| Patent Number |
Title Of Patent |
Date Issued |
| D338991 |
Wafer basket |
August 31, 1993 |
|
| 7622312 |
Method for evaluating dopant contamination of semiconductor wafer |
November 24, 2009 |
| The present invention provides a method for evaluating dopant contamination of a semiconductor wafer, wherein a resistivity of a bulk portion of the semiconductor wafer is measured by an eddy current method, a resistivity in a surface layer of the semiconductor wafer is measured by a |
| 7615116 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
November 10, 2009 |
| In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted. |
| 7608548 |
Method for cleaning a multilayer substrate and method for bonding substrates and method for prod |
October 27, 2009 |
| Disclosed is a method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, where the SiGe layer is an outermost surface of the SiGe layer and then cleaning the multilayer |
| 7601613 |
Manufacturing method of bonded wafer |
October 13, 2009 |
| In a first ion implantation step (a1), a delamination-intended ion implantation layer 3 is formed by implanting ions at a dosage less than a critical dosage from the insulating film 2 side of a bond wafer 1. In an additional function layer deposition step (b2), an additional function |
| 7594966 |
Method for producing a single crystal |
September 29, 2009 |
| A method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber according to the Czochralski method, including pulling a single crystal having a defect-free region, which is outside an OSF region, to occur in a ring shape in the radial direction, |
| 7591908 |
Vapor deposition apparatus and vapor deposition method |
September 22, 2009 |
| In a vapor phase growth apparatus for performing a vapor phase growth of a silicon epitaxial layer on a main surface of a silicon single crystal substrate while heating the silicon single crystal substrate placed on a pocket formed on a susceptor, from both sides, the pocket has an outer |
| 7591713 |
Polishing pad, method for processing polishing pad, and method for producing substrate using it |
September 22, 2009 |
| The present invention is a polishing pad used for polishing a semiconductor substrate, wherein, at least, grooves having a radial pattern are formed on a surface of the polishing pad, and (an average value of the sum totals of the groove volumes in parts immediately below the substra |
| 7589352 |
Light emitting device |
September 15, 2009 |
| A light emitting element (100) comprising an element chip (100C) provided, at least in a partial section in the thickness direction thereof, with a part of reduced cross-section where the cross sectional area decreases continuously or stepwise in the direction perpendicular to the thickn |
| 7582221 |
Wafer manufacturing method, polishing apparatus, and wafer |
September 1, 2009 |
| The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirro |
| 7582159 |
Method for producing a single crystal |
September 1, 2009 |
| A method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein in which a range of a pulling rate of pulling a single crystal, a temperature gradient at a solid-liquid interface and a highest temperature at an interface between |
| 7579205 |
Method of fabricating light emitting device and thus-fabricated light emitting device |
August 25, 2009 |
| A light emitting device wafer having a light emitting layer section 24 having an AlGaInP-base double heterostructure, and a GaP light extraction layer 20 disposed on the light emitting layer section so as to allow a first main surface thereof to compose a first main surface of the wafer |
| 7560313 |
SOI wafer and method for producing the same |
July 14, 2009 |
| The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-s |
| 7553685 |
Method of fabricating light-emitting device and light-emitting device |
June 30, 2009 |
| A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers |
| 7550309 |
Method for producing semiconductor wafer |
June 23, 2009 |
| The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a Si.sub.1-XGe.sub.X layer (0<X<1) on an SOI wafer, forming a Si.sub.1-YGe.sub.Y layer (0.ltoreq.Y<X) on the epitaxially grown Si.sub.1-XGe.sub.X layer, and |
| 7531425 |
Method of fabricating bonded wafer |
May 12, 2009 |
| This invention relates to a method of fabricating a bonded wafer 39 in which a bond wafer 31 and a base wafer 32, both of which are composed of silicon single crystal, are bonded while placing an oxide film 33 in between, and the bond wafer 31 is thinned. Use of modified chemically-e |
| 7525327 |
Apparatus for evaluating semiconductor wafer |
April 28, 2009 |
| An apparatus for evaluating an electric characteristic of a semiconductor wafer including, at least, a wafer cassette section on which a wafer cassette for storing the semiconductor wafer that is an object to be evaluated is placed, a wafer pretreatment section for pretreating the se |
| 7524744 |
Method of producing SOI wafer and SOI wafer |
April 28, 2009 |
| The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to con |
| 7521334 |
Method for producing direct bonded wafer and direct bonded wafer |
April 21, 2009 |
| A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded |
| 7521265 |
Method for measuring an amount of strain of a bonded strained wafer |
April 21, 2009 |
| In a method for measuring an amount of strain of a bonded strained wafer, at least one strained layer is formed on a single crystal substrate. The bonded strained wafer is measured with respect to two asymmetric diffraction planes with diffraction plane indices (XYZ) and (-X-YZ) by an |
| 7518187 |
Soi wafer and a method for producing the same |
April 14, 2009 |
| The present invention is an SOI wafer in which at least a silicon active layer is formed over a support substrate via an insulator film or on a support substrate directly, wherein, at least, the silicon active layer consists of a P(phosphorus)-doped silicon single crystal grown by Cz |
| 7511314 |
Light emitting device and method of fabricating the same |
March 31, 2009 |
| Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 .mu.m which is formed on at least one major surface side |
| 7507146 |
Method for producing semiconductor wafer and semiconductor wafer |
March 24, 2009 |
| The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a cham |
| 7484958 |
Vertical boat for heat treatment and method for producing the same |
February 3, 2009 |
| A vertical boat 10 for heat treatment comprising a top plate 1, a bottom plate 2, and a column member fixed between the top plate and the bottom plate, a plurality of grooves 8 being formed in the column member, and a supporting part for horizontally supporting a wafer-like body to be |
| 7479187 |
Method for manufacturing silicon epitaxial wafer |
January 20, 2009 |
| A silicon epitaxial wafer manufacturing method, in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate (W) arranged in the reaction chamber (12). A silicon deposit deposited in the reaction chamber (12) is removed |
| 7474386 |
Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluatio |
January 6, 2009 |
| There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness |
| 7459720 |
Single crystal wafer and solar battery cell |
December 2, 2008 |
| The present invention provides a single crystal wafer, wherein the main surface has a plane or a plane equivalent to a plane tilting with respect to a [100] axis of single crystal by angles of .alpha. (0.degree.<.alpha.<90.degree.) for the [011] direction, .beta. (0.degree.< |
| 7435662 |
Method for manufacturing SOI wafer |
October 14, 2008 |
| The present invention provide a method for manufacturing an SOI wafer which suppresses voids from being generated in an SOI wafer, especially, in an outer peripheral portion thereof to achieve high productivity. According to the present invention, in a method for manufacturing an SOI |
| 7411274 |
Silicon semiconductor substrate and its manufacturing method |
August 12, 2008 |
| The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and |
| 7407866 |
Soi wafer and a method for producing the same |
August 5, 2008 |
| An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski metho |
| 7396405 |
Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal |
July 8, 2008 |
| There is disclosed a single crystal obtained by a single crystal pulling method, wherein an interval of striations incorporated into the single crystal due to temperature fluctuation of crystal melt at the time of crystal growth is controlled, and a method of growing a single crystal |
| 7393207 |
Wafer support tool for heat treatment and heat treatment apparatus |
July 1, 2008 |
| The present invention provides a wafer support tool for heat treatment easy in working and capable of realizing reduction in cost without generating damages or slip dislocations that would be otherwise caused by high temperature heat treatment and a heat treatment apparatus. The pres |
| 7384477 |
Method for producing a single crystal and a single crystal |
June 10, 2008 |
| The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G |
| 7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
May 27, 2008 |
| It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less.A method for producing a silicon |
| 7365830 |
Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluatio |
April 29, 2008 |
| There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness |
| 7361219 |
Method for producing silicon wafer and silicon wafer |
April 22, 2008 |
| The present invention are a method for producing a silicon wafer having a crystal orientation <110> from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be dislocation-free b |
| 7357839 |
SOI wafer and a method of producing the same |
April 15, 2008 |
| The present invention provides an SOI wafer having at least an SOI layer, in which a plain orientation of the SOI layer is off-angled from {110} only in a direction to <100>, and an off-angle is from 5 minutes to 2 degrees, and a method of producing an SOI wafer comprising at least |
| 7355114 |
Solar cell and its manufacturing method |
April 8, 2008 |
| An OECO solar cell using a semiconductor single crystal substrate having a plurality of grooves, wherein a minimum groove depth h of each groove always satisfies the relation of h.gtoreq.W.sub.1tan .theta. where .theta. represents an angle between a line connecting the lower end, alo |
| 7332437 |
Method for processing semiconductor wafer and semiconductor wafer |
February 19, 2008 |
| There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed |
| 7332364 |
Method of fabricating a Zn-base semiconductor light emitting device |
February 19, 2008 |
| A p-n junction interface 3 is formed between an n-type ZnTe.sub.1-xO.sub.x (0.5.ltoreq.x.ltoreq.1) layer 8 and a p-type ZnTe.sub.1-xO.sub.x (0.ltoreq.x<0.5) layer 7, and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side |
| 7326658 |
Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer |
February 5, 2008 |
| The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is subjected to a high temperature heat treatment at 1100.degree. C. to 1350.degree. C. in an a |
| 7326395 |
Method for producing a single crystal and silicon single crystal wafer |
February 5, 2008 |
| The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide c |
| 7323048 |
Method for producing a single crystal and a single crystal |
January 29, 2008 |
| A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal inclu |
| 7320929 |
Method of fabricating SOI wafer |
January 22, 2008 |
| In order to adjust thickness of a bonded silicon single crystal film 15 depending of thickness of an SOI layer 5 to be obtained, depth of formation d1+tx of a separatory ion implanted layer 4, measured from a first main surface J, in the separatory ion implanted layer formation step |
| 7315064 |
Bonded wafer and method of producing bonded wafer |
January 1, 2008 |
| The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of |
| 7311888 |
Annealed wafer and method for manufacturing the same |
December 25, 2007 |
| The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a wafer bulk layer in which oxide precipitates are present at a high density at the stage |
| 7294779 |
Solar cell and method for producing the same |
November 13, 2007 |
| A solar cell 1 has a number of grooves 2 formed in parallel with each other on a first main surface 24a of a silicon single crystal substrate. An electrode 6 is formed on the inner side face of each groove 2 on one side. Each groove 2 is formed in the direction in disagreement with the |
| 7294196 |
Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single cry |
November 13, 2007 |
| In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually |
| 7291055 |
Wafer polishing method and apparatus |
November 6, 2007 |
| The present invention provides a wafer polishing method and a polishing apparatus which are capable of preventing peripheral sags of a wafer due to polishing and then manufacturing the wafer, especially an SOI wafer at a high flatness level. There is provided a wafer polishing method usi |
| 7276427 |
Method for manufacturing SOI wafer |
October 2, 2007 |
| The present invention provides a manufacturing method for an SOI wafer with a high productivity in which generation of a void is suppressed in manufacturing the SOI wafer. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an |
