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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:


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Patent Number Title Of Patent Date Issued
8048473 Method for manufacturing display device November 1, 2011
When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second
8048251 Method of manufacturing optical film November 1, 2011
To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first
8047889 Block set and managing method thereof November 1, 2011
A block set is provided, which comprises at least two blocks, and a container box for storing the two blocks. Each of the two blocks includes a wireless chip. The wireless chip has a memory which stores an identification number. The container box includes a reader for obtaining infor
8047442 Semiconductor device November 1, 2011
A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate ha
8045369 Semiconductor device and driving method of the same October 25, 2011
The invention provides a semiconductor device including a memory of a simple structure to provide an inexpensive semiconductor device and a driving method thereof. The semiconductor device of the invention includes a phase change memory including a memory cell array having a pluralit
8045271 Laser irradiation method and laser irradiation apparatus October 25, 2011
The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser be
8045184 Making method of sample for evaluation of laser irradiation position and making apparatus thereo October 25, 2011
A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradia
8045125 Liquid crystal display device having a gap retaining member made of resin formed directly over t October 25, 2011
In an active matrix semiconductor display device in which pixel TFTs and driver circuit TFT are formed on the same substrate in an integral manner, the cell gap is controlled by gap retaining members that are disposed between a pixel area and driver circuit areas. This makes it possi
8045120 Liquid crystal panel and equipment comprising said liquid crystal panel October 25, 2011
Non-uniformity of a cell gap of a liquid crystal panel is suppressed from affecting display adversely. Concentric interference fringes are unavoidably formed in a liquid crystal cell in which liquid crystal is sealed and the cell gap is maintained by a sealing member without using sc
8044949 Light emitting device and electronic apparatus for displaying images October 25, 2011
To solve degradation with time of a light emitting element by a new method. When the potential of an electrode of a monitor pixel is sampled and fed back to a light emitting pixel, degradation with time of a light emitting element can be corrected. In addition, when a writing period is
8044946 Semiconductor device October 25, 2011
The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a
8044906 Semiconductor device, and display device and electronic device utilizing the same October 25, 2011
A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate
8044905 TFT arrangement for display device October 25, 2011
A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is ch
8044813 Radio field intensity measurement device, and radio field intensity detector and game console us October 25, 2011
The present invention provides a radio field intensity measurement device having a display portion with improved visibility, in the case of measuring a weak radiowave from a long distance. In the radio field intensity measurement device, a battery is provided as a power source for po
8044800 Semiconductor device October 25, 2011
A semiconductor device with a built-in battery whose residual amount of the electrical energy can be detected accurately. The semiconductor device has a battery, a demodulation circuit, a control circuit which generates a signal having information about the residual amount of the ele
8044598 Light-emitting device October 25, 2011
The amplitude of a potential of a signal line is decreased and a scan line driver circuit is prevented from being excessively loaded. A light-emitting device includes a light-emitting element; a first power supply line having a first potential; a second power supply line having a sec
8044580 Light emitting device and manufacturing method of the same October 25, 2011
A light emitting device structure is provided so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, as well as a method of manufacturing this light emitting device. In the present invention, an upper end portion of
8044574 Display device and manufacturing method of display device October 25, 2011
It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each
8044499 Wiring substrate, manufacturing method thereof, semiconductor device, and manufacturing method t October 25, 2011
A wiring substrate is provided, including an insulating resin layer which is provided on both surfaces of a sheet-like fibrous body and with which the sheet-like fibrous body is impregnated, and a through wiring provided in a region surrounded by the insulating resin layer. The through w
8044464 Semiconductor device October 25, 2011
An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor devi
8044411 Light emitting device October 25, 2011
The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, fill
8044407 Liquid crystal display device and electronic device provided with the same October 25, 2011
A liquid crystal display device provided with a thin film transistor with excellent electrical characteristics and reduced off current, for which increase in manufacturing costs can be suppressed while suppressing reduction in yield. A thin film transistor includes a gate electrode p
8044397 Semiconductor device having light emitting element, integrated circuit and adhesive layer October 25, 2011
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substra
8044393 Light emitting device and manufacturing method thereof October 25, 2011
A light emitting device is provided, which uses alternating current drive as a method of driving the light emitting device, and in which light emission is always obtained when voltages having different polarities are alternately applied, and a method of manufacturing the light emitting
8044372 Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor dev October 25, 2011
Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the
8044296 Photovoltaic device and method for manufacturing the same October 25, 2011
A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate
8043969 Method for manufacturing semiconductor device October 25, 2011
A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a li
8043950 Semiconductor device and manufacturing method thereof October 25, 2011
It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention
8043939 Method for manufacturing semiconductor wafer October 25, 2011
To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed
8043938 Method for manufacturing SOI substrate and SOI substrate October 25, 2011
A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other,
8043937 Method for manufacturing semiconductor substrate October 25, 2011
It is an object to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide. The method for manufacturing a semiconductor device includes the steps of performing carbonization treatment on a surface of a silicon substrate to form a silicon carbide
8043936 Method for manufacturing semiconductor device October 25, 2011
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material
8043935 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor devi October 25, 2011
An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substra
8043905 Semiconductor device and method of fabricating the same October 25, 2011
To provide a thin film transistor having a high field effect mobility and a small variation in characteristics thereof, a second amorphous semiconductor layer patterned in a predetermined shape is formed on a first crystalline semiconductor layer 17 for constituting source and drain
8043902 Semiconductor device and manufacturing method thereof October 25, 2011
The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern o
8043901 Method for manufacturing display device October 25, 2011
The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formati
8042984 Illumination apparatus October 25, 2011
A point light source is converted into a plane light source having a satisfactory uniformity. The point light source is converted into a line light source by means of a linear light guiding plate, and further into the plane light source by means of a plane-like light guiding plate. L
8041309 Semiconductor device October 18, 2011
In a multi-core semiconductor device, a data bus between CPUs or the like consumes a larger amount of power. By provision of a plurality of CPUs which transmit data by a backscattering method of a wireless signal, a router circuit which mediates data transmission and reception between th
8040469 Display device, method for manufacturing the same and apparatus for manufacturing the same October 18, 2011
The present inventions provides a method for manufacturing a film-type display device efficiently, and a method for manufacturing a large-size film-type display device, and an apparatus for manufacturing the film-type display device. An apparatus for manufacturing a film-type display
8040456 Liquid crystal display device and manufacturing method of liquid crystal display device October 18, 2011
To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal displ
8040450 Liquid crystal electro-optic device October 18, 2011
In a horizontal electric field drive type liquid crystal electro-optic device wherein a liquid crystal material is driven by controlling the strength of an electric field parallel to a substrate, noncontinuity of the electric field strength around each pixel electrode is minimized and
8039853 Light emitting device October 18, 2011
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring l
8039842 Thin film transistor and display device including thin film transistor October 18, 2011
A thin film transistor with favorable electric characteristics is provided, which includes a gate electrode layer; a first insulating layer covering the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions, which are provided with a distance
8039782 Optical sensor device and electronic apparatus with an amplifier circuit and dual level shift ci October 18, 2011
In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical se
8039353 Semiconductor device and manufacturing method of semiconductor device October 18, 2011
The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating
8039288 Semiconductor device and manufacturing method thereof October 18, 2011
A high performance electric device which uses an adhesive layer over a substrate. A color filter is over a substrate, and an adhesive layer is also located over the substrate and color film. An insulating layer is over the adhesive layer, and thin film transistors cover the insulating
8039122 Anthracene derivative, material for light emitting element, light emitting element, light emitti October 18, 2011
It is an object of the present invention to provide a novel material capable of realizing excellent color purity of blue, and a light emitting element and a light emitting device using the novel material. Further, it is an object of the present invention to provide which is highly re
8036604 Transmitting and receiving circuit and semiconductor device including the same October 11, 2011
An object is to provide a circuit configuration with which the number of transistors can be reduced and power conversion efficiency can be prevented from being reduced, in a transmitting and receiving circuit. The transmitting and receiving circuit includes a voltage doubler rectifie
8035877 Laser treatment apparatus and method of manufacturing semiconductor device October 11, 2011
A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter
8035781 Liquid crystal display device October 11, 2011
With an object of providing a transflective type liquid crystal display device having a transparent electrode of an uneven structure formed without particularly increasing steps, in fabricating the transflective type liquid crystal display device, a amorphous transparent conductive f
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