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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
8242974 Three dimensional display unit and display method August 14, 2012
In a structure in which six active matrix regions 103 to 108 are integrated on one glass substrate, horizontal scanning control circuits 101 and 102 are commonly disposed for the respective active matrix regions 103 to 105 and 106 to 108. Then the horizontal scanning control circuits
8242971 Display device and method of driving the same August 14, 2012
In a multi-window display device, the following has been merely performed: before data for plural screens is inputted to a display, video signals themselves are subjected to signal processing, and the processed video signals are inputted to the display, whereby display is performed.
8242903 Wireless sensor device August 14, 2012
A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and sto
8242837 Analog circuit and semiconductor device August 14, 2012
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide sem
8242699 Light emitting device and production system of the same August 14, 2012
To provide a light emitting device without nonuniformity of luminance, a correcting circuit for correcting a video signal supplied to each pixel to a light emitting device. The correcting circuit is stored with data of a dispersion of a characteristic of a driving TFT among pixels and da
8242683 Electronic display including a light-emitting element and a color filter sandwiched between two August 14, 2012
It is an object of the invention to achieve weight saving and downsizing of an electronic apparatus, in particular a portable electronic apparatus while enlarging a display screen thereof. The invention provides an electronic apparatus using a light emitting device which includes a light
8242592 IC chip, antenna, and manufacturing method of the IC chip and the antenna August 14, 2012
An antenna used for an ID chip or the like is disclosed with planarized antenna unevenness and an IC chip having such the antenna with a flat surface is disclosed. Manufacturing an integrated circuit mounted with an antenna is facilitated. A laminated body formed by stacking a conductive
8242585 Semiconductor device and method for manufacturing the same August 14, 2012
The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can
8242563 Semiconductor device August 14, 2012
A semiconductor device includes a semiconductor layer overlapping with a gate electrode and having an impurity region outside a region which overlaps with the gate electrode; a first conductive layer which is provided on a side provided with the gate electrode of the semiconductor la
8242562 Film deposition apparatus August 14, 2012
An object is to provide a film deposition apparatus in which the amount of leakage from the outside of the chamber to the inside of the chamber is reduced. Even if leakage occurs from the outside of the chamber to the inside of the chamber, oxygen and nitrogen included in an atmosphere t
8242508 Method of manufacturing a semiconductor device August 14, 2012
A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel form
8242496 Semiconductor device and method for manufacturing the same August 14, 2012
An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for
8242494 Method for manufacturing thin film transistor using multi-tone mask August 14, 2012
An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device i
8242486 Semiconductor device with liquid repellant layer August 14, 2012
An object is to provide technology for manufacturing a higher-reliability memory device and a semiconductor device that is equipped with the memory device at low cost. A semiconductor device of the present invention has a first conductive layer, a first insulating layer that is provided
8242002 Method for manufacturing semiconductor device August 14, 2012
A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6.times.10.sup.-7/.degree. C. and less than or equal to 38.times.10.sup.-7/.degree. C. The heated layer including the semicond
8241997 Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxi August 14, 2012
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the
8241949 Method of manufacturing semiconductor device August 14, 2012
An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulati
8241948 Semiconductor device and manufacturing method of the same August 14, 2012
The manufacturing method of the present invention includes steps of selectively forming a photocatalyst material or a material including an amino group by discharging a composition including the photocatalyst material or the material including an amino group; immersing the photocatal
8240577 Semiconductor device August 14, 2012
An object of the present invention is to achieve a wireless chip with high reliability, a small chip area, and low power consumption, where voltage that is generated inside is prevented from excessively increasing also in a strong magnetic field such as in the case of approaching an
8240030 Method for manufacturing electronic device August 14, 2012
To provide a method for forming an opening with high accuracy in an insulating film obtained by curing a prepreg including a reinforcing material in a step of exposing a terminal portion sealed with the insulating film, with the use of a means other than laser beam irradiation. A pro
8238152 Memory device and manufacturing method the same August 7, 2012
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above
8237687 Display device and method for driving using variable frequency according to gray scale display m August 7, 2012
Write in of lower significant bits of a digital video signal to a memory is eliminated by a memory controller of a signal control circuit in a display device during a second display mode in which the number of gray scales is reduced, as compared to a first display mode. Further, read out
8237641 Light emitting device August 7, 2012
A display device in which characteristic change of an organic light emitting layer due to deterioration or temperature change can be detected to keep the constant luminance of a light emitting element is provided. A monitor region is provided in addition to a pixel portion for display. A
8237569 Product management system August 7, 2012
When a product attached with an ID tag is placed inside a package body, there is a risk that communication with an ID tag using a reader/writer is blocked. Then, it is difficult to manage products in a distribution process of products, which leads to lose convenience of ID tags. One
8237355 Display device with spacer structure August 7, 2012
It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partiti
8237349 Light-emitting device with antireflective film August 7, 2012
An object of the present invention is to provide an antireflective film having an anti-reflection function with which reflection of external light which is incident on the antireflective film can be further reduced and a high-visibility display device having such an antireflective film.
8237346 Field emission display with antireflective layer August 7, 2012
It is an object of the present invention to provide a PDP and an FED with excellent visibility and a high level of reliability that each have an antireflective function by which reflection of external light can be reduced. A plurality of adjacent pyramidal-shaped projections and an a
8237248 Semiconductor device August 7, 2012
An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or
8237186 Electro-optical device August 7, 2012
An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potential of a gate signal
8237179 Light emitting device August 7, 2012
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring l
8237176 Light emitting device August 7, 2012
The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, fill
8237167 Semiconductor device and manufacturing method thereof August 7, 2012
An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of
8237164 Semiconductor device including magnet August 7, 2012
(OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate
8237085 Beam homogenizer, laser irradiation apparatus, and laser irradiation method August 7, 2012
An effect of interference is eliminated and intensity of a laser beam is homogenized. The beam homogenizer 100 includes reflecting mirrors 103 and 104 which are provided so that reflecting surfaces thereof face each other. The laser beam LB propagates through a space between the refl
8236668 Method for manufacturing SOI substrate August 7, 2012
An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compr
8236635 Method for manufacturing semiconductor device August 7, 2012
In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through whi
8236633 Semiconductor device and method for manufacturing the same August 7, 2012
The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is
8236630 Manufacturing method of semiconductor device, semiconductor device, and electronic device August 7, 2012
An embrittlement layer is formed in a single crystal semiconductor substrate having a (110) plane as a main surface by irradiation of the main surface with ions, and an insulating layer is formed over the main surface of the single crystal semiconductor substrate. The insulating laye
8236629 Method for manufacturing thin film integrated circuit, and element substrate August 7, 2012
Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention
8236627 Manufacturing method of semiconductor device August 7, 2012
It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a th
8233203 Exposure method and method of manufacturing semiconductor device July 31, 2012
The exposure method includes the steps of: illuminating a hologram recording medium, in which a hologram with a first pattern has been recorded by illumination with a laser beam emitted from a first laser oscillator, with a laser beam emitted from a second laser oscillator; and deliv
8232982 Driving method of an electric circuit July 31, 2012
A variation in threshold may be suppressed by structuring an analog switch by a MOS transistor and forming a signal synchronized to a clock by making the clock which is a common signal in continuity or discontinuity. An object of the present invention is to reduce the variation in th
8232947 Liquid crystal display device July 31, 2012
To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals) in a pixel or a circuit, the direction of current flowing through the transistor is changed (inverted). That i
8232880 Semiconductor device July 31, 2012
The present invention provides a battery as a power supply for supplying power in the RFID, and another antenna for charging the battery, in addition to an antenna which transmits and receives individual information to and from outside as a means for supplying power to the battery.
8232621 Semiconductor device July 31, 2012
When letters are written with a ballpoint pen, pen pressure is greater than or equal to 10 MPa. The IC tag embedded in the paper base material is required to withstand such pen pressure. An integrated circuit including a functional circuit which transmits and receive, performs arithm
8232598 Display device and method for manufacturing the same July 31, 2012
To provide a display device which can realize high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, a
8232556 Semiconductor device July 31, 2012
An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a
8232555 Semiconductor device, and method for manufacturing thereof July 31, 2012
It is an object of the present invention to provide a device suitable for new usage by making use of a semiconductor device such as an RFID tag in terms of the capability to transmit and receive data without being contacted therewith, to decrease a burden on a user, and to improve co
8232181 Manufacturing method of semiconductor device July 31, 2012
A manufacturing method of a semiconductor device is provided, which includes a process in which a transistor is formed over a first substrate; a process in which a first insulating layer is formed over the transistor; a process in which a first conductive layer connected to a source
8231424 Light-emitting element, light-emitting device, electronic appliance, and method of manufacturing July 31, 2012
A light-emitting element is provided which has a light-emitting layer between a first electrode and a second electrode, where the light-emitting layer has a first layer and a second layer; the first layer contains a first organic compound and a third organic compound; the second laye

 
 
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