Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
8212488 Element substrate and light emitting device July 3, 2012
A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and
8212364 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appli July 3, 2012
The present invention is directed to a semiconductor device having: an interposer; a wiring provided on the interposer; a first chip having a first semiconductor device, a first pad and a first solder ball over the interposer, the first semiconductor device being connected to the first
8212304 Method for deleting data from NAND type nonvolatile memory July 3, 2012
To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for dele
8212302 Nonvolatile semiconductor memory device July 3, 2012
A nonvolatile semiconductor memory device which is superior in writing property and charge holding property, including a semiconductor substrate in which a channel formation region is formed between a pair of impurity regions, and a first insulating layer, a floating gate, a second i
8212284 Display device and manufacturing method of the display device July 3, 2012
It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a g
8212280 Light-emitting element and display device July 3, 2012
There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or
8212257 Semiconductor device July 3, 2012
Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor (105), a charge equivalent to a threshold value of a TFT (104) is stored. When a signal is inputted thereto, the thresh
8212254 Thin film transistor, manufacturing method thereof, and semiconductor device July 3, 2012
By a laser crystallization method, a crystalline semiconductor film in which grain boundaries are all in one direction is provided as well as a manufacturing method thereof. In crystallizing a semiconductor film formed over a substrate with linear laser light, a phase-shift mask in w
8212238 Semiconductor device and manufacturing method thereof July 3, 2012
An object of the present invention to provide a semiconductor device having a highly functional memory element with improved reliability, and to provide a technique for manufacturing such a highly reliable semiconductor device with a high yield at low cost without complicating an app
8211780 Method for manufacturing SOI substrate July 3, 2012
Adhesion defects between a single crystal semiconductor layer and a support substrate are reduced to manufacture an SOI substrate achiving high bonding strength between the single crystal semiconductor layer and the support substrate. Plasma is produced by exciting a source gas, ion
8207915 Display device and driving method thereof June 26, 2012
It is provided a display device that prevents, when applying a reverse bias, an anode line and a power supply line included in a signal line driver circuit from being short-circuited, and a driving method thereof. According to the invention, a reverse bias applying circuit is provided
8207908 Display module, and cellular phone and electronic device provided with display module June 26, 2012
It is an object to achieve downsizing and a thin shape of a display module and an electronic device provided with the display module. The display module includes a first display panel in which a first display screen is formed on one main side; and a second display panel that is small
8207756 Logic circuit and semiconductor device June 26, 2012
In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which
8207591 Photoelectric conversion device June 26, 2012
A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer
8207589 Photoelectric conversion device and electronic device, and method for manufacturing photoelectri June 26, 2012
A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end
8207555 Light-emitting element and light emitting device using the same June 26, 2012
The present invention provides a light-emitting element having less increase in driving voltage with the accumulation of light-emission time, and provides a light-emitting element having less increase in resistance value with the increase in film thickness. A light-emitting element i
8207540 Light-emitting element, light-emitting device, lighting device, and electronic device June 26, 2012
An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a
8207538 Thin film transistor June 26, 2012
A thin film transistor includes a first insulating layer covering the gate electrode layer; source and drain regions which at least partly overlaps with the gate electrode layer; a pair of second insulating layers which is provided apart from each other in a channel length direction
8207537 Display device June 26, 2012
A display device according to the present invention includes a barrier layer formed over the transistor and a planarization layer formed over the barrier layer. The planarization layer has an opening and an edge portion of the planarization layer formed at the opening of the planariz
8207536 Semiconductor device and fabrication method thereof June 26, 2012
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabr
8207533 Electronic device, semiconductor device and manufacturing method thereof June 26, 2012
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, select
8207487 Photoelectric conversion device including charge/discharge circuit June 26, 2012
In order to improve resolution to the illuminance of light, the present invention comprises a photoelectric conversion circuit for generating a first current in accordance with illuminance of incident light, a charge/discharge circuit whose electrical capacitance changes in accordanc
8207045 Method for manufacturing SOI substrate June 26, 2012
An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the
8207026 Manufacturing method of thin film transistor and manufacturing method of display device June 26, 2012
To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second
8207025 Manufacturing method of semiconductor device June 26, 2012
In an embodiment, an insulating film is formed over a flat surface; a mask is formed over the insulating film; a slimming process is performed on the mask; an etching process is performed on the insulating film using the mask; a conductive film covering the insulating film is formed; a
8207024 Display device June 26, 2012
At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous s
8207014 Method for manufacturing semiconductor device June 26, 2012
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semicondu
8207011 Method of manufacturing photoelectric conversion device June 26, 2012
Provided is a technique for manufacturing a photoelectric conversion element using a dense crystalline semiconductor film without a cavity between crystal grains. A method of manufacturing a photoelectric conversion device having a first electrode, a unit cell, and a second electrode
8207010 Method for manufacturing photoelectric conversion device June 26, 2012
It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoele
8206507 Evaporation method, evaporation device and method of fabricating light emitting device June 26, 2012
The invention provides an evaporation apparatus, which is able to improve an efficiency of evaporation materials, uniformity of deposited films, and throughput of the evaporation process. Disclosed is an evaporation source holder, which is installed in an evaporation chamber and conf
8205801 Semiconductor device having wireless communication function June 26, 2012
A semiconductor device includes a memory portion, a logic portion, and a plurality of signal lines for electrically connecting the memory portion and the logic portion. In the case where a transfer rate between the semiconductor device and a communication device is .alpha. [bps], a first
8203686 Liquid crystal display device comprising a microstructure and method for manufacturing the same June 19, 2012
To improve the response speed of liquid crystal molecules when a liquid crystal display device is changed from an on state to an off state. A liquid crystal display device that includes a liquid crystal material between a substrate and a counter substrate; a plurality of pixels over
8203147 Display device June 19, 2012
A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a ca
8203142 Memory device and semiconductor device June 19, 2012
A memory device capable of data writing at a time other than during manufacturing is provided by using a memory element including an organic material. In a memory cell, a third conductive film, an organic compound, and a fourth conductive film are stacked over a semiconductor film pr
8202769 Semiconductor device and manufacturing method thereof June 19, 2012
A space is provided under part of a semiconductor layer. Specifically, a structure in which an eaves portion (a projecting portion, an overhang portion) is formed in the semiconductor layer. The eaves portion is formed as follows: a stacked-layer structure in which a conductive layer,
8202760 Method for manufacturing an organic semiconductor element June 19, 2012
In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic i
8202743 Light emitting device and manufacturing method thereof June 19, 2012
The concentration of oxygen, which causes problems such as decreases in brightness and dark spots through degradation of electrode materials, is lowered in an organic light emitting element having a layer made from an organic compound between a cathode and an anode, and in a light emitti
8202238 Method for manufacturing thin film integrated circuit device, noncontact thin film integrated ci June 19, 2012
A thin film integrated circuit which is mass produced at low cost and a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a pluralit
8201329 Apparatus and method for manufacturing semiconductor device June 19, 2012
The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits,
8199300 Liquid crystal device utilizing electric field parallel to substrate June 12, 2012
A liquid crystal display device includes a first substrate, a second substrate opposed to the first substrate with a gap therebetween, a thin film transistor formed over the first substrate, an interlayer insulating film formed over the thin film transistor, a pixel electrode electricall
8199267 Liquid crystal display device June 12, 2012
The present invention has a pixel which includes a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected
8198936 Semiconductor device June 12, 2012
A semiconductor device is provided, which comprises a first demodulation circuit, a second demodulation circuit, a first bias circuit, a second bias circuit, a comparator, an analog buffer circuit, and a pulse detection circuit. An input portion of the pulse detection circuit is elec
8198683 Semiconductor device including transistors with silicided impurity regions June 12, 2012
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is pr
8198680 Semiconductor element, semiconductor device and methods for manufacturing thereof June 12, 2012
The present invention provides a method of manufacturing a semiconductor element having a miniaturized structure and a semiconductor device in which the semiconductor element having a miniaturized structure is integrated highly, by overcoming reduction of the yield caused by alignmen
8198666 Semiconductor device including a nonvolatile memory element having first, second and third insul June 12, 2012
A nonvolatile memory element which is provided with a floating gate electrode and a high withstand voltage transistor which is provided with a thick gate insulating film are formed over one substrate without increase in a driving voltage of the nonvolatile memory element. A stacked f
8198635 Light emitting device, method for manufacturing thereof and electronic appliance June 12, 2012
An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting devi
8198630 Semiconductor device and manufacturing method thereof June 12, 2012
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode, the source region and the drain region by using three photomasks in three photolitho
8198629 Photoelectric conversion device and method for manufacturing the same June 12, 2012
To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity
8198173 Method for manufacturing SOI substrate June 12, 2012
To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a
8198165 Method for manufacturing semiconductor device June 12, 2012
In a semiconductor device having a raised source and drain structure, in forming a raised region by etching, etching of an island-like semiconductor film which is an active layer is inhibited. In a method for manufacturing a semiconductor device, an insulating film is formed by oxidi

 
 
  Recently Added Patents
Sink
Microporous membranes and methods for producing and using such membranes
Synthesized interoperable communications
Method for improving the performance of browser-based, formula-driven parametric objects
Toy track intersection component
System and method for a driver circuit with a referenced control signal
PCSK9 antagonists
  Randomly Featured Patents
Preparation of bleached chemithermomechanical pulp
Process for checking the deterministic behavior of a packet switching network
Resonant cavity gas density sensor
Electromagnetic valve for pulsed molecular beam
Pacemaker housing
Method for affixing labels to soap bars and labeled soap bars produced thereby
Engine mounting system
Tilt-sensing apparatus and automatic posture control apparatus using same
Cam-lock fitting
Portable basin apparatus