| Patent Number |
Title Of Patent |
Date Issued |
| 4617421 |
Photovoltaic cell having increased active area and method for producing same |
October 14, 1986 |
| An improved large area photovoltaic device includes a plurality of electrically interconnected smaller area cells. The smaller area cells each have a laterally disposed bus bar and are disposed in overlapping relationships so that the bus bar of a given cell is beneath the substrate |
| 4609771 |
Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor |
September 2, 1986 |
| A p-doped microcrystalline silicon alloy material incorporated into a tandem photovoltaic device. |
| 4608943 |
Cathode assembly with localized profiling capabilities |
September 2, 1986 |
| An improved cathode assembly specifically designed to provide for the uniform, localized profiling of dopant or other alterant elements into the host matrix of a semiconductor alloy material which is continuously and uniformly deposited onto a moving substrate by a glow discharge deposit |
| 4601260 |
Vertical semiconductor processor |
July 22, 1986 |
| A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about |
| 4600801 |
Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
July 15, 1986 |
| A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material. |
| 4566403 |
Apparatus for microwave glow discharge deposition |
January 28, 1986 |
| Apparatus for microwave energized glow discharge deposition of materials, onto a substrate including electronic structures having a plurality of layers of amorphous semiconducting alloys of varying conductivity types. The apparatus includes at least one deposition chamber in which a nove |
| 4547621 |
Stable photovoltaic devices and method of producing same |
October 15, 1985 |
| An improved photovoltaic device characterized by long term stability in its photoconversion ability. The device is adapted to absorb incident light throughout a substantial portion of the bulk of the photoactive region thereof in a substantially uniform manner. Said uniform absorption of |
| 4545136 |
Isolation valve |
October 8, 1985 |
| A valve for isolating the interior of a glow discharge chamber from the atmosphere and other reactants. The valve includes a body mounted in an aperture of the chamber. A slit-like opening is provided therein to allow the interior of the chamber to communicate with interrelated elements |
| 4544798 |
Photovoltaic panel having enhanced conversion efficiency stability |
October 1, 1985 |
| A photovoltaic panel for converting light into electrical energy has enhanced energy conversion efficiency stability. The panel includes a photovoltaic device having an active region formed from a semiconductor material which exhibits an energy conversion efficiency stability directly |
| 4542711 |
Continuous system for depositing amorphous semiconductor material |
September 24, 1985 |
| A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup sections provide reel-to-reel advancement of a thin film substrate through the system. At least one chamber is located between the feed and takeup sections. A p |
| 4537795 |
Method for introducing sweep gases into a glow discharge deposition apparatus |
August 27, 1985 |
| A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition cham |
| 4522663 |
Method for optimizing photoresponsive amorphous alloys and devices |
June 11, 1985 |
| The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys and devices. The adjus |
| 4521447 |
Method and apparatus for making layered amorphous semiconductor alloys using microwave energy |
June 4, 1985 |
| An apparatus and process utilizes microwave energy for depositing amorphous alloy materials in layered form onto a receiving surface. The process results in materials having unique properties suitable for many applications including photovoltaic applications. The process includes the |
| 4520380 |
Amorphous semiconductors equivalent to crystalline semiconductors |
May 28, 1985 |
| An amorphous semiconductor body, most advantageously a glow discharge deposited silicon-containing host matrix film, is provided containing at least fluorine as a compensating or altering agent, and most preferably at least one complementary compensating or altering agent, such as hydrog |
| 4520039 |
Compositionally varied materials and method for synthesizing the materials |
May 28, 1985 |
| Designed tailormade nonequilibrium synthetic disordered materials are provided containing nonperiodically distributed local environments whose position and type are controlled to obtain specific properties which can be coupled or decoupled one from another and collectively from the c |
| 4519339 |
Continuous amorphous solar cell production system |
May 28, 1985 |
| The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of deposition chambers. Each of the chambers is dedicated to a specific material type deposition. T |
| 4517223 |
Method of making amorphous semiconductor alloys and devices using microwave energy |
May 14, 1985 |
| A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electronic properties suitable for many applications including photovoltaic applications.The process includ |
| 4515107 |
Apparatus for the manufacture of photovoltaic devices |
May 7, 1985 |
| An apparatus for manufacturing photovoltaic devices of the type including a plurality of layers of semiconductor materials deposited onto a substrate includes a plurality of deposition chambers, each chamber arranged to deposit a respective one of the layers of semiconductor materials on |
| 4510675 |
System for eliminating short and latent short circuit current paths in photovoltaic devices |
April 16, 1985 |
| Systems and methods for detecting and eliminating latent and existing short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one |
| 4510674 |
System for eliminating short circuit current paths in photovoltaic devices |
April 16, 1985 |
| Systems and methods for detecting and eliminating short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region a |
| 4492810 |
Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices |
January 8, 1985 |
| The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants i |
| 4492181 |
Apparatus for continuously producing tandem amorphous photovoltaic cells |
January 8, 1985 |
| A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic solar cells on substrate material, whereby, at least six amorphous layers are continuously and sequentially deposited on the substrate material under steady conditions. The substrat |
