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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
8283862 Light emitting device and method for manufacturing the same October 9, 2012
An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an
8283859 Light emitting device October 9, 2012
It is an object of the present invention to prevent an insulating film from peeling in a section where the insulating film is adjacent to a sealing region. Over a first substrate 104, a pixel portion 100 provided with a light emitting element, a source driver 101, a gate driver 102,
8283855 Method for synthesis of anthracene derivative October 9, 2012
A method for synthesizing an anthracene derivative represented by a general formula (G1) is provided, in which a 9-arylanthracene derivative having an active site at a 10-position is subjected to coupling with a carbazole-3-yl-aryl derivative having an active site in an aryl group wi
8283788 Method of fabricating semiconductor device October 9, 2012
Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the un
8283679 Semiconductor device having light-emitting element and light-receiving element for transmitting October 9, 2012
The present invention provides a semiconductor device having an integrated circuit formed by a low cost glass substrate, which can respond to the increase of an amount of information, and which offers high performance at high speed. A semiconductor device comprises a plurality of gla
8283667 Thin film transistor October 9, 2012
A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous
8283662 Memory device October 9, 2012
A memory device without additional logic circuits, including a memory cell which cannot be accessed by a third party and which is always accessible when needed. One embodiment is a memory device including a first memory cell and a second memory cell, and the second memory cell includ
8283238 Layer transfer process for semiconductor device October 9, 2012
A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a se
8283216 Liquid crystal display device and method for manufacturing the same October 9, 2012
As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and
8283055 Material for light-emitting element, light-emitting element, light-emitting device, electronic d October 9, 2012
A material for a light-emitting element is represented by a general formula (G1). In the general formula (G1), Ar.sup.1 represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, Ar.sup.2, Ar.sup.3, and Ar.sup.4 each independently represent a substituted or uns
8278974 Divider circuit October 2, 2012
A divider circuit includes a shift register which generates 2X (X is a natural number greater than or equal to 2) pulse signals in accordance with a first clock signal or a second clock signal and outputs them, and a divided signal output circuit which generates a signal to be a third
8278740 Method for manufacturing semiconductor device, semiconductor device, and electronic appliance October 2, 2012
An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high pe
8278739 Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof October 2, 2012
A method for manufacturing is: forming an insulating film over a substrate; forming an amorphous semiconductor film over the insulating film; forming over the amorphous semiconductor film, a silicon nitride film in which a film thickness is equal to or more than 200 nm and equal to o
8278713 Display device and manufacturing method thereof October 2, 2012
To achieve enlargement and high definition of a display portion, a single crystal semiconductor film is used as a transistor in a pixel, and the following steps are included: bonding a plurality of single crystal semiconductor substrates to a base substrate; separating part of the pl
8278663 Paper including semiconductor device and manufacturing method thereof October 2, 2012
Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 .mu.m. A semiconductor device is provide
8278662 Thin film transistor, manufacturing method thereof, display device, and manufacturing method the October 2, 2012
Disclosed is a manufacturing method of a thin film transistor, which enables the formation of a thin film transistor by using only one photomask. The method includes: over a substrate sequentially forming a first insulating film, a first conductive film, a second insulating film, a s
8278660 Semiconductor device and method for manufacturing the same October 2, 2012
A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, i
8278657 Transistor, semiconductor device including the transistor, and manufacturing method of the trans October 2, 2012
To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact w
8278655 Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and October 2, 2012
Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting elemen
8278444 Organometal complex and light-emitting element using the same October 2, 2012
An organometallic complex according to the present invention comprises a structure represented by the following general formula (1). In the formula, R.sup.1 to R.sup.5 are any one selected from the group consisting of hydrogen, a halogen element, an acyl group, an alkyl group, an alk
8278195 Plasma CVD apparatus October 2, 2012
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased whil
8278187 Method for reprocessing semiconductor substrate by stepwise etching with at least two etching tr October 2, 2012
Disclosed is a method for reprocessing a semiconductor substrate which is by-produced in manufacturing a silicon-on-insulator substrate. The method includes: forming an embrittlement layer in a single crystal semiconductor substrate; bonding the single crystal semiconductor substrate
8278162 Method for manufacturing semiconductor device October 2, 2012
A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer.
8278160 Semiconductor device and method of manufacturing the same October 2, 2012
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low
8278135 Highly pure film formation method for light emitting device using gas from evaporated electrolum October 2, 2012
There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impur
8277902 Method for forming film and method for manufacturing light emitting device October 2, 2012
A method for forming a film in which throughput is improved and a desired pattern is obtained smoothly in stacking a plurality of material layers over a substrate and a method for manufacturing a light emitting device are provided. In advance, a material layer is formed selectively by a
8274814 Semiconductor device including storage device and method for driving the same September 25, 2012
A structure of a storage device which can operate memory elements utilizing silicide reaction using the same voltage value for writing and for reading, and a method for driving the same are proposed. The present invention relates to a storage device including a memory element and a c
8274632 Liquid crystal display device September 25, 2012
It is an object of the present invention to provide a method for manufacturing a thin phase difference film of a liquid crystal display easily so as not to prevent a liquid crystal from being driven so that cost for manufacturing a liquid crystal display is reduced. A liquid crystal
8274628 Liquid crystal display device September 25, 2012
In the present invention, it is an object to improve display quality by improving response speed of a liquid crystal element in a liquid crystal display device, in particular, response speed in the case of falling. In the present invention, it is characterized that a liquid crystal layer
8274456 Display device and driving method of the same, and electronic apparatus September 25, 2012
The brightness of a light emitting element varies when changes in ambient temperature or changes with time occur. In view of this, the invention provides a display device where the influence of variations in the current value of the light emitting element due to changes in ambient te
8274323 Semiconductor device September 25, 2012
A semiconductor device includes rectifying elements which are connected in series and has a rectifying function from a first input terminal portion to an output terminal portion; a first wiring and a second wiring, which are connected to a second input terminal portion; and a boostin
8274079 Semiconductor device comprising oxide semiconductor and method for manufacturing the same September 25, 2012
A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate
8273898 Oxadiazole derivative, light-emitting element, display device, lighting device, and electronic d September 25, 2012
Provided is a bipolar substance having high excitation energy, in particular, high triplet-excitation energy. An oxadiazole derivative represented by General Formula (G1) below is provided ##STR00001## In the formula, Ar represents a substituted or unsubstituted aryl group having 6
8273637 Method for manufacturing semiconductor device September 25, 2012
Suppression of generation of a stripe pattern (unevenness) when an SOI substrate is manufactured by a glass substrate and a single crystal semiconductor substrate bonded to each other. A single crystal semiconductor substrate is irradiated with ions so that a fragile region is formed
8273614 Semiconductor device and method of manufacturing the same September 25, 2012
To reduce variation among TFTs in manufacture of a semiconductor device including n-type thin film transistors and p-type thin film transistors. Further, another object of the present invention is to reduce the number of masks and manufacturing steps, and manufacturing time. A method of
8273613 Semiconductor device and method of manufacture thereof September 25, 2012
There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurit
8273611 Method for manufacturing semiconductor substrate September 25, 2012
A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal
8273583 Method of manufacturing a light emitting device and thin film forming apparatus September 25, 2012
A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a
8272575 Semiconductor device September 25, 2012
A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate ha
8269943 Liquid crystal display device and manufacturing method thereof September 18, 2012
In a method for manufacturing a liquid crystal display device in which a liquid crystal layer is formed by dropping liquid crystal by a dropping method, a surface of a sealant which is formed over a first substrate is cured by a first cure treatment before dropping the liquid crystal, an
8269225 Lighting device September 18, 2012
An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a thir
8269218 Display device September 18, 2012
One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor
8269136 Laser beam treatment device and semiconductor device September 18, 2012
A laser beam treatment device capable of solving problem in a conventional technology that any uniform laser anneal cannot be realized since use of a galvano mirror changes the angle of incidence of the laser beam to the substrate and the reflected light from a back side of a transmi
8268702 IC card and booking-account system using the IC card September 18, 2012
It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a p
8268701 Manufacturing of semiconductor device September 18, 2012
Instead of forming a semiconductor film by bonding a bond substrate (semiconductor substrate) to a base substrate (supporting substrate) and then separating or cleaving the bond substrate, a bond substrate is separated or cleaved at a plurality of positions to form a plurality of fir
8268654 Method for manufacturing LCD with reduced mask count September 18, 2012
The number of photomasks is reduced in a method for manufacturing a liquid crystal display device which operates in a fringe field switching mode, whereby a manufacturing process is simplified and manufacturing cost is reduced. A first transparent conductive film and a first metal fi
8268642 Method for removing electricity and method for manufacturing semiconductor device September 18, 2012
An object is to suppress a significant change in electrical characteristics of thin film transistors and a deviation thereof from the designed range due to static electricity, and to improve the yield in manufacturing semiconductor devices. In order to prevent a substrate from being
8264889 Memory device and semiconductor device September 11, 2012
A memory device has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic
8264874 Semiconductor device September 11, 2012
Objects of the present invention are to improve the manufacturing yield of semiconductor devices, reduce manufacturing cost of the semiconductor device, and reduce the circuit area of an integrated circuit included in the semiconductor device. A memory layer of a memory element and a
8264445 Pulse output circuit, shift register and display device September 11, 2012
A drive circuit of a display device, which comprise only single conductive TFTs and in which amplitude of an output signal is normal, is provided. A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node a rises. When the potential of the no

 
 
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