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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:


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Patent Number Title Of Patent Date Issued
8053837 Semiconductor device November 8, 2011
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the
8053816 Semiconductor device November 8, 2011
It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it
8053781 Semiconductor device having thin film transistor November 8, 2011
The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous
8053780 Semiconductor element, method for manufacturing the same, liquid crystal display device, and met November 8, 2011
In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number
8053778 Semiconductor device and a method for manufacturing the same November 8, 2011
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trappin
8053717 Photoelectric conversion device having a reference voltage generation circuit with a resistor an November 8, 2011
The photoelectric conversion device includes a photoelectric conversion circuit for outputting photocurrent generated in a photoelectric conversion element as output voltage subjected to logarithmic compression by a first diode element, a reference voltage generation circuit for outp
8053339 Semiconductor device and manufacturing method thereof November 8, 2011
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered
8053338 Plasma CVD apparatus November 8, 2011
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased whil
8053333 Manufacturing method of semiconductor device November 8, 2011
To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a subst
8053332 Method for manufacturing SOI substrate and semiconductor device November 8, 2011
To provide a method for manufacturing a semiconductor substrate provided with a single crystal semiconductor layer which can be used practically even when a substrate with a low upper temperature limit, such as a glass substrate, is used. An oxide film is formed on a single crystal s
8053294 Manufacturing method of thin film transistor by controlling generation of crystal nuclei of micr November 8, 2011
It is an object to control quality of a microcrystalline semiconductor film or a semiconductor film including crystal grains so that operation characteristics of a semiconductor element typified by a TFT can be improved. It is another object to improve characteristics of a semiconduc
8053290 Manufacturing method of semiconductor device November 8, 2011
Ni silicide is formed through simple steps. After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film ov
8053289 Manufacturing method for thin film transistor on insulator November 8, 2011
In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity
8053269 Method of forming display device that includes removing mask to form opening in insulating film November 8, 2011
To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask
8053253 Method for manufacturing semiconductor device November 8, 2011
An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing
8053174 Manufacturing method for wiring November 8, 2011
In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate
8053171 Substrate having film pattern and manufacturing method of the same, manufacturing method of semi November 8, 2011
The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput a
8053145 Method for manufacturing holographic recording medium and method for manufacturing semiconductor November 8, 2011
To provide a method for manufacturing a holographic recording medium and a method for manufacturing a semiconductor device, by which effects of distortion or irregularities of the surface of an exposure object can be reduced. The method includes the steps of: splitting a laser beam emitt
8052059 Semiconductor device November 8, 2011
An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD
8050070 Rectifier circuit, power supply circuit, and semiconductor device November 1, 2011
It is an object of the present invention to provide a rectifier circuit that can suppress deterioration or dielectric breakdown of a semiconductor element due to excessive current. A rectifier circuit of the present invention includes at least a first capacitor, a second capacitor, a
8049851 Method for manufacturing a liquid crystal display device having a second orientation film surrou November 1, 2011
A liquid crystal dripping method has a problem in that an uncured sealant increases in width at the time of attaching a pair of substrates and thus a liquid crystal material enters the sealant and unevenness occurs in the inner periphery of the sealant. A region in which reduced is the s
8049669 Semiconductor device comprising circuit between first and second conducting wires November 1, 2011
It is an object of the present invention to provide an ID chip in which gain of an antenna is increased and the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. A semiconductor device typified by an ID chip of the present invention inc
8049624 Wireless communication method November 1, 2011
To provide a wireless communication method in the case where communication of a wireless signal from a communication device to a semiconductor device can be ensured, communication of a wireless signal can be ensured without using a repeater even when communication of a wireless signa
8049538 Semiconductor device November 1, 2011
A shift register capable of supplying only a necessary clock signal to a necessary unit register with simple constitution. A semiconductor device is provided with a shift register in which a plurality of stages of unit registers is connected, in which the unit register comprises a flip-f
8049421 Light emitting device including plural barriers November 1, 2011
When a light emitting element is actuated to allow the light emission, the generation of Joule heat occurs, leading to the decomposition or crystallization of an organic compound to cause the degradation of the light emitting device. Therefore, a light emitting element of the present
8049419 Light-emitting device with suppressed influence of voltage drop November 1, 2011
A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings)
8049418 Light emitting device comprising triplet compound in electroluminescent layer November 1, 2011
The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet
8049292 Semiconductor device and method for manufacturing semiconductor device November 1, 2011
A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each
8049275 Semiconductor device November 1, 2011
There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low conce
8049266 Nonvolatile semiconductor memory device and manufacturing method thereof November 1, 2011
A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided ove
8049253 Semiconductor device and method for manufacturing the same November 1, 2011
A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface,
8049225 Semiconductor device and method for manufacturing the same November 1, 2011
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The
8049221 Liquid crystal display device November 1, 2011
An objective is simplification of a manufacturing method of a liquid crystal display device or the like. In a manufacturing method of a thin film transistor, a stack in which a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second
8049219 Integrated circuit, semiconductor device comprising the same, electronic device having the same, November 1, 2011
An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a plurality of memory cells each having a thin film transistor are disposed. The thin film transis
8049215 Thin film transistor November 1, 2011
A thin film transistor has a gate electrode; a gate insulating layer provided so as to cover the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions which is provided so that at least part of each of them overlaps the gate electrode layer an
8049208 Organic semiconductor device having composite electrode November 1, 2011
It is an object of the present invention, in a case of using a conductive material as part of an electrode for an organic transistor, to provide an organic transistor having a structure whose characteristics are not controlled by the work function of the conductive material. Moreover, it
8049206 Organic field effect transistor and semiconductor device November 1, 2011
It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer co
8049157 Semiconductor device November 1, 2011
The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a
8049103 Semiconductor device and manufacturing method thereof November 1, 2011
A semiconductor device is provided, which comprises a first electrode, crystalline semiconductor particles, a semiconductor layer, and a second electrode. The crystalline semiconductor particles of which adjacent particles are fusion-bonded, the crystalline semiconductor particles have
8048777 Method for manufacturing semiconductor device November 1, 2011
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material
8048773 Method for manufacturing SOI substrate November 1, 2011
A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation
8048771 Method for manufacturing semiconductor device, semiconductor device and electronic appliance November 1, 2011
A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display
8048770 Method for manufacturing semiconductor device November 1, 2011
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material
8048754 Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor November 1, 2011
An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single cryst
8048749 Method for manufacturing semiconductor device November 1, 2011
A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conduc
8048729 Method for manufacturing semiconductor device November 1, 2011
A highly responsive semiconductor device in which the subthreshold swing (S value) is small and reduction in on-current is suppressed is manufactured. A semiconductor layer in which a thickness of a source region or a drain region is larger than that of a channel formation region is
8048728 Display device, method for manufacturing display device, and SOI substrate November 1, 2011
A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface,
8048697 Method for manufacturing an LCD device employing a reduced number of photomasks including bottom November 1, 2011
A manufacturing method of the present invention includes a process using a first multi-tone mask, in which a first conductive layer in which a transparent conductive layer and a metal layer are stacked over a substrate, a gate electrode formed of a first conductive layer, and a pixel
8048543 Light emitting element, light emitting device, and electronic device November 1, 2011
It is an object of the present invention to provide a functional layer for protecting a light emitting element from being deteriorated by a physical or chemical influence when the light emitting element is manufactured or driven, and to attain extension of lifetime of an element and
8048540 Organometallic complex, and light-emitting element, light-emitting device and electronic device November 1, 2011
An organometallic complex with high emission efficiency and an organic light-emitting element having the organometallic complex are described. The organometallic complex has a structure represented by the following general formula (G1'). ##STR00001##
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