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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
7969489 Defective pixel specifying method, defective pixel specifying system, image correcting method, a June 28, 2011
A defective pixel specifying method and a defective pixel specifying system for a semiconductor device having a defective pixel are provided. Also provided are an image correcting method and an image correcting system for making a defective pixel inconspicuous on the screen when a re
7969390 Display device and driving method thereof June 28, 2011
To solve the lack of program time, which is a problem of a display device including an EL element, and to provide a display device including a pixel circuit with a high aperture ratio and a driving method thereof. In a circuit including a driving transistor, a capacitor, a display elemen
7969363 Semiconductor device June 28, 2011
An object of the present invention is to prevent electrical characteristics of circuit elements from being adversely affected by copper diffusion in a semiconductor device having an integrated circuit and an antenna formed over the same substrate, which uses copper plating for the an
7969012 Semiconductor device and method for manufacturing the same June 28, 2011
A method for easily manufacturing a semiconductor device in which variation in thickness or disconnection of a source electrode or a drain electrode is prevented is proposed. A semiconductor device includes a semiconductor layer formed over an insulating substrate; a first insulating
7968886 Semiconductor integrated circuit and method of fabricating same June 28, 2011
A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially triangular regions are
7968885 Display device and manufacturing method thereof June 28, 2011
To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate ins
7968880 Thin film transistor and display device June 28, 2011
To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive la
7968879 Thin film transistor and display device including the same June 28, 2011
One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film transistor. Further, another object of the present invention is improvement of image quality of t
7968461 Method for forming wiring, method for manufacturing thin film transistor and droplet discharging June 28, 2011
It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. Therefore, the invention provides a method for narrowing (miniaturizing) the line width accordin
7968453 Method for manufacturing display device, and etching apparatus June 28, 2011
A tube is arranged to be in contact with an insulating layer in an opening formation region, and a treatment agent (etching gas or etchant) is discharged to the insulating layer through the tube. With the discharged treatment agent (etching gas or etchant), the insulating layer is se
7968427 Manufacturing method of semiconductor device June 28, 2011
The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yiel
7968386 Method for manufacturing thin film integrated circuit, and element substrate June 28, 2011
Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. In view of the above d
7968382 Method of manufacturing semiconductor device June 28, 2011
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500.degree. C.) process are separated from a substrate. After a molybdenum film is formed over a g
7965180 Wireless sensor device June 21, 2011
A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and sto
7965106 Semiconductor device and driving method thereof June 21, 2011
It is an object of the invention to provide a digital circuit which can operate normally regardless of binary potentials of an input signal. A semiconductor device having a correcting unit and a logic unit wherein the correcting unit includes a capacitor, first and second switches, w
7964891 Light-emitting element, display device, and electronic appliance June 21, 2011
The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the
7964879 Display device mounted with read function and electric appliance June 21, 2011
According to the present invention, a material having a light-shielding property is used for a bank layer surrounding the edge of a light-emitting element. Accordingly, light which is not reflected by an object to be read out can be prevented from entering an image pick-up element, a
7964876 Display device June 21, 2011
By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage natu
7964875 Semiconductor device and manufacturing method thereof June 21, 2011
The semiconductor device includes a thin film transistor; a first interlayer insulating film over the thin film transistor; a first electrode electrically connected to one of a source region and a drain region, over the first interlayer insulating film; a second electrode electricall
7964874 Semiconductor device having a protective circuit June 21, 2011
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or
7964452 Liquid crystal display device and method for manufacturing the same June 21, 2011
As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and
7964429 Method for manufacturing photoelectric conversion device June 21, 2011
A photoelectric conversion device which is excellent in photoelectric conversion characteristics is provided by effectively utilizing silicon semiconductor materials. The present invention relates to a method for manufacturing a photoelectric conversion device using a solar cell, in
7964423 Semiconductor device and method for manufacturing the same June 21, 2011
The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer over the insulati
7961525 Method for deleting data from NAND type nonvolatile memory June 14, 2011
To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for dele
7961515 Nonvolatile memory June 14, 2011
A highly-integrated nonvolatile memory. A memory cell array where plural memory cells are arranged in matrix in row and column directions, plural first and second word lines, and plural bit lines are included. Each of the plural memory cells includes a first memory transistor and a secon
7961160 Display device, a driving method of a display device, and a semiconductor integrated circuit inc June 14, 2011
A display device in which a current supplied to a light emitting element is corrected depending on a degradation level of the light emitting element and display variations due to the degradation of each light emitting element are suppressed. Further, according to the display device o
7961159 Signal line driver circuit, light emitting device and driving method thereof June 14, 2011
Variation occurs in transistor characteristics. The present invention relates to a signal line driver circuit comprising a plurality of current source circuits respectively corresponding to a plurality of wirings, characterized in that: the plurality of current source circuits each c
7961006 Semiconductor device and electronic apparatus having the same June 14, 2011
With an offset circuit including transistors of the same conductivity type, offset of an input signal is performed. Then, the input signal after the offset is supplied to a logic circuit including transistors of the same conductivity type as that of the offset circuit, thereby H and L
7960917 Light emitting device and electronic equipment using the same June 14, 2011
A light emitting device is provided which is capable of displaying in desired colors stably by controlling a change in luminance of OLED when an organic light emitting layer is degraded or there is a change in temperature of the surroundings. A reference value for the amount of curre
7960771 Semiconductor device comprising a switching element and memory element having an organic compoun June 14, 2011
A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced de
7960733 Electronics device, semiconductor device, and method for manufacturing the same June 14, 2011
It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device. In the invention,
7960566 Anthracene derivative and light-emitting devices, electronic devices, and lighting device using June 14, 2011
An anthracene derivative is disclosed, and a light-emitting element, a light-emitting device, an electronic device, and a lighting device using the anthracene derivatives are demonstrated. The structure of the anthracene derivative is described in detail in the specification. The use
7960296 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device June 14, 2011
A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a pro
7960262 Method for manufacturing semiconductor device by applying laser beam to single-crystal semicondu June 14, 2011
To provide a low-cost high performance semiconductor device and a method for manufacturing the semiconductor device, a separate single-crystal semiconductor layer having a first region and a non-single-crystal semiconductor layer having a second region are provided over a substrate.
7956978 Liquid-crystal display device having a particular conductive layer June 7, 2011
Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically conne
7956957 Display device June 7, 2011
An object is to provide a display device with high contrast ratio. Another object is to manufacture such a high-performance display device at low cost. In a display device having a display element interposed between a pair of light-transmitting substrates, a stack of polarizer-includ
7956362 Semiconductor device and wiring structure of triple-layer June 7, 2011
A multi-layered gate electrode of a crystalline TFT is constructed as a clad structure formed by deposition of a first gate electrode, a second gate electrode and a third gate electrode, to thereby to enhance the thermal resistance of the gate electrode. Additionally, an n-channel TFT
7956359 Contact structure and semiconductor device June 7, 2011
To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic
7956352 Memory element comprising an organic compound and an insulator June 7, 2011
On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the i
7955995 Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device a June 7, 2011
An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manuf
7955994 Method for manufacturing semiconductor device, semiconductor device, and electronic appliance June 7, 2011
An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high pe
7955975 Semiconductor element and display device using the same June 7, 2011
Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor, a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the ac
7955949 Manufacturing method of SOI substrate June 7, 2011
There is provided a method of manufacturing an SOI substrate which is practicable even when a supporting substrate having a low allowable temperature limit is used. A separation layer is formed in a region at a certain depth from a surface of a semiconductor substrate, and a first he
7955912 Method of manufacturing a semiconductor device June 7, 2011
Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching pro
7955907 Semiconductor device, television set, and method for manufacturing the same June 7, 2011
An object of the invention is to provide a method for manufacturing a substrate having a film pattern such as an insulating film, a semiconductor film, or a conductive film with an easy process, and further, a semiconductor device and a television set having a high throughput or a hi
7953310 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device May 31, 2011
The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention prov
7952651 Liquid crystal display device May 31, 2011
The present invention has a pixel which includes a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected
7952541 Method of driving a display device May 31, 2011
A driving method that does not allow a change in temperature of the surroundings to change the luminance of a light emitting element of a pixel is provided for a display device with less uneven display, higher gradation, and reduced power consumption. A time ratio gradation driving m
7952392 Logic circuit May 31, 2011
An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 each include a gate electrode, a gate insulatin
7952152 Semiconductor device and fabrication method thereof May 31, 2011
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabr

 
 
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