 25, 2007
Whereas incandescent light bulbs and other similar light sources known in the related art emit light in all directions, LED lamps can emit light in a single direction, and this is manifested in the problem of being unable to achieve light distribution characteristics satisfied by convent
7311429 Vehicle lamp December 25, 2007
A vehicle lamp can include a sidelight source that is provided in a headlight reflector and which is close to the front end and close to the outer circumference. A position reflector can be provided that is almost in the form of a ring in an integral or split state at the front end, and
7309881 Wavelength-converting LED December 18, 2007
A wavelength-converting LED can include a light-emitting section in which an exciting element emits a blue or ultraviolet light. A fluorescent material that has a mean particle diameter D.sub.50 ranging from 5 .mu.m to 20 .mu.m and that can convert at least part of the light emitted from
7300326 LED device and method for manufacturing the same November 27, 2007
An LED device manufacturing method can produce an LED device that can emit light of a given color tone by additive color mixture of light emitted from an LED chip and light obtained by wavelength conversion of the light emitted from the LED chip. The wavelength conversion can be accompli
7292741 Multi-input optical switch November 6, 2007
A multi-input optical switch can include a base plate that carries at least one photo sensor and multiple LEDs which are arranged at positions separated by approximately the same angular interval. A first mask can be formed in an approximately cylindrical shape and can include multiple
7290906 Vehicle lamp and method of use November 6, 2007
A lamp can include LED lamps as a light source. An optical guide path including a first reflecting surface and a second reflecting surface can be provided between the LED lamp and a lens that radiates an illumination light. The optical guide path can be integrally composed of a high-
7288208 Method of manufacturing ZnO substrate from ZnO crystal formed by hydrothermal synthesis method October 30, 2007
Li impurities are removed from a substrate of ZnO formed by a hydrothermal synthesis method. The surface layer of the substrate with Li impurities removed, is etched to planarize the substrate.
7287896 Assembly for an illumination device October 30, 2007
A light access can be integrally formed with a light guide on at least one end of the light guide. A printed circuit board with an LED lamp mounted thereon can be press-fitted in the light access for transient arrangement, and can be fixed by a cover. The position of the printed circ
7285858 Semiconductor device and its manufacture method capable of preventing short circuit of electrode October 23, 2007
A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings
7282785 Surface mount type semiconductor device and lead frame structure thereof October 16, 2007
A surface mount type semiconductor device can be configured to include a pair of lead frames that are butted to each other with a spacing such that ends of the lead frames are opposite to each other. A bare chip can be mounted on a chip mount portion on one end side of one of the lead
7271426 Semiconductor light emitting device on insulating substrate and its manufacture method September 18, 2007
A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing
7266194 Self-lighting type push button input device September 4, 2007
A self-lighting type push-button input device according to the presently disclosed subject matter can include a button base portion formed of a transparent material. Holes can be formed in predetermined positions of the button base portion, and spring portions can be formed integrally
7260123 Semiconductor light-emitting apparatus having wavelength conversion portion and method of fabric August 21, 2007
A semiconductor light-emitting apparatus which has a simple structure can include a base having a concave portion having an upward opening, a semiconductor light-emitting device placed on the bottom of the concave portion, and a wavelength conversion portion for converting the wavele
7258473 Vehicle lamp August 21, 2007
A vehicle lamp can include a first light source located almost at the center of an emission region, and a transparent cover lens arranged to cover the front in the direction of illumination from the first light source. A central reflective portion of the cover lens can be located in
7246930 Light source and vehicle lamp July 24, 2007
A light source for vehicles can include a base having a cavity formed on its upper surface, an LED chip mounted in the cavity of the base, a resin portion for sealing the LED chip in the cavity, an optical member disposed above the base and apart from the LED chip, a light shielding
7244056 Vehicle lamp July 17, 2007
A vehicle lamp can include a light source and a reflector whose first focal position lies in the vicinity of the light source, the reflector preferably includes a concave spheroidal surface that reflects light from the light source frontward. A projection lens can be disposed so that its
7232247 Vehicle lamp June 19, 2007
A vehicle lamp can include a plurality of light source modules each having an LED as a light source, and optical systems for distributing light from each of the light source modules frontward toward predetermined areas or predetermined patterns that are different from each other and whic
7221003 Light emitting device May 22, 2007
A light-emitting device can include a blue LED chip that is covered in a sealing resin composed of a filling resin mixed with a wavelength conversion material, such as a yellow fluorescent material. Light from the blue LED chip is mixed with a light from the yellow fluorescent materi
7193247 Gallium nitride compound semiconductor device March 20, 2007
A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound s
7187867 Optical wireless communication system March 6, 2007
The present invention provides a bilateral communication network system, particularly, a optical wireless communication system communicating information frames via an optical node mounted on a mobile object and a plurality of optical repeaters connected to a wired network, which can
7141825 Semiconductor light emitting device capable of suppressing silver migration of reflection film m November 28, 2006
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed
7134768 LED lamp with light guide November 14, 2006
Light emitted from a plurality of LED light sources can be introduced into a light guide and inwardly reflected (totally reflected) at a first reflective surface formed on the light guide to form a substantially collimated light. The substantially collimated light can then be inwardly
7101072 Photoirradiation device and fiber rod September 5, 2006
A photoirradiation device in which an optical system can be miniaturized and utilization efficiency of light can be improved in a manner that includes a first lens and a second lens, which share refraction of light to convert light beams emitted from a plurality of light sources into the
7094520 Die for molding optical panel, process for production thereof, and use thereof August 22, 2006
An object of the present invention is to provide a die suitable for producing an optical panel having an optical pattern (e.g. dots or lines) integrally formed on at least one side of the optical panel, which is, for example, an edge light panel or a light diffusion panel, which is u
7084422 Semiconductor light emitting device having quantum well layer sandwiched between carrier confine August 1, 2006
The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of c
7078734 Optical semiconductor device July 18, 2006
The present invention is directed to a highly reliable optical semiconductor device (1), which comprises an optical semiconductor chip (2) sealed in a surrounding soft resin (3) and in a hard resin (4) harder than the soft resin. The hard resin (4) has an aperture (7b) configured to
7075114 Light-emitting diode for large current driving July 11, 2006
A light-emitting diode for large current driving (1) is provided according to the invention. It comprises a metal substrate (4) having an upper surface and provided with an electrically insulated distribution circuit (4a) formed on the upper surface. A metal base (3) is directly attached
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