| Patent Number |
Title Of Patent |
Date Issued |
| 5508206 |
Method of fabrication of thin semiconductor device |
April 16, 1996 |
| Thin semiconductor devices, such as thin solar cells, and a method of fabricating same are disclosed. A microblasting procedure is employed to thin a semiconductor wafer or substrate, such as a solar cell wafer, wherein fine abrasive particles are used to etch away wafer material thr |
| 5460659 |
Concentrating photovoltaic module and fabrication method |
October 24, 1995 |
| A solar cell assembly is fabricated by adapting efficient microelectronics assembly techniques to the construction of an array of small scale solar cells. Each cell is mounted on an individual carrier, which is a conventional integrated circuit (IC) package such as a dual-in-line pac |
| 5425816 |
Electrical feedthrough structure and fabrication method |
June 20, 1995 |
| In an electrical via structure and fabrication method that is particularly suited to coplanar contact solar cells, an initial opening (38,48a,48b,64) through the substrate is coated and substantially closed with a dielectric material (42,52,80). An inner opening (44) is then formed throu |
| 5391236 |
Photovoltaic microarray structure and fabrication method |
February 21, 1995 |
| A photovoltaic microarray such as a solar cell array is monolithically fabricated, without a supporting substrate, by forming a network of trenches from one side of a substrate to define separate cell areas, filling the trenches with an insulative filler material that adheres to the |
| 5330585 |
Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic cont |
July 19, 1994 |
| A photocell (40) includes a photovoltaic or otherwise photosensitive layer structure (44) on which a passivation or window layer (52) of an environmentally sensitive material such as aluminum gallium arsenide (AlGaAs) and an antireflection (AR) coating (54) are formed. An electricall |
| 5100808 |
Method of fabricating solar cell with integrated interconnect |
March 31, 1992 |
| A pattern of current collection gridlines (24) is formed on a surface (20) of a photovoltaic wafer (12). An ohmic contact strip (28) is formed adjacent to an edge (12c) of the wafer (12) in electrical interconnection with the gridlines (24). Interconnect tabs (30) are integrally formed w |
| 5034068 |
Photovoltaic cell having structurally supporting open conductive back electrode structure, and m |
July 23, 1991 |
| A photoresponsive layer formed of a semiconductive material such as gallium arsenide has differently doped strata which define a junction therebetween, and generates a photovoltaic effect in response to light incident on a front surface thereof. A front electrode is formed on the fro |
| 4838952 |
Controlled reflectance solar cell |
June 13, 1989 |
| A solar cell is disclosed wherein both the emitter and the base electrical contacts for a solar cell are disposed on the back major surface. Holes extend through the back major surface and the base layer to the emitter layer. The walls of the holes are doped to the same conductivity as t |
| 4829269 |
Harmonic plasma switch |
May 9, 1989 |
| A system for protecting a radiation-responsive device, such as an infrared sensor in an imaging system includes a plasma switch operative in response to amplitude of incident radiation. The protection system is suitable for protecting the infrared sensor from a high-intensity laser beam |
| 4710254 |
Process for fabricating a solar energy converter employing a fluorescent wavelength shifter |
December 1, 1987 |
| Disclosed herein is a solar converter structure and fabrication process therefor which includes a composite zinc selenide fluorescent wavelength shifter (FWS) prepared with anti-reflective (AR) coatings on both major surfaces thereof. One of these AR coatings is adhesively bonded to an A |
| 4703553 |
Drive through doping process for manufacturing low back surface recombination solar cells |
November 3, 1987 |
| A method for providing deep impurity doped regions under the back contacts of a solar cell. In a semiconductor wafer with a p-n junction therein defining an n+ layer emitter and p-type layer bulk, a p+ layer is formed in the p-type layer under the back surface of the wafer. An oxide |
| 4698455 |
Solar cell with improved electrical contacts |
October 6, 1987 |
| A gallium arsenide solar cell is disclosed which employs a front aluminum gallium arsenide window layer. Metallic grid lines for charge carrier collection traverse the window layer and extend through this layer to the emitter layer. A flat conductive bar on the window layer crosses and m |
| 4694115 |
Solar cell having improved front surface metallization |
September 15, 1987 |
| A gallium arsenide solar cell is disclosed having an aluminum gallium arsenide window layer in which fine metallic contact lines extend through the aluminum gallium arsenide window to electrically contact the emitter layer, and a plurality of metallic grid lines disposed on the window la |
| 4385430 |
Method of forming an energy concentrator |
May 31, 1983 |
| A focusing multi-point high-concentrator optical system is disclosed. The system is useful for concentrating energy such as solar radiation for use in solar energy conversion systems. The configuration of the optical system incorporates thin metallized Fresnel reflector elements applied |
