| Patent Number |
Title Of Patent |
Date Issued |
| 5370077 |
Single crystal rod pull-up growing apparatus |
December 6, 1994 |
| The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the |
| 5269875 |
Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in t |
December 14, 1993 |
| Used in a Si crystal pulling apparatus using the Czochralski method, to lower the concentration of oxygen in the Si single crystal without increasing the production cost and to make the concentration substantially even all over the Si single crystal. The crystal 36 is produced by dis |
| 5240684 |
Crystal diameter measuring device |
August 31, 1993 |
| A device for measuring the diameter of the growing portions of the single crystals grown by the Czochralski technique is provided. This device is capable of measuring the crystal diameter with a high degree of accuracy over a wide range from the small-diameter portion thereof to the larg |
| 5223078 |
Conical portion growth control method and apparatus |
June 29, 1993 |
| A conical portion growth control method and an apparatus used in the method grow a conical portion 32B of a single crystal rod 32 by pulling the crystal rod from a melt 16 heated by a heater 14 in the Czochralski method, and aim to enhance reproducibility of the shape of the conical |
| 5205080 |
Jig for clamp-positioning single crystal ingot |
April 27, 1993 |
| A jig is provided for accurately and easily positioning a single crystal ingot with respect to the clamp rotary shafts of a device for grinding the peripheral surface of the ingot. The jig includes male positioning fixtures 10L and 10R and female positioning fixtures 32L and 32R. In the |
| 5201145 |
Monocrystal ingot attitude-adjusting/surface-grinding/conveying apparatus |
April 13, 1993 |
| A monocrystal ingot conveying/surface grinding apparatus has a plurality of surface grinding devices 221A to 225A disposed serially, a rail 16A disposed adjacent to the ceiling along the devices, a conveying/attitude-adjusting device 20A guided by the rail 16A and having an X-Y-.thet |
| 5183528 |
Method of automatic control of growing neck portion of a single crystal by the CZ method |
February 2, 1993 |
| A method for automatically controlling growing a single crystal neck portion by the CZ method, comprising the steps of pulling up a seed crystal (30) at 2 mm/min. for five minutes so as to grow a single crystal 32; next measuring a diameter of the lower end of the crystal; modifying |
| 5170061 |
Method of and apparatus for measuring oscillation of the outside diameter of a melt surface |
December 8, 1992 |
| A method and an apparatus for measuring oscillation of a melt surface in growing a single crystal by Czochralski process, particularly in growing and pulling a crystal neck portion having a small diameter of 2 to 5 mm. The image of a region where the single crystal is being grown by the |
| 5138179 |
Method of and device for diameter measurement used in automatically controlled crystal growth |
August 11, 1992 |
| Disclosed are a method of and a device for crystal diameter measurement in an apparatus for automatically controlling single crystal growth by the CZ technique. In the diameter measurement method, a growing region of a single crystal 32 is photographed by a camera 38, and an outer diamte |
| 5089239 |
Wire vibration prevention mechanism for a single crystal pulling apparatus |
February 18, 1992 |
| A single crystal pulling apparatus having a wire which is used to pull a crystal is provided with a novel wire vibration prevention mechanism. The wire vibration prevention mechanism includes wire restriction devices which restrict the movement of the wire to movement in the vertical |
| 5089238 |
Method of forming a temperature pattern of heater and silicon single crystal growth control appa |
February 18, 1992 |
| Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired quality, the diameter of the Si single crystal is controlled by controlling the pull-up speed of the Si single cry |
| 5020907 |
Axis offset measuring device |
June 4, 1991 |
| A device for measuring offset of the axis of a single crystal lifting wire with respect to the axis of rotation of a crucible rotary shaft in a single crystal production apparatus based upon Czochralski method. The apparatus comprises a base plate (16, 16A, 16B) mounted on a table (12) |
| 5009864 |
Recharging device for czochralski method |
April 23, 1991 |
| A recharging device suitable for use in a Czochralski-type monocrystal ingot pulling apparatus, includes a shaft (3) which is suspended from a pulling element (1), a ring slider (8) capable of sliding along the shaft, a stopper (20) for stopping the downward movement of the ring slider, |
| 5007204 |
Apparatus for shaping ingots into right circular cylindrical form |
April 16, 1991 |
| An apparatus for smoothing the surface of a monocrystal ingot comprising a center axis finding device, an external cylindrical grinding unit, an ingot setting unit, and an automatic diameter control unit which controls the grinding amount of the external cylindrical grinding unit respons |
| 4984392 |
Chamfering the notch of a semiconductor wafer |
January 15, 1991 |
| A notch-cut semiconductor wafer whose notch has its both corners entirely chamfered, and an apparatus and method for chamfering the notch as such, which employs a positioning device for positioning the wafer such that the notch of the wafer points in a predetermined direction; a conveyor |
| 4969745 |
Device for measuring offset of axis of crystal lifting wire |
November 13, 1990 |
| A device used in a single-crystal production apparatus based on Czochralski method and designed for measuring the offset of the wire for lifting the growing crystal. In order to enable an easy and appropriate mounting and adjustment of the crystal lifting wire, while preventing abnormal |
| 4951422 |
External cylindrical grinding unit |
August 28, 1990 |
| An external cylindrical grinding unit which comprises a supporting system for supporting a cylindrical body to be ground, a measurement system for measuring the cylindrical body, an arithmetic system for calculating an optimal center axis of the cylindrical body based on the measurement |
| 4935046 |
Manufacture of a quartz glass vessel for the growth of single crystal semiconductor |
June 19, 1990 |
| A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucibl |
| 4934104 |
Cone tail chuck apparatus, and a method for using the same apparatus |
June 19, 1990 |
| A cone tail chuck apparatus for chucking a conical body comprising: a plurality of abrasive stones arranged in a circle; a first drive device for causing the abrasive stones to spin; a second drive device for causing the abrasive stones to move centripetally (inwardly); and a frame,which |
| 4931945 |
Method of controlling floating zone |
June 5, 1990 |
| A method of controlling a floating zone applied to a crystal manufacturing system based on the FZ method and designed to enable the diameter at the crystallization boundary and the axial length of the floating zone or other similar quantities to desired values, in which a floating zone ( |
| 4926357 |
Apparatus for measuring diameter of crystal |
May 15, 1990 |
| An apparatus is used in the production of a monocrystalline rod by Czochralski method and is adapted for measuring the diameter of the monocrystalline rod at the melt surface of the melt by processing image signal derived from an image sensor. The measurement of the diameter is condu |
| 4916955 |
Crystal ingot lifting load measuring device |
April 17, 1990 |
| A load measuring device for measuring the pulling up load of a monocystalline rod (38) grown by the Czochralski method utilizes a strain gauge (20). The monocrystalline rod (38) is pulled up by wire rope (36) consisting of multiple strands. The pulley (34) guiding the wire rope betwe |
| 4905425 |
Method for chamfering the notch of a notch-cut semiconductor wafer |
March 6, 1990 |
| A notch-cut semiconductor wafer whose notch has its both corners entirely chamfered, and an apparatus and method for chamfering the notch as such, which employs a positioning device for positioning the wafer such that the notch of the wafer points in a predetermined direction; a conveyor |
| 4905058 |
Light-emitting semiconductor device |
February 27, 1990 |
| In a light-emitting semiconductor device of double heterostructure consisting of GaAlAs mixed crystal, a film of Ga.sub.1-y Al.sub.y As having a thickness less than 1 .mu.m is sandwiched in between a p-type clad layer of mixed crystal Ga.sub.1-x1 Al.sub.xl As and an n-type clad layer |
