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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
8264430 Semiconductor device, display device, and electronic device September 11, 2012
A display device includes a load, a transistor for controlling a current value supplied to the load, a capacitor, a first wiring, a second wiring, and first to fourth switches. Variations in the current value caused by variations in the threshold voltage of the transistor can be suppress
8264254 Clocked inverter, NAND, NOR and shift register September 11, 2012
A threshold voltage of a transistor is fluctuated because of fluctuation in film thickness of a gate insulating film or in gate length and gate width caused by differences of used substrates or manufacturing steps. In order to solve the problem, according to the present invention, there
8263983 Wiring substrate and semiconductor device September 11, 2012
The present invention provides a thin wiring pattern such as wiring formed by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jettin
8263926 Photoelectric conversion device and manufacturing method thereof September 11, 2012
It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a t
8263476 Manufacturing method of SOI substrate September 11, 2012
A manufacturing method of an SOI substrate with high throughput. A semiconductor layer separated from a semiconductor substrate is transferred to a supporting substrate, thereby manufacturing an SOI substrate. First, the semiconductor substrate serving as a base of the semiconductor
8263421 Manufacturing method of semiconductor device September 11, 2012
An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an in
8261999 Semiconductor device September 11, 2012
A semiconductor device such as an RFID, which can easily generate a given stable potential, is provided. Circuits included in a semiconductor device are categorized depending on whether a given stable power source potential is necessary. A power source potential generated from a wire
8259048 Field sequential liquid crystal display device and driving method thereof, and head mounted disp September 4, 2012
A display with high resolution and reduced flicker of image. The driving method of this invention, or the field sequential driving method, divides one frame of image into a plurality of subframes, i.e., divides the period of one image frame into a plurality of subframe periods; displays
8258862 Demodulation circuit and RFID tag including the demodulation circuit September 4, 2012
An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an
8258847 Semiconductor device, electronic device having the same, and driving method of the same September 4, 2012
A digital circuit which can operate normally regardless of binary potentials of an input signal is provided. A semiconductor device comprising a correcting unit and one or a plurality of circuit elements, the correcting unit including a first capacitor, a second capacitor, a first sw
8258515 Contact structure and semiconductor device September 4, 2012
To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic
8258512 Semiconductor device and manufacturing method thereof September 4, 2012
An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According
8258030 Manufacturing method of semiconductor device September 4, 2012
The present invention provides a manufacturing method of a semiconductor device having a semiconductor nonvolatile memory element that is highly reliable and that can increase a variation of a threshold voltage. Further, the present invention provides a method for manufacturing a sem
8258025 Method for manufacturing microcrystalline semiconductor film and thin film transistor September 4, 2012
A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A depositi
8253911 Liquid crystal display device August 28, 2012
To improve viewing angle characteristics by varying voltage which is applied between liquid crystal elements. A liquid crystal display device in which one pixel is provided with three or more liquid crystal elements and the level of voltage which is applied is varied between the liquid
8253717 Control circuit of display device, and display device, and display device and electronic applian August 28, 2012
An object is to realize downsizing and cost reduction of a display device by efficiently using a physical region of a memory in a control circuit of the display device. A structure of a video data storage portion of the control circuit is that provided with a video data storage portion f
8253662 Display system and electrical appliance August 28, 2012
A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the informati
8253660 Display device and controlling method thereof August 28, 2012
A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor V.sub.ds had to be set high (V.sub.ds.gtoreq.V.sub.gs-V.sub.Th+a). This caused high heat
8253446 Semiconductor device and electronic apparatus using the same August 28, 2012
The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present
8253327 Light-emitting element, light-emitting device, and electronic device August 28, 2012
Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A li
8253252 Semiconductor device and manufacturing method thereof August 28, 2012
It is an object to provide an element structure of a semiconductor device for having a sufficient contact area between an electrode in contact with a source region or a drain region and the source region or the drain region, and a method for manufacturing the semiconductor device with th
8253179 Semiconductor device and manufacturing method of the same August 28, 2012
An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these
8253144 Semiconductor device and method for manufacturing the same August 28, 2012
As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer in
8253140 Display device having capacitor wiring August 28, 2012
To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to e
8253138 Thin film transistor and display device having the thin film transistor August 28, 2012
A thin film transistor includes a gate electrode, a gate insulating layer covering the gate electrode, a microcrystalline semiconductor layer over the gate insulating layer, an amorphous semiconductor layer over the microcrystalline semiconductor layer, source and drain regions over the
8253135 Semiconductor device, display device, and electronic appliance August 28, 2012
To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided betwee
8252669 Method for manufacturing microcrystalline semiconductor film by plasma CVD apparatus August 28, 2012
An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second
8252637 Semiconductor device and method of fabricating the same August 28, 2012
The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate elect
8252434 Light emitting device and electronic appliance using the same August 28, 2012
A light emitting device comprises a pair of electrodes and a mixed layer provided between the pair of electrodes. The mixed layer contains an organic compound which contains no nitrogen atoms, i.e., an organic compound which dose not have an arylamine skeleton, and a metal oxide. As
8248551 Semiconductor device including capacitor line parallel to source line August 21, 2012
A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film.
8248392 Light emitting device using light emitting element and driving method of light emitting element, August 21, 2012
It is an object of the present invention to provide a light-emitting device including a light-emitting element with smaller luminance degradation by contriving a driving means. In addition, it is an object of the present invention to provide a driving method for reducing luminance de
8248330 Light emitting device and driving method thereof August 21, 2012
A light emitting device which is able to suppress power consumption while a balance of white light is maintained is provided. According to the present invention, either the potential level of the Hi video signal or Lo video signal which is given to a gate electrode of a transistor, and
8247965 Light emitting display device and method for manufacturing the same August 21, 2012
An object of the invention is to provide a display device which can be manufactured with usability of a material improved and with a manufacturing step simplified and to provide a manufacturing technique thereof. One feature of a light emitting display device of the present invention
8247814 Active matrix display device including a metal oxide semiconductor film August 21, 2012
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, select
8247813 Display device and electronic device including the same August 21, 2012
One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide compon
8247812 Transistor, semiconductor device including the transistor, and manufacturing method of the trans August 21, 2012
An object is to suppress deterioration in electric characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in
8247802 Memory element and semiconductor device August 21, 2012
To provide a memory element, a memory device, and a semiconductor device, which can be easily manufactured at low cost; are nonvolatile and data-rewritable; and have preferable switching properties and low operating voltage. A memory element of the invention includes a first conducti
8247315 Plasma processing apparatus and method for manufacturing semiconductor device August 21, 2012
By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline
8247308 Method for manufacturing SOI substrate August 21, 2012
It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide f
8247307 Manufacturing method of substrate provided with semiconductor films August 21, 2012
A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single
8247276 Thin film transistor, method for manufacturing the same, and semiconductor device August 21, 2012
In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer
8247250 Method for manufacturing liquid crystal display device August 21, 2012
An object is to uniformly align liquid crystal molecules without requiring a step of forming an alignment film. A material for forming a self-assembled monolayer is dispersed in a liquid crystal material, and the mixture is interposed between a pair of substrates by a liquid crystal
8247246 Semiconductor device and manufacturing method thereof, delamination method, and transferring met August 21, 2012
A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a
8243873 Driver circuit, display device including the driver circuit, and electronic appliance including August 14, 2012
An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a f
8243863 Semiconductor device August 14, 2012
To provide a semiconductor device which can transmit/receive data to/from a reader/writer without interruption of operation by the reader/writer or the like. A semiconductor device capable of wireless communication includes an antenna circuit, a first demodulation signal generation c
8243233 Liquid-crystal electro-optical apparatus and method of manufacturing the same August 14, 2012
A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid
8243220 Display device August 14, 2012
It is an object to provide a highly reliable display device. It is a feature an IC is over a substrate and a material layer having the same height is thereover. An IC is provided on one side of the substrate, and a material layer having the same height as the IC is provided on at least
8242988 Device substrate, light emitting device and driving method of light emitting device August 14, 2012
A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the
8242986 Display device and method for driving the same August 14, 2012
A semiconductor device having a configuration hardly generating variations in the current value due to a deteriorated EL element is to be provided. A capacitance element is disposed between the gate and the source of a driving TFT, video signals are inputted to the gate electrode, an
8242979 Display device August 14, 2012
The invention provides a portable information terminal, such as a notebook PC, including light-emitting elements entirely having longer lives (a double-sided display panel having longer lives) and allowing lower power consumption with a double-sided display panel having a first scree

 
 
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