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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:


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Patent Number Title Of Patent Date Issued
7989273 Semiconductor substrate and manufacturing method of semiconductor device August 2, 2011
To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. Th
7989272 Composition of carbon nitride, thin film transistor with the composition of carbon nitride, disp August 2, 2011
A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a protective film, for example, a material of an object to be coated (goods) is required to satisfy with a condition in disagreement
7989234 Method for manufacturing thin film transistor and method for manufacturing display device August 2, 2011
An object is to provide a method for manufacturing a thin film transistor and a display device with reduced number of masks, in which adverse effects of optical current are suppressed. A manufacturing method comprises forming a stack including, from bottom to top, a light-blocking fi
7988057 Memory device and semiconductor device August 2, 2011
It is an object to provide a flexible semiconductor device bearing a memory device with a highly reliable storage function, where the memory device comprises a layer containing an organic compound. Specifically, the memory device has a memory element which comprises a layer including
7987498 Personal data management system and nonvolatile memory card July 26, 2011
It is an object to provide a personal data management system which overcomes a problem of data leakage and a nonvolatile memory card applied to the personal data management system. A personal data management system includes a personal data storage medium including a communication control
7987379 Semiconductor device July 26, 2011
The invention provides a semiconductor device that power is stabilized by suppressing power consumption as much as possible. The semiconductor device of the invention includes a logic portion and a memory portion each including a plurality of transistors, a detecting portion for dete
7986287 Display device and method of driving the same July 26, 2011
When a light-emitting element emits light for a long time, characteristics thereof change and current flowing therethrough is reduced even in the same voltage is applied. In particular, in a case of a display device with light-emitting element, there is a problem such that burn-in is
7986216 Semiconductor device July 26, 2011
In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to
7985974 Light-emitting element, light-emitting device, lighting device, and electronic device July 26, 2011
An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a
7985967 Organic thin film transistor and method of manufacturing the same, and semiconductor device havi July 26, 2011
There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material
7985677 Method of manufacturing semiconductor device July 26, 2011
One of methods of manufacturing a semiconductor device of the present invention is as follows: a first conductive layer is formed, a first insulating layer is formed over the first conductive layer, and a second insulating layer is formed over the first insulating layer; then, a first
7985664 Film formation apparatus, method for forming film, and method for manufacturing photoelectric co July 26, 2011
The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or be
7985635 Laser process July 26, 2011
A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less an
7985606 Method of manufacturing light emitting device July 26, 2011
A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosi
7985605 Light-emitting device and manufacturing method thereof July 26, 2011
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at least a pattern of the
7985604 Method of manufacturing photoelectric conversion device July 26, 2011
A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and
7982696 Semiconductor device, display device, and electronic device July 19, 2011
A pixel includes a load, a transistor which controls a current supplied to the load, a storage capacitor, and first to fourth switches. By inputting a potential in accordance with a video signal into the pixel after the threshold voltage of the transistor is held in the storage capac
7982267 Projector including display device July 19, 2011
To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to e
7982250 Semiconductor device July 19, 2011
A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. Each of the plurality of filed-effect transistors has a semiconductor layer wh
7982222 EL display device and electronic device July 19, 2011
An EL display device capable of producing a vivid multi-gradation color display, and an electronic device having the EL display device. An electric current supplied to an EL element is controlled by providing a resistor between a current control TFT and the EL element formed in a pix
7982220 Display device, method for manufacturing the same, and electronic device having the same July 19, 2011
In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel
7981766 Manufacturing method and manufacturing apparatus of semiconductor July 19, 2011
To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At le
7980198 Doping apparatus, doping method, and method for fabricating thin film transistor July 19, 2011
It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in
7978412 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device July 12, 2011
The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface in
7978399 Display device and method of fabricating the same July 12, 2011
A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer ar
7978277 Liquid crystal display device July 12, 2011
It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal el
7978274 Display device and electronic device July 12, 2011
An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootst
7978190 Electrooptical device July 12, 2011
In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other
7978158 Display device and driving method thereof July 12, 2011
In the case where variations of environmental temperature or variations with time occur depending on characteristics of a light-emitting element, variations are generated in luminance. In the invention, a display device for suppressing effects due to variations of a current value of a
7977865 Composite material, material for light-emitting element, light-emitting element, light-emitting July 12, 2011
The present invention provides a composite material for a light-emitting element including a high molecular compound having an arylamine skeleton and an inorganic compound showing an electron accepting property to the high molecular compound. The absorption spectrum of the composite
7977750 Semiconductor device and manufacturing method thereof July 12, 2011
The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency a
7977685 Light-emitting device July 12, 2011
A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting eleme
7977669 Semiconductor memory device having a liquid-repellent layer July 12, 2011
It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conduct
7977253 Manufacturing method of semiconductor device July 12, 2011
A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost can be reduced wi
7977222 Manufacturing method of semiconductor device July 12, 2011
Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After
7977206 Method for manufacturing SOI substrate using the heat treatment apparatus July 12, 2011
A heat treatment apparatus is disclosed, which enables suppression of a warp of a base substrate to which a plurality of single crystal semiconductor substrates are bonded. An example of the apparatus comprises a treatment chamber, a supporting base provided in the treatment chamber,
7977150 Method for manufacturing an organic semiconductor element July 12, 2011
In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic i
7975926 Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, docu July 12, 2011
Although a product having such the IC chip has been diffused, information on the product may be capable of being perceived, abstracted, falsified, or the like by a third person with his external device during distribution of the product or after purchase of the product. Further, priv
7974111 DC/DC converter and semiconductor device using DC/DC converter July 5, 2011
It is an object to provide a DC/DC converter that can stabilize power supply potential in use. It is another object to provide a semiconductor device in which circuit operation is stabilized. In addition to a power supply that supplies potential to be reference potential of boosting in a
7973670 Display device and method for inspecting the same July 5, 2011
An object is to provide a display device, in a part of which a monitor light emitting element is provided and in which an anode and a cathode of the monitor light emitting element are prevented from short-circuiting in an early stage and over time by using a circuit which corrects a volt
7973608 Phase locked loop, semiconductor device, and wireless tag July 5, 2011
An object is to provide a PLL having a wide operating range. Another object is to provide a semiconductor device or a wireless tag which has a wide operating range in a communication distance or temperature by incorporating such a PLL. The semiconductor device or the wireless tag inc
7973471 Light emitting device comprising transparent protrusion, first and second electrodes and organic July 5, 2011
There is provided a method for manufacturing a light emitting device in which no copy-in is caused in the case of a light emitting device having a glossy cathode. An uneven portion is formed on the surface of a cathode which is in contact with an organic layer in a pixel portion, and
7973410 Semiconductor device July 5, 2011
Since a power source voltage is generated from a communication signal in a wireless chip, there is a risk that a large amount of voltage be generated in the wireless chip to electrically destroy a circuit in the case of supplying a strong communication signal. Therefore, the present
7973313 Thin film integrated circuit device, IC label, container comprising the thin film integrated cir July 5, 2011
The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is t
7973312 Semiconductor device and method of fabricating the same July 5, 2011
A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrod
7972943 Manufacturing method of semiconductor device July 5, 2011
A cap film is formed over semiconductor films formed over an insulating substrate; the semiconductor films are irradiated with a laser beam which is capable of completely melting the semiconductor film in a film-thickness direction to completely melt the semiconductor film. By contro
7972935 Method for manufacturing semiconductor device July 5, 2011
When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor
7972910 Manufacturing method of integrated circuit device including thin film transistor July 5, 2011
It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper lay
7970232 Image analysis method, image analysis program, pixel evaluation system having the image analysis June 28, 2011
In the case where a digital camera is used for evaluating a display quality of an image display panel, moire is generated due to a shift of a pixel pitch between a pixel of a panel and a pixel of a digital camera, and thus, a great influence is given as measurement deviation. The pre
7970200 Pattern inspection method and apparatus June 28, 2011
A color image of an inspection object is taken by an imaging means capable of taking a color image to obtain color information of an RGB color space. A gray-scale image of a color component of the RGB color space or another color space is generated, and the inspection object is detec
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