| Patent Number |
Title Of Patent |
Date Issued |
| 7524776 |
Surface-activation of semiconductor nanostructures for biological applications |
April 28, 2009 |
| Means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate compri |
| 7514725 |
Nanophotovoltaic devices |
April 7, 2009 |
| The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic lay |
| 7306963 |
Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices |
December 11, 2007 |
| Methods are disclosed generally directed to design and synthesis of quantum dot nanoparticles having improved uniformity and size. In a preferred embodiment, a release layer is deposited on a semiconductor wafer. A heterostructure is grown on the release layer using epitaxial deposit |
| 7048767 |
Nano-crystalline, homo-metallic, protective coatings |
May 23, 2006 |
| The present invention provides orthopedic prosthesis having at least one metallic component that includes a metallic substrate on which an integrally formed nano-crystalline coating is formed. The coating and the substrate have at least one metallic constituent in common having an av |
| 6661875 |
Catheter tip x-ray source |
December 9, 2003 |
| The present invention provides a catheter having an x-ray generator unit at its tip which generates x-ray radiation having a wavelength in a range effective for treating biological tissue. In one embodiment, the x-ray generator unit includes a miniature x-ray generator and a miniature |
| 6635559 |
Formation of insulating aluminum oxide in semiconductor substrates |
October 21, 2003 |
| The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. |
| 6217615 |
Arthroplasty process for securely anchoring prostheses to bone, and arthroplasty products theref |
April 17, 2001 |
| A synovial prosthetic member includes a body having an articulating surface and an anchor surface, the articulating surface being configured for articulation with another articulating surface of a synovial joint, the anchor surface being configured for cementing to bone, the body being |
| 6051751 |
Arthroplasty process for securely anchoring prostheses to bone, and arthroplasty products theref |
April 18, 2000 |
| A synovial prosthetic member includes a body having an articulating surface and an anchor surface, the articulating surface being configured for articulation with another articulating surface of a synovial joint, the anchor surface being configured for cementing to bone, the body being |
| 6010937 |
Reduction of dislocations in a heteroepitaxial semiconductor structure |
January 4, 2000 |
| A heteroepitaxial semiconductor device having reduced density of threading dislocations and a process for forming such a device. According to one embodiment, the device includes a substrate which is heat treated to a temperature in excess of 1000.degree. C., a film of arsenic formed on t |
| 5726440 |
Wavelength selective photodetector |
March 10, 1998 |
| A wavelength selective photodetector including: a substrate having a buried insulator layer for electrically isolating a lower section of the substrate located below the insulator layer from an upper section of the substrate located above the insulator layer; and a photon detector formed |
| 5671914 |
Multi-band spectroscopic photodetector array |
September 30, 1997 |
| A multi-band spectroscopic photodetector array including a substrate having a buried insulator layer in the substrate for electrically isolating a lower section of the substrate located below the insulator layer form an upper section of the substrate located above the insulator layer; an |
| 5620439 |
Catheter and technique for endovascular myocardial revascularization |
April 15, 1997 |
| A laser treatment device provides an output operating laser beam having a single wavelength which is highly absorbed by tissue of a patient and which beam is non-diverging. The laser treatment device may be a catheter which is inserted into a patient for performing endovascular myocardia |
| 5520664 |
Catheter having a long-lasting antimicrobial surface treatment |
May 28, 1996 |
| Catheters including at least one component having a tissue interfacing surface characterized by a substantially nonleaching surface treatment of antimicrobial metal. The component can be a subcutaneous cuff, and the antimicrobial metal can be silver. The process for implanting the silver |
| 5492763 |
Infection resistant medical devices and process |
February 20, 1996 |
| A medical device provided with a subsurface bacteriostatic/bactericidal stratum to a predetermined depth is disclosed. The bacteriostatic/bactericidal stratum is introduced into the medical device by ion implantation of sufficient concentration to impart thereto the desired bacterios |
| 5474797 |
Bactericidal coatings for implants |
December 12, 1995 |
| Polymeric implants provided with coatings of bactericidal compounds in the form of ionized atoms by a vapor process. The polymeric implants include products designed to penetrate or enter the body, such as catheters, shunts connectors and the like. Coatings of bactericidal compounds on t |
| 5468562 |
Metallized polymeric implant with ion embedded coating |
November 21, 1995 |
| Surface metallized polymeric implants, such as cannula, needles, catheters, connectors and the like, a dry coating method therefor and apparatus to accomplish the same are disclosed. The metallization of the implants is intended to improve their biocompatibility and to reduce infusio |
| 5457356 |
Flat panel displays and process |
October 10, 1995 |
| A flat panel display, such as a head mounted display, and a process for its manufacture are disclosed. Essentially, the flat panel display comprises separately manufactured flat panels including a display material and driver chips that are bump-bonded to the flat panels preferably by usi |
| 5452118 |
Optical heterodyne receiver for fiber optic communications system |
September 19, 1995 |
| A monolithic integrated optical heterodyne receiver circuit formed on a single chip and a process of its manufacture are disclosed. The heterodyne receiver circuit essentially includes a tunable local oscillator formed on a substrate for generating a first light beam, a first waveguide |
| 5436499 |
High performance gaas devices and method |
July 25, 1995 |
| High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by possessing a high degree of electrical insulation, both vertical and lateral, between closely pack |
| 5272355 |
Optoelectronic switching and display device with porous silicon |
December 21, 1993 |
| A solid state optoelectronic switching and display device and a method for its manufacture are disclosed. The device, formed in silicon, essentially is a surface-emitting visible light-emitting diode that allows rapid and efficient switching and information transfer, via optical means, b |
| 5260621 |
High energy density nuclide-emitter, voltaic-junction battery |
November 9, 1993 |
| An electric battery comprises a semiconductor junction incorporating an inorganic crystalline compound of Group III and Group V elements of the Periodic Table characterized by a predetermined annealing temperature for defects therein; a nuclear source of relatively high energy radiation |
| 5236509 |
Modular IBAD apparatus for continuous coating |
August 17, 1993 |
| A modular ion beam assisted continuous coating apparatus and method for a wide range of materials and the products so made are disclosed. The materials include metals, such as all kinds of steels and the like in sheet, wire, tubing and rod forms, and plastics, such as all kinds of po |
| 5231298 |
GaAs device having a strain-free c-doped layer |
July 27, 1993 |
| A device made by a process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT |
| 5223309 |
Ion implantation of silicone rubber |
June 29, 1993 |
| A process to improve the surface properties of products made, at least in part, from silicone rubber is disclosed. The products find uses in industrial and medical device applications, such as drug-pump seals and valves, membranes, mammary prostheses, artificial heart diaphragms, pac |
| 5154023 |
Polishing process for refractory materials |
October 13, 1992 |
| A cost-effective process for polishing refractory materials, including natural and synthetic diamond, sapphire, ruby and Si.sub.3 N.sub.4 balls, is disclosed, wherein the surfaces thereof are successively softened to a predetermined depth by ion implantation, followed by mechanical polis |
| 5152795 |
Surgical implants and method |
October 6, 1992 |
| An improved surgical implant, including dental implants, formed of Ti and its alloys and a process of its manufacture are disclosed. The improved surgical implant is designed to withstand fretting wear and abrasion occasioned by vibrating micromotion of the implant against the surroundin |
| 5133757 |
Ion implantation of plastic orthopaedic implants |
July 28, 1992 |
| A load-bearing plastic orthopaedic joint implant, formed aat least partially of UHMWPE or HDPE material, and a process of subjecting at least the load-bearing surface thereof to ion implantation so as to improve its surface characteristics are disclosed. Such improved surface charact |
| 5123924 |
Surgical implants and method |
June 23, 1992 |
| An improved surgical implant, formed of cobalt-chromium and its alloys in contact with a bearing surface formed by UHMWPE, and a process of its manufacture are disclosed. The improved surgical implant is designed to reduce the wear of the UHMPE component of the surgical implant, enhancin |
| 5118400 |
Method of making biocompatible electrodes |
June 2, 1992 |
| A process of improving the sensing function of biocompatible electrodes and the product so made are disclosed. The process is designed to alter the surfaces of the electrodes at their tips to provide increased surface area and therefore decreased contact resistance at the electrode-tissu |
| 5116455 |
Process of making strain-free, carbon-doped epitaxial layers and products so made |
May 26, 1992 |
| A process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the |
| 5104690 |
CVD thin film compounds |
April 14, 1992 |
| A stream of gaseous source compounds and their ranges of relative ratios useful in the deposition of thin film ferroelectric materials by CVD are disclosed. The stream of gaseous source compounds are used in combination with a CVD reactor flushed with an inert gas and maintained at a |
| 5098483 |
Methods of treating spherical surfaces |
March 24, 1992 |
| Improved methods for the treatment of spherical surfaces designed to improve their physical and chemical properties are disclosed. The methods include the provision of a fixture by which a plurality of spherical workpieces are presented to a treatment source in a way that their entire |
| 5079032 |
Ion implantation of spherical surfaces |
January 7, 1992 |
| An improved method and an apparatus for the ion implantation of spherical surfaces are disclosed. The method includes the provision of a revised fixture by which a plurality of spherical workpieces are presented to a large area ion beam in a way that their entire respective spherical |
| 5076857 |
Photovoltaic cell and process |
December 31, 1991 |
| An improved photovoltaic cell and a process of making it are disclosed. Essentially, the process merges the technology of ESB with the phenomenon of total internal reflection to provide a photovoltaic cell of improved conversion efficiency and comprising a solar cell formed of a semi |
| 5070026 |
Process of making a ferroelectric electronic component and product |
December 3, 1991 |
| An improved process of making a ferroelectric electronic component, such as a non-volatile RAM or an electro-optic switching array, is disclosed. The process essentially includes the separate formation of two subassemblies and then connecting them by placing one on top of the other. Elec |
| 4968006 |
Ion implantation of spherical surfaces |
November 6, 1990 |
| An improved method and an apparatus for the ion implantation of spherical surfaces are disclosed. The method includes the provision of a revised fixture by which a plurality of spherical workpieces are presented to a large area ion beam in a way that their entire respective spherical |
| 4872922 |
Method and apparatus for the ion implantation of spherical surfaces |
October 10, 1989 |
| A method and an apparatus for the ion implantation of spherical surfaces are disclosed. The method essentially includes the provision of a fixture by which a plurality of spherical workpieces are presented to a large area ion beam in a way that their entire respective spherical surfaces |
| 4855026 |
Sputter enhanced ion implantation process |
August 8, 1989 |
| A sputter enhanced ion implantation process is disclosed that uses to advantage the ion beam sputtering phenomenon to deposit layers of coatings on surfaces of interest simultaneously with ion implanting that surface, and that without the use of a separate evaporation system. The process |
| 4771017 |
Patterning process |
September 13, 1988 |
| An improved patterning process, useful for the metallization of highly efficient photovoltaic cells, the formation of X-ray lithography masks in the sub half-micron range, and in the fabrication of VLSI and MMIC devices, is disclosed. The improved patterning process includes the steps |
| 4743493 |
Ion implantation of plastics |
May 10, 1988 |
| An ion implantation process for plastics is disclosed which materially enhances their surface hardness and their resistance to chemical attack. The plastics include the polycarbonates, the acrylics and their combinations, and ultra high molecular weight polyethylenes. The plastics ar |
| 4743308 |
Corrosion inhibition of metal alloys |
May 10, 1988 |
| A metal alloy with a treated surface and the process of effecting the treated surface are disclosed whereby its ion release under static, stress and crevice corrosion and corrosive wear conditions is reduced. The metal alloy preferably is an ASTM F-75 Co-Cr-Mo alloy. The preferred proces |
| 4741354 |
Radial gas manifold |
May 3, 1988 |
| An improved radially designed gas manifold is disclosed for the precise mixing and admission of a plurality of gases into a processing chamber, and being characterized by rapid switching from one gas to another or from one set of gas mixture to another set of gas mixture, and yet occupyi |
| 4693760 |
Ion implanation of titanium workpieces without surface discoloration |
September 15, 1987 |
| A process for preventing surface discoloration in orthopedic implants made of titanium and its alloys is disclosed. Such surface discoloration is apt to occur when the orthopedic implants are ion implanted to improve their wear characteristics. The process essentially includes exposing a |
| 4676845 |
Passivated deep p/n junction |
June 30, 1987 |
| A passivated deep p/n junction obtained by ion implantation is disclosed. The passivated deep p/n junction is formed in a wafer, preferably a silicon wafer, thus providing an emitter region that is both lightly doped and extending to a depth of about one micrometer. The emitter region in |
| 4667060 |
Back junction photovoltaic solar cell |
May 19, 1987 |
| A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resista |
| 4620364 |
Method of making a cross-grooved solar cell |
November 4, 1986 |
| A solar cell of improved conversion efficiency and a process of making it are disclosed. The solar cell is designed to trap incident light within the cell by multiple internal reflections and thus increases the absorption of light in the cell. The solar cell is formed with a plurality |
| 4608451 |
Cross-grooved solar cell |
August 26, 1986 |
| A solar cell of improved conversion efficiency and a process of making it are disclosed. The solar cell is designed to trap incident light within the cell by multiple internal reflections and thus increases the absorption of light in the cell. The solar cell is formed with a plurality |
| 4604292 |
X-ray mask blank process |
August 5, 1986 |
| An improved process, optimizing quality and growth rate with independent control of residual stress, is disclosed for the growing of membranes for use as X-ray lithography mask blanks. The process comprises providing a mounting fixture and a low-cost substrate material thereon, cooling t |
| 4596208 |
CVD reaction chamber |
June 24, 1986 |
| An improved reaction chamber for CVD is disclosed that combines the advantageous features of the known horizontal and vertical designs while minimizing their respective short comings. The improved reaction chamber essentially comprises a vertical, double-walled reaction tube having a |
| 4526673 |
Coating method |
July 2, 1985 |
| A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns.T |
