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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:


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Patent Number Title Of Patent Date Issued
8017951 Semiconductor device including a conductive film having a tapered shape September 13, 2011
TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first
8017946 Thin film transistor having microcrystalline semiconductor layer and amorphous semiconductor lay September 13, 2011
The present invention relates to a semiconductor device including a thin film transistor comprising a microcrystalline semiconductor which forms a channel formation region and includes an acceptor impurity element, and to a manufacturing method thereof. A gate electrode, a gate insulatin
8017944 Electronic device with light emission for a display September 13, 2011
There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode (113) is disposed on another layer different
8017508 Method for manufacturing semiconductor device September 13, 2011
A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6.times.10.sup.-7/.degree. C. and less than or equal to 38.times.10.sup.-7/.degree. C. The heated layer including the semicond
8017506 Semiconductor device and method for forming the same September 13, 2011
A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate cont
8017456 Semiconductor device and manufacturing method thereof September 13, 2011
The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source
8017455 Semiconductor device and method for manufacturing the same September 13, 2011
An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device
8017429 Method for manufacturing photoelectric conversion device September 13, 2011
The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to for
8017422 Method for forming pattern, method for manufacturing light emitting device, and light emitting d September 13, 2011
Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be
8017252 Light emitting device and electronic appliance using the same September 13, 2011
A light emitting device comprises a pair of electrodes and a mixed layer provided between the pair of electrodes. The mixed layer contains an organic compound which contains no nitrogen atoms, i.e., an organic compound which dose not have an arylamine skeleton, and a metal oxide. As
8017186 Film forming method, discharging droplet method and droplet discharging device September 13, 2011
The present invention provides film forming method and a droplet discharge method for removing bubbles in a pressurizing chamber to prevent defective discharge without disposing a large amount of materials in a droplet discharging device. Before a material is discharged in the drople
8013972 Display device and method of fabricating the same September 6, 2011
A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length
8013809 Display device and driving method of the same, and electronic apparatus September 6, 2011
The brightness of a light emitting element varies when changes in ambient temperature or changes with time occur. In view of this, the invention provides a display device where the influence of variations in the current value of the light emitting element due to changes in ambient te
8013665 Semiconductor device September 6, 2011
To provide a semiconductor device of which a manufacturing process is simplified and which has a boosting circuit in which the area of a capacitor element is reduced. The present invention includes a plurality of rectifying elements which is connected in series and has a rectifying f
8013346 Light emitting device and method of manufacturing the same September 6, 2011
There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel
8013338 Display device and electronic device having the display device, and method for manufacturing the September 6, 2011
To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating fil
8013335 Semiconductor apparatus and fabrication method of the same September 6, 2011
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liqu
8012854 Semiconductor device and manufacturing method thereof September 6, 2011
It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an ob
8012841 Laser annealing method and laser annealing device September 6, 2011
The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cyli
8012812 Semiconductor device and method for manufacturing the same September 6, 2011
A separation layer is formed over a substrate, an insulating film 107 is formed over the separation layer, a bottom gate insulating film 103 is formed over the insulating film 107, an amorphous semiconductor film is formed over the bottom gate insulating film 103, the amorphous semic
8012782 Method for producing display device September 6, 2011
In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface o
8012529 Light emitting element and manufacturing method thereof September 6, 2011
According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole
8010045 Semiconductor device August 30, 2011
A semiconductor device having an antenna, an asynchronous counter, and a circuit is provided. The antenna converts a carrier wave into an electrical signal. The asynchronous counter has a plurality of flip-flop circuits, each of which has a plurality of thin film transistors. Alterna
8009145 Display device and an electronic apparatus using the same August 30, 2011
In a conventional display device comprising a sub-display, the display device is increased in thickness and in the number of components as the number of displays is increased. In the present invention, a dual emission display device is used so that either surface of a display is used
8009050 Wireless system, semiconductor device, and communication device August 30, 2011
A highly reliable and inexpensive wireless system, which includes a communication device and a semiconductor device having a plurality of functional circuits with the same function, is provided. The semiconductor device transmits the processing results of the functional circuits to t
8008737 Semiconductor device August 30, 2011
A micromachine includes a microstructure and a semiconductor element formed over one insulating substrate. The micromachine includes including a movable layer containing polycrystalline silicon and a space below or above the layer. Such polycrystalline silicon is formed on an insulating
8008735 Micromachine device with a spatial portion formed within August 30, 2011
A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or lase
8008693 Semiconductor thin film and method of manufacturing the same and semiconductor device and method August 30, 2011
A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the
8008670 Light emitting device August 30, 2011
An object is to provide a light emitting element using an inorganic compound as a light emitting material, which has ever-higher luminous efficiency and can be driven with low voltage. The chance of excitation of light emitting centers (atoms) in a light emitting layer is increased t
8008666 Semiconductor display device August 30, 2011
It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture,
8008489 Quinoxaline derivative, and light-emitting element, light-emitting device, electronic device usi August 30, 2011
It is an object to provide a novel bipolar organic compound. In particular, it is an object to provide a bipolar organic compound excellent in thermal stability. Further, it is another object to provide a bipolar organic compound which is electrochemically stable. A quinoxaline deriv
8008169 Method for manufacturing photoelectric conversion device August 30, 2011
A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are
8008140 Method for manufacturing semiconductor device including hat-shaped electrode August 30, 2011
It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multil
8006217 Method for manufacturing semiconductor device August 23, 2011
To reduce current consumption in a frequency-division circuit, particularly in a multistage frequency-division circuit, in a multistage frequency-division circuit, an inputted signal has a higher frequency in a preceding stage, and an inputted signal has a lower frequency in a follow
8004513 Semiconductor integrated circuit and method of driving the same August 23, 2011
A transistor causes fluctuation in the threshold and mobility due to the factor such as fluctuation of the gate length, the gate width, and the gate insulating film thickness generated by the difference of the manufacturing steps and the substrate to be used. As a result, there is ca
8004510 Control circuit of display device, and display device, and display device and electronic applian August 23, 2011
An object is to realize downsizing and cost reduction of a display device by efficiently using a physical region of a memory in a control circuit of the display device. A structure of a video data storage portion of the control circuit is that provided with a video data storage portion f
8004483 Display device August 23, 2011
Display bright in contrast can be obtained without discrination and flicker in the display device of the direct vision type whose pixel pitches are short to 20 .mu.m or less. A liquid crystal panel is driven through the frame inverse driving method, and the vertical frame frequency i
8004481 Display device and electronic device August 23, 2011
It is an object of the present invention to provide a display device in which a reverse current sufficient enough to insulate a short-circuited point flows and a transistor using amorphous silicon is used is applied. The display device includes a switching transistor that controls an inp
8004334 Data latch circuit and electronic device August 23, 2011
The data latch circuit of the invention includes a means for short-circuiting an input terminal and an output terminal of an inverter and by connecting the input terminal to one electrode of a capacitor and sampling a data signal or a reference potential to the other electrode of the
8004200 Element substrate and light emitting device August 23, 2011
A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and
8003977 Light emitting device having a light emitting laminated body comprising an organic compound August 23, 2011
It is an object of the present invention to provide a light emitting element with improved luminous efficiency, a reduced drive voltage, and improved degree of deterioration with respect to driving time. According to a light emitting element including a first electrode; a second elec
8003958 Apparatus and method for doping August 23, 2011
There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear
8003499 Laser irradiating device, laser irradiating method and manufacturing method of semiconductor dev August 23, 2011
An object of the present invention is to provide a method and a device for constantly setting the energy distribution of a laser beam on an irradiating face, and uniformly irradiating the laser beam to the entire irradiating face. Further, another object of the present invention is to
8003483 Method for manufacturing SOI substrate August 23, 2011
Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding laye
8003449 Method of manufacturing a semiconductor device having a reverse staggered thin film transistor August 23, 2011
A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patte
8003420 Display device provided with semiconductor element and manufacturing method thereof, and electro August 23, 2011
According to one feature of the invention, a region of an insulating film surface at least overlapped with a part of a gate electrode or wiring is coated with an organic agent; a fluid in which conductive fine particles are dispersed in an organic solvent is discharged by a droplet d
8003230 Electroluminescent element August 23, 2011
An electroluminescent element includes host materials and guest materials in a part of an electroluminescent layer. Device characteristics (luminous efficiency, luminous characteristics, or the like) of the electroluminescent element is improved by using host materials and guest mate
8000016 Laser irradiation apparatus and manufacturing method of semiconductor device August 16, 2011
A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams form
7999892 Liquid crystal display device August 16, 2011
It is an object of the present invention to provide a liquid crystal display device which has a wide viewing angle and less color-shift depending on an angle at which a display screen is seen and can display an image favorably recognized both outdoors in sunlight and dark indoors (or
7999800 Display device for partial display August 16, 2011
In order to achieve lower power consumption, a technique of performing display (partial display) by utilizing only a part of a display area is used. For example, a display area is divided, a plurality of driver circuits for driving the divided display areas independently are provided
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