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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
8564193 Light-emitting element, light-emitting device, electronic appliance, and method of manufacturing October 22, 2013
A light-emitting element is provided which has a light-emitting layer between a first electrode and a second electrode, where the light-emitting layer has a first layer and a second layer; the first layer contains a first organic compound and a third organic compound; the second laye
8563979 Method for producing display device October 22, 2013
In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface o
8563976 Semiconductor device and manufacturing method thereof October 22, 2013
A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide
8563973 Semiconductor device October 22, 2013
A semiconductor device including a nonvolatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written to
8563438 Method for manufacturing semiconductor device October 22, 2013
A manufacturing method of a semiconductor device of which cost can be suppressed by using a nanoimprinting method is provided. In the invention, a gate insulating film, a conductive film, and a resist are formed in sequence over a semiconductor film and a resist is hardened while pre
8563397 Semiconductor device and manufacturing method thereof October 22, 2013
The present invention relates to a semiconductor device and its manufacturing method including the steps of: forming a first semiconductor element layer having a first wiring over a substrate; forming a second semiconductor element layer having a second wiring and fixed to a first st
8563333 Film formation apparatus and film formation method October 22, 2013
There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impur
8300201 Semiconductor device and a method of manufacturing the same October 30, 2012
A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs ha
8300168 Display device comprising an antioxidant film formed on a microcrystalline semiconductor film wh October 30, 2012
It is an object to provide a manufacturing method by which display devices can be manufactured in quantity without degrading the characteristics of thin film transistors. In a display device including a thin film transistor in which a microcrystalline semiconductor film, a gate insul
8300031 Semiconductor device comprising transistor having gate and drain connected through a current-vol October 30, 2012
When a signal inputted to a pixel is erased by setting potentials of a gate terminal and a source terminal of a driving transistor to be equal, a current slightly flows through the driving transistor in some cases, which leads to occur a display defect. The invention provides a display
8299553 Laser annealing method and device October 30, 2012
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing
8299467 Thin film transistor and fabrication method thereof October 30, 2012
A thin film transistor is provided with a high crystallized region in a channel formation region and a high resistance region between a source and a drain, and thus has a high electric effect mobility and a large on current. The thin film transistor includes an "impurity which suppresses
8298858 Semiconductor device and method for manufacturing the same October 30, 2012
An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or
8298687 Anthracene derivative, material for light emitting element, light emitting element, light emitti October 30, 2012
It is an object of the present invention to provide a novel material capable of realizing excellent color purity of blue, and a light emitting element and a light emitting device using the novel material. Further, it is an object of the present invention to provide which is highly re
8297518 Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, docu October 30, 2012
Although a product having such the IC chip has been diffused, information on the product may be capable of being perceived, abstracted, falsified, or the like by a third person with his external device during distribution of the product or after purchase of the product. Further, priv
8295104 Semiconductor device October 23, 2012
It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the i
8294640 Signal line driving circuit and light emitting device October 23, 2012
Dispersion occurs in the characteristics of the transistors. The invention is a signal line driving circuit having a first and a second current source circuits corresponding to each of a plurality of signal lines, a shift register, and a constant current source for video signal, in w
8294155 Thin film transistor, display device having thin film transistor, and method for manufacturing t October 23, 2012
A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate e
8294152 Electronic circuit including pixel electrode comprising conductive film October 23, 2012
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen
8294147 Semiconductor device and manufacturing method the same October 23, 2012
An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a chann
8293661 Semiconductor device and manufacturing method thereof October 23, 2012
One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a su
8293626 Method for manufacturing semiconductor device October 23, 2012
It is an object to provide a homogeneous semiconductor film in which variation in the size of crystal grains is reduced. Alternatively, it is an object to provide a homogeneous semiconductor film and to achieve cost reduction. By introducing a glass substrate over which an amorphous
8293595 Semiconductor device and method for manufacturing the same October 23, 2012
In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted
8293594 Method for manufacturing a display device having oxide semiconductor layer October 23, 2012
An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for
8293593 Method for manufacturing semiconductor device and method for manufacturing display device October 23, 2012
An object is to provide a method for manufacturing a highly-reliable semiconductor device with an improved material use efficiency and with a simplified manufacturing process. The method includes the steps of forming a conductive layer over a substrate, forming a light-transmitting l
8293552 Light-emitting device, liquid-crystal display device and method for manufacturing same October 23, 2012
The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of Cu, Au, Ag, Ni, Cr, Pd, Rh, S
8293457 Substrate having film pattern and manufacturing method of the same, manufacturing method of semi October 23, 2012
The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput a
8289753 Semiconductor device October 16, 2012
An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second ga
8289241 Display device October 16, 2012
A signal line driving circuit which includes a digital signal sampling circuit, a storage circuit, a time setting circuit and a constant current circuit, is fabricated of TFTs on an insulating substrate which is made of the same substance as that of a pixel portion substrate. Thus, in a
8289238 Semiconductor device October 16, 2012
A semiconductor device in which a transistor can supply an accurate current to a load (EL pixel and signal line) without being influenced by variations is provided. A voltage at each terminal of a transistor is adjusted by a feedback circuit using an amplifier circuit. A current Idat
8289164 Semiconductor device and manufacturing method thereof October 16, 2012
A semiconductor device typified by a wireless tag, which has improved mechanical strength, can be formed by a more simple process at a low cost and prevent radio waves from being shielded, and a manufacturing method of the semiconductor device. According to the invention, a wireless tag
8289052 Logic circuit and display device having the same October 16, 2012
It is an object to provide a logic circuit which can be operated even when unipolar transistors are used. A logic circuit includes a source follower circuit and a logic circuit an input portion of which is connected to an output portion of the source follower circuit and all transist
8288856 Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using s October 16, 2012
A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circui
8288831 Semiconductor device, method of manufacturing the same, and electronic device having the same October 16, 2012
A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are
8288807 Semiconductor device and electronic device using the same October 16, 2012
To provide a semiconductor device which can detect low illuminance. A photoelectric conversion element, a diode-connected first transistor, and a second transistor are included. A gate of the first transistor is electrically connected to a gate of the second transistor. One of a sour
8288773 Wireless chip and manufacturing method thereof October 16, 2012
It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film
8288249 Method for manufacturing SOI substrate October 16, 2012
Manufacturing cost of an SOI substrate is reduced. Yield of an SOI substrate is improved. A method for manufacturing an SOI substrate includes the steps of irradiating a single crystal semiconductor substrate with ions to form an embrittled region in the single crystal semiconductor
8288248 Method of manufacturing semiconductor device having island-like single crystal semiconductor lay October 16, 2012
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the
8288245 Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconducto October 16, 2012
An object of an embodiment of the disclosed invention is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semi
8288215 Semiconductor device and method for manufacturing the same October 16, 2012
A single crystal semiconductor substrate including an embrittlement layer is attached to a base substrate with an insulating layer interposed therebetween, and the single crystal semiconductor layer is separated at the embrittlement layer by heat treatment; accordingly, a single crystal
8288197 Method for manufacturing a semiconductor device including a memory device comprising an insulato October 16, 2012
It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality
8284625 Semiconductor device having memory blocks October 9, 2012
A semiconductor device capable of stabilizing power supply by suppressing power consumption as much as possible. The semiconductor device of the invention includes a central processing unit having a plurality of units and a control circuit, and an antenna. The control circuit includes a
8284579 Semiconductor device October 9, 2012
The adverse effect of noise a constant voltage receives in a semiconductor device capable of data communication through wireless communication is suppressed. Further, communication is performed normally with a constant voltage with less noise even in the case where the amount of rece
8284375 Liquid crystal display device and manufacturing method thereof October 9, 2012
As the screen size becomes larger, it is required to make the device achieve higher definition, higher open area ratio, and higher reliability. Further, requirements for improvements in productivity and cost minimization are also increased. In the present invention, a substrate is pa
8284218 Display device controlling luminance October 9, 2012
A display device in which the image quality is improved by control of the peak luminance. A plurality of instantaneous luminances are expressed by performing signal writing to each pixel plural times within one frame period. The gray level is expressed by controlling time integration
8284151 Semiconductor device October 9, 2012
There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source
8284142 Display device October 9, 2012
A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT
8284130 Display device October 9, 2012
The inventors found out that in the case of performing a low gray scale display in which a very small amount of current is supplied to a light emitting element, variations in threshold voltages of driving transistors become notable since the gate-source voltage is low. In view of this, t
8284128 Semiconductor device October 9, 2012
A semiconductor device is provided in which a transistor which supplies a current to a load (an EL pixel and a signal line) can supply an accurate current without being affected by a variation. A voltage of each terminal of a transistor is controlled by using a feedback circuit using an
8284127 Display device and method of driving the same October 9, 2012
A display is conducted by using a time gray-scale system, in which one frame period is divided into a plurality of sub-frame periods, and a voltage applied to an EL element of a pixel is varied on a sub-frame period basis. Because of this, a display device is provided in which the fl

 
 
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