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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
8580700 Method for manufacturing semiconductor device November 12, 2013
To provide a method for manufacturing a semiconductor device using a method in which a desired position is rapidly subjected to laser irradiation while switching laser irradiation patterns. With respect to an organic memory element having a structure in which an organic compound laye
8576978 Pulse signal output circuit and shift register November 5, 2013
An object of the present invention is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. In an embodiment of the pulse signal output circuit, a transistor has a source terminal or a drain terminal connected
8576636 Semiconductor device November 5, 2013
A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor,
8576620 Semiconductor device and driving method thereof November 5, 2013
A semiconductor device includes: a source line; a bit line; a word line; a memory cell connected to the bit line and the word line; a driver circuit which drives a plurality of second signal lines and a plurality of word lines so as to select the memory cell specified by an address s
8576363 Liquid crystal display device and electronic apparatus November 5, 2013
The present invention provides a liquid crystal display device including a liquid crystal layer disposed between a first substrate and a second substrate, a pixel electrode in a reflection region and a transmission region over the first substrate, a film for adjusting a cell gap in the
8576348 Reflective liquid crystal display panel and device using same November 5, 2013
There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence
8576347 Display device and manufacturing method thereof November 5, 2013
It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern havi
8576209 Display device November 5, 2013
To provide a display device including a flexible panel that can be handled without seriously damaging a driver circuit or a connecting portion between circuits. The display device includes a bent portion obtained by bending an element substrate. A circuit for driving the display devi
8576155 Source line driving circuit, active matrix type display device and method for driving the same November 5, 2013
If the frequency of a clock signal is increased, the pulse width of a sampling pulse is decreased, and the amount of time for a video signal to be written to a source line is inadequate. Sampling pulses (sam) rise sequentially in synchronization with the rise of a start pulse (SP). As
8576147 Display device and electronic device November 5, 2013
A display device suppresses the influence of variations of a current value supplied to a light emitting element caused by a temperature change. In particular, luminance variations caused by a temperature gradient in a pixel portion due to a heat generated from a source signal line dr
8575985 Storage element, storage device, and signal processing circuit November 5, 2013
A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage element, data stored in a first storage circuit corresponding to a nonvolatile memory can be held by a first capacitor provi
8575960 Semiconductor device November 5, 2013
A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit c
8575741 Method of manufacturing a semiconductor device November 5, 2013
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the
8575740 Semiconductor device November 5, 2013
An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit san
8575696 Semiconductor device, manufacturing method thereof, and display device November 5, 2013
A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resist
8575678 Semiconductor memory device with floating gate November 5, 2013
To provide a semiconductor memory device having a floating gate which operates with a short channel. A high-work-function compound semiconductor having a work function of greater than or equal to 5.5 eV, such as indium nitride or zinc nitride, is used for the floating gate. According
8575631 Lighting device November 5, 2013
For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large th
8575619 Semiconductor device and fabrication method thereof November 5, 2013
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achi
8575618 Electronic device, semiconductor device and manufacturing method thereof November 5, 2013
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, select
8575610 Semiconductor device and method for driving the same November 5, 2013
An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a to
8575608 Thin film transistor and manufacturing method thereof November 5, 2013
An embodiment is a thin film transistor which includes a gate electrode layer, a gate insulating layer provided so as to cover the gate electrode layer; a first semiconductor layer entirely overlapped with the gate electrode layer; a second semiconductor layer provided over and in co
8575604 Semiconductor memory device November 5, 2013
An object is to provide a semiconductor memory device which can be miniaturized and also secures a sufficient margin for the refresh period. A memory cell includes a reading transistor, a writing transistor, and a capacitor. In the above structure, the capacitor controls a potential
8574976 Semiconductor device and manufacturing method thereof November 5, 2013
A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold vo
8574768 Power storage device November 5, 2013
An embodiment of the present invention relates to a power storage device which includes a positive electrode having a positive-electrode current collector with a plurality of first projections, a first insulator provided over each of the plurality of first projections, and a positive
8570479 Liquid crystal electrooptical device October 29, 2013
To provide means for resolving a problem in which in steps of connecting a panel array substrate and a stick substrate, connection failure is enhanced and reliability is deteriorated by a positional shift caused in connecting operation and a positional shift caused by shrinkage of the
8570456 Semiconductor device, display device and electronic device equipped with the semiconductor devic October 29, 2013
The present invention provides a semiconductor device which can prevent a current from flowing into a display element at a signal writing operation, without increasing power consumption and without changing a potential of a power supply for supplying a current to a load in each row.
8570266 Display device and electronic apparatus using the same October 29, 2013
A display device with reduced power consumption, high definition, and a slim bezel. Both of a writing operation and an erasing operation are performed by one gate driver that is mainly constituted by a shift register for selecting a row and a control circuit for switching between a w
8570256 Device substrate, light emitting device and driving method of light emitting device October 29, 2013
A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the
8570151 Semiconductor device October 29, 2013
Provided is a semiconductor device, such as a RFID tag, which receives and transmits data wirelessly and generates electric power using carrier waves, where the semiconductor device is configured to generate a desired power supply voltage even when the power of the carrier waves is i
8570070 Logic circuit and semiconductor device October 29, 2013
In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which
8570065 Programmable LSI October 29, 2013
A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic pro
8569958 Light emitting device and production system of the same October 29, 2013
To provide a light emitting device without nonuniformity of luminance, a correcting circuit for correcting a video signal supplied to each pixel to a light emitting device. The correcting circuit is stored with data of a dispersion of a characteristic of a driving TFT among pixels and da
8569814 Laser annealing method and laser annealing device October 29, 2013
The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cyli
8569802 Semiconductor device and display device October 29, 2013
It is an object of the invention to provide a thin, lightweight, high performance, and low in cost semiconductor device and a display device by reducing an arrangement area required for a power supply wiring and a ground wiring of a functional circuit and decreasing a drop in power s
8569767 Electroluminescence display device October 29, 2013
Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter
8569754 Semiconductor device and manufacturing method thereof October 29, 2013
A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffe
8569753 Storage device comprising semiconductor elements October 29, 2013
The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells
8569742 Organic field-effect transistor and semiconductor device including the same October 29, 2013
It is an object to provide an electrode for an organic field-effect transistor having a semiconductor layer formed of an organic semiconductor material (in the present invention, referred to as an organic field-effect transistor), which can reduce the energy barrier at an interface w
8569486 Organometal complex and light-emitting element using the same October 29, 2013
An organometallic complex according to the present invention comprises a structure represented by the following general formula (1). In the formula, R.sup.1 to R.sup.5 are any one selected from the group consisting of hydrogen, a halogen element, an acyl group, an alkyl group, an alk
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness October 29, 2013
It is an object of the present invention to obtain a transistor with a high ON current including a silicide layer without increasing the number of steps. A semiconductor device comprising the transistor includes a first region in which a thickness is increased from an edge on a channel
8569120 Method for manufacturing thin film transistor October 29, 2013
An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed
8569119 Method for producing semiconductor device and display device October 29, 2013
A step of forming wiring using first solution ejection means for ejecting a conductive material, a step of forming a resist mask on the wiring using second solution ejection means, and a step of etching the wiring using an atmospheric-pressure plasma device having linear plasma gener
8569098 Method for manufacturing photoelectric conversion device October 29, 2013
A method for manufacturing a photoelectric conversion device including a first-conductivity-type crystalline semiconductor region, an intrinsic crystalline semiconductor region, and a second-conductivity-type semiconductor region that are stacked over an electrode is provided for a n
8564629 Liquid crystal display device and driving method thereof October 22, 2013
A liquid crystal display device capable of performing image signal writing and display with a field-sequential method in parallel, with a simple pixel configuration. In the liquid crystal display device, image signal writing to pixels in a row can be followed by image signal writing
8564625 Display device and method of driving thereof October 22, 2013
It is an object of the present invention to provide a display device and a method of driving the display device that can reduce pseudo contours while suppressing the number of sub-frames as much as possible. In the display device, where one frame is divided into a plurality of sub-frames
8564578 Semiconductor device October 22, 2013
A semiconductor device capable of displaying a still image with low consumption power is provided. In the semiconductor device incorporated with a semiconductor display device capable of displaying the still image, a memory portion is mounted on a substrate on which a pixel portion i
8564575 Electrooptical device and method of fabricating the same October 22, 2013
There is disclosed an electrooptical device capable of achieving a large area display by making full use of the size of the substrate. An active matrix substrate acts as a driver portion for the reflection-type electrooptical device. A pixel matrix circuit and logic circuitry are for
8564529 Method for driving liquid crystal display device October 22, 2013
Image quality of a field-sequential liquid crystal display device is improved by increasing the frequency of input of an image signal. Among pixels arranged in matrix, image signals are concurrently supplied to pixels provided in a plurality of rows. Thus, the frequency of input of a
8564331 Semiconductor device October 22, 2013
A semiconductor device in which an input terminal is electrically connected to a first terminal of a first transmission gate; a second terminal of the first transmission gate is electrically connected to a first terminal of a first inverter and a second terminal of a functional circu
8564329 Semiconductor device and driving method thereof October 22, 2013
It is an object of the invention to provide a digital circuit which can operate normally regardless of binary potentials of an input signal. A semiconductor device having a correcting unit and a logic unit wherein the correcting unit includes a capacitor, first and second switches, w

 
 
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